FCX619
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FCX619 50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 50V Case: SOT89 IC = 3A high Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound
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Original
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FCX619
220mV
AEC-Q101
J-STD-020
FCX619
DS33067
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PDF
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2DB1188P
Abstract: P23Q
Text: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V Case: SOT89 IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A Case material: Molded Plastic, "Green" Molding Compound.
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Original
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2DB1188P/Q/R
800mV
2DD1766
AEC-Q101
J-STD-020
MIL-STD-202,
DS31144
2DB1188P
P23Q
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PDF
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Untitled
Abstract: No abstract text available
Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V Case: SOT89 IC = -1A Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound ICM = -1.5A Peak Pulse Current
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BCX51/
-500mV
BCX54,
AEC-Q101
DS35368
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PDF
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state
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ZXTP2008Z
ZX5T949Z
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PDF
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FCX690BTA
Abstract: SOT89 MARKING CODE .3B
Text: A Product Line of Diodes Incorporated Green FCX690B 45V NPN HIGH GAIN POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 45V Case: SOT89 IC = 2A high Continuous Collector Current Case material: molded plastic. “Green” molding compound.
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Original
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FCX690B
300mV
FCX790A
AEC-Q101
J-STD-020
MIL-STD-202,
FCX690B
DS33070
FCX690BTA
SOT89 MARKING CODE .3B
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PDF
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AM/mcl d01 94V0
Abstract: No abstract text available
Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V Case: SOT89 IC = -1A Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound ICM = -1.5A Peak Pulse Current
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Original
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BCX51/
-500mV
J-STD-020
BCX54,
MIL-STD-202
DS35368
AM/mcl d01 94V0
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PDF
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Untitled
Abstract: No abstract text available
Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP
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Original
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ZXTP19100CZ
-100V
-130mV
ZXTN19100CZ
ZXTP19100CZTA
D-81541
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PDF
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ZXTN19020DZ
Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Text: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor
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Original
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ZXTP19020DZ
-47mV
ZXTN19020DZ
D-81541
ZXTN19020DZ
ZXTP19020DZ
ZXTP19020DZTA
TS16949
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PDF
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Untitled
Abstract: No abstract text available
Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP
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Original
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ZXTP25020DZ
-65mV
ZXTN25020DZ
D-81541
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -40V Case: SOT89 IC = -5.5A High Continuous Current Case Material: Molded Plastic. “Green” Molding Compound.
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Original
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J-STD-020
-60mV
DS33419
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PDF
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MARKING KN2
Abstract: No abstract text available
Text: DXT651 60V NPN LOW VCE sat TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V Case: SOT89 IC = 3A high Continuous Current Case material: Molded Plastic. “Green” Molding Compound. Low saturation voltage VCE(sat) < 300mV @ 1A
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Original
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DXT651
300mV
DXT751
AEC-Q101
J-STD-020
MIL-STD-202,
DS31184
MARKING KN2
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PDF
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TS16949
Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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Original
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ZXTN25100DZ
100mV
ZXTP25100CZ
D-81541
TS16949
ZXTN25100DZ
ZXTN25100DZTA
ZXTP25100CZ
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PDF
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ZXTN2007Z
Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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Original
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ZXTN2007Z
ZXTN2007ZTA
TAP26100
ZXTN2007Z
ZXTN2007ZTA
ZXTN
MARKING 7A SOT89
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PDF
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ZXTP2014Z
Abstract: ZXTP2014ZTA
Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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Original
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ZXTP2014Z
-140V
ZXTP2014ZTA
ZXTP2014Z
ZXTP2014ZTA
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PDF
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Untitled
Abstract: No abstract text available
Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management
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FCX555
-180V
FCX555TA
FCX555
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PDF
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Untitled
Abstract: No abstract text available
Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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Original
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ZXTN2011Z
ZXTN2011ZTA
ZXTN20miconductors
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PDF
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Zetex ZXTP19100CZ
Abstract: No abstract text available
Text: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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Original
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ZXTN19100CZ
ZXTP19100CZ
D-81541
Zetex ZXTP19100CZ
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PDF
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Bv 42 transistor
Abstract: No abstract text available
Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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Original
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ZXTP2014Z
-140V
ZXTP2014ZTA
Bv 42 transistor
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PDF
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Zetex ZXTP19100CZ
Abstract: TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA
Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP
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Original
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ZXTP19100CZ
-100V
-130mV
ZXTN19100CZ
ZXTP19100CZTA
D-81541
Zetex ZXTP19100CZ
TS16949
ZXTN19100CZ
ZXTP19100CZ
ZXTP19100CZTA
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PDF
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ZXTN19060CZ
Abstract: TS16949 ZXTP19060CZ ZXTP19060CZTA
Text: ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BVCEO > -60V BVECO > -7V IC cont = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 2.4W Complementary part number ZXTN19060CZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor
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Original
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ZXTP19060CZ
-80mV
ZXTN19060CZ
ZXTP19060CZTA
D-81541
ZXTN19060CZ
TS16949
ZXTP19060CZ
ZXTP19060CZTA
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PDF
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TS16949
Abstract: ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA
Text: ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC cont = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ Description C Packaged in the SOT89 outline this new low saturation 12V PNP
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Original
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ZXTP25012EZ
-70mV
ZXTN25012EZ
D-81541
TS16949
ZXTN25012EZ
ZXTP25012EZ
ZXTP25012EZTA
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PDF
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TS16949
Abstract: ZXTN25020DZ ZXTP25020DZ ZXTP25020DZTA SOT89 transistor marking 5A
Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP
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Original
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ZXTP25020DZ
-65mV
ZXTN25020DZ
D-81541
TS16949
ZXTN25020DZ
ZXTP25020DZ
ZXTP25020DZTA
SOT89 transistor marking 5A
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PDF
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SOT89 transistor marking 851
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V Case: SOT89 IC = 5A High Continuous Current Case Material: Molded Plastic. “Green” Molding Compound.
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Original
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ZXTN2010Z
J-STD-020
ZXTP2012Z
MIL-STD-202,
DS33661
SOT89 transistor marking 851
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PDF
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ZX5T849Z
Abstract: ZX5T849ZTA MARKING 7A SOT89
Text: ZX5T849Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in
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Original
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ZX5T849Z
ZX5T849ZTA
ZX5T849Z
ZX5T849ZTA
MARKING 7A SOT89
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PDF
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