sot89 stencil
Abstract: sot89 land pattern Loctite 218 RG200 substrate 5989-0810EN LOCTITE-96sc Getek LOCTITE 384 RG200 laser gun
Text: SOT89 Package Application Note 5051 Introduction PCB Land Pattern and Stencil Design Avago Technologies SOT89 is a 3 I/O pins Figure 1 package platform designed to offer excellent heat dissipation and wide RF frequency response. The SOT89 package itself is lead free with a dimension of 4.1 mm
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5989-0810EN
sot89 stencil
sot89 land pattern
Loctite 218
RG200 substrate
LOCTITE-96sc
Getek
LOCTITE 384
RG200
laser gun
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Untitled
Abstract: No abstract text available
Text: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound
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BCX5316Q
J-STD-020
MIL-STD-202
-500mV
DS37033
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MARKING N93
Abstract: 4446 FCX493 FCX593 fcx493ta
Text: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.
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FCX493
FCX593
FCX493TA
FCX493TC
MAX00
MARKING N93
4446
FCX493
FCX593
fcx493ta
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SOT89 52 10A
Abstract: design ideas FCX1051A FCX1051ATA FCX1151A TS16949
Text: FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC cont = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89
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FCX1051A
120mV
FCX1151A
FCX1051ATA
D-81541
SOT89 52 10A
design ideas
FCX1051A
FCX1051ATA
FCX1151A
TS16949
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Untitled
Abstract: No abstract text available
Text: FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC cont = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89
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FCX1051A
120mV
FCX1151A
FCX1051ATA
D-81541
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Untitled
Abstract: No abstract text available
Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet Case: SOT89 Low Saturation Voltage VCE sat < -500mV @ -0.5A Case Material: Molded Plastic, “Green” Molding Compound
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BCX51/
-500mV
J-STD-020
BCX54,
MIL-STD-202
DS35368
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Untitled
Abstract: No abstract text available
Text: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.
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FCX493
FCX593
FCX493TA
FCX493TC
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FCX619
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FCX619 50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 50V Case: SOT89 IC = 3A high Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound
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FCX619
220mV
AEC-Q101
J-STD-020
FCX619
DS33067
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2DB1188P
Abstract: P23Q
Text: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V Case: SOT89 IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A Case material: Molded Plastic, "Green" Molding Compound.
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2DB1188P/Q/R
800mV
2DD1766
AEC-Q101
J-STD-020
MIL-STD-202,
DS31144
2DB1188P
P23Q
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BCX5216QTA
Abstract: No abstract text available
Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet Case: SOT89 Low Saturation Voltage VCE SAT < -500mV @ -0.5A Case Material: Molded Plastic, “Green” Molding Compound
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BCX51/
-500mV
J-STD-020
BCX54,
MIL-STD-202
DS35368
BCX5216QTA
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Untitled
Abstract: No abstract text available
Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V Case: SOT89 IC = -1A Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound ICM = -1.5A Peak Pulse Current
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BCX51/
-500mV
BCX54,
AEC-Q101
DS35368
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state
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ZXTP2008Z
ZX5T949Z
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FCX690BTA
Abstract: SOT89 MARKING CODE .3B
Text: A Product Line of Diodes Incorporated Green FCX690B 45V NPN HIGH GAIN POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 45V Case: SOT89 IC = 2A high Continuous Collector Current Case material: molded plastic. “Green” molding compound.
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FCX690B
300mV
FCX790A
AEC-Q101
J-STD-020
MIL-STD-202,
FCX690B
DS33070
FCX690BTA
SOT89 MARKING CODE .3B
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AM/mcl d01 94V0
Abstract: No abstract text available
Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V Case: SOT89 IC = -1A Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound ICM = -1.5A Peak Pulse Current
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BCX51/
-500mV
J-STD-020
BCX54,
MIL-STD-202
DS35368
AM/mcl d01 94V0
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ZXTN19020DZ
Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Text: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor
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ZXTP19020DZ
-47mV
ZXTN19020DZ
D-81541
ZXTN19020DZ
ZXTP19020DZ
ZXTP19020DZTA
TS16949
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Untitled
Abstract: No abstract text available
Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP
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ZXTP25020DZ
-65mV
ZXTN25020DZ
D-81541
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -40V Case: SOT89 IC = -5.5A High Continuous Current Case Material: Molded Plastic. “Green” Molding Compound.
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J-STD-020
-60mV
DS33419
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MARKING KN2
Abstract: No abstract text available
Text: DXT651 60V NPN LOW VCE sat TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V Case: SOT89 IC = 3A high Continuous Current Case material: Molded Plastic. “Green” Molding Compound. Low saturation voltage VCE(sat) < 300mV @ 1A
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DXT651
300mV
DXT751
AEC-Q101
J-STD-020
MIL-STD-202,
DS31184
MARKING KN2
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TS16949
Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN25100DZ
100mV
ZXTP25100CZ
D-81541
TS16949
ZXTN25100DZ
ZXTN25100DZTA
ZXTP25100CZ
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ZXTN2007Z
Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2007Z
ZXTN2007ZTA
TAP26100
ZXTN2007Z
ZXTN2007ZTA
ZXTN
MARKING 7A SOT89
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ZXTP2014Z
Abstract: ZXTP2014ZTA
Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZXTP2014Z
-140V
ZXTP2014ZTA
ZXTP2014Z
ZXTP2014ZTA
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SOT89 transistor marking 5A
Abstract: ZXTN2011Z ZXTN2011ZTA
Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2011Z
ZXTN2011ZTA
SOT89 transistor marking 5A
ZXTN2011Z
ZXTN2011ZTA
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Untitled
Abstract: No abstract text available
Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management
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FCX555
-180V
FCX555TA
FCX555
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Untitled
Abstract: No abstract text available
Text: SOT89 W hilst this S.M Package has been available fo r m any years there is a lack o f new specifications being offered in the SOT89 package, by m ost other suppliers. Zetex has addressed this void by in trod ucing a range of high perform ance 1.5 w a tt dissipation SOT89 transistors, offering the com bined benefits o f circuit efficiency and board
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