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    SOT89 TRANSISTOR MARKING 5A Search Results

    SOT89 TRANSISTOR MARKING 5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SOT89 TRANSISTOR MARKING 5A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR  FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V  APPLICATIONS


    Original     		PDF 2SD965/A 2SD965: 2SD965A: 2SD965G-x-AB3-R OT-89 2SD965L-x-T92-B 2SD965G-x-T92-B 2SD965L-x-T92-K 2SD965G-x-T92-K 2SD965L-x-TN3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR  1 FEATURES SOT-223 * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.


    Original     		PDF UP1868 OT-223 OT-89 UP1868G-AA3-R UP1868G-AB3-R UP1868G

    Untitled

    Abstract: No abstract text available
    Text: TSB1386 Low Frequency PNP Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -30V BVCEO -20V IC -5A VCE SAT Features   Ordering Information Low VCE(SAT) -0.35 @ IC / IB = -4A / -100mA (Typ.) Excellent DC current gain characteristics


    Original     		PDF TSB1386 OT-89 -100mA TSB1386CY

    transistor a09

    Abstract: marking 4a sot-89 sot-89 MARKING CODE 4A sot-89 marking code 5A "PNP Transistor" marking 3A sot-89 TSB1386 TSB1386CY SOT89 transistor marking 5A SOT89 MARKING CODE 5A
    Text: TSB1386 Low Frequency PNP Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -30V BVCEO -20V IC -5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.35 @ IC / IB = -4A / -100mA (Typ.) Excellent DC current gain characteristics


    Original     		PDF TSB1386 OT-89 -100mA TSB1386CY transistor a09 marking 4a sot-89 sot-89 MARKING CODE 4A sot-89 marking code 5A "PNP Transistor" marking 3A sot-89 TSB1386 SOT89 transistor marking 5A SOT89 MARKING CODE 5A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2470 NPN SILICON TRANSISTOR STROBO AND DC/DC CONVERTERS  FEATURES * Low saturation voltage V= 0.25V typ at IC/IB= 3A/0.1A * Collector current of 5A is possible  ORDERING INFORMATION Ordering Number Package Lead Free


    Original     		PDF 2SD2470 2SD2470G-x-AB3-R OT-89 2SD2470L-x-T9S-B 2SD2470G-x-T9S-B O-92SP 2SD2470L-x-T9S-K 2SD2470G-x-T9S-K

    SOT89 transistor marking 5A

    Abstract: 2SB1386R marking BHR SOT89 transistor marking 4A 2SB1386 2SD2098 2SB1386-R bhr sot-89 marking BHp SOT-23
    Text: 2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Low VCE sat Excellent DC current gain characteristics Complements the 2SD2098 4 1 2


    Original     		PDF 2SB1386 OT-89 2SD2098 2SB1386-P 2SB1386-Q 2SB1386-R -50mA, 30MHz 10-Dec-2010 SOT89 transistor marking 5A 2SB1386R marking BHR SOT89 transistor marking 4A 2SB1386 2SD2098 2SB1386-R bhr sot-89 marking BHp SOT-23

    transistor marking 6A

    Abstract: ZXTN2010Z ZXTN2010ZTA
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z transistor marking 6A ZXTN2010Z ZXTN2010ZTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z

    ZXTN2010ZTA

    Abstract: ZXTN2010Z 0019E
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z ZXTN2010ZTA ZXTN2010Z 0019E

    npn 120v 10a transistor

    Abstract: ZX5T851Z ZX5T851ZTA
    Text: ZX5T851Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T851Z npn 120v 10a transistor ZX5T851Z ZX5T851ZTA

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    SOT89 transistor marking 5A

    Abstract: BTC5103M3 MARKING 5A SOT-89
    Text: CYStech Electronics Corp. Spec. No. : C651M3 Issued Date : 2003.11.07 Revised Date : Page No. : 1/4 NPN Epitaxial Planar Transistor BTC5103M3 Features • High IC, IC DC =5A • Low VCE(sat), 0.3V typically • Good current gain linearity Symbol Outline BTC5103M3


    Original     		PDF C651M3 BTC5103M3 OT-89 UL94V-0 SOT89 transistor marking 5A BTC5103M3 MARKING 5A SOT-89

    2DD2098

    Abstract: KP3Q 4A SOT89 MARKING CODE
    Text: 2DB1386Q/R 20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -20V    IC = -5A high Continuous Current Low saturation voltage VCE sat < -1V @ -4A  Case Material: Molded Plastic, "Green” Molding Compound.  UL Flammability Classification Rating 94V-0


    Original     		PDF 2DB1386Q/R 2DD2098 AEC-Q101 J-STD-020 MIL-STD-202, DS31147 KP3Q 4A SOT89 MARKING CODE

    SOT89 transistor marking 5A

    Abstract: 13w transistor sot 23 SOT-89 marking sc 003A MARKING TRANSISTOR high voltage npn transistor SOT-89
    Text: CHENMKO ENTERPRISE CO.,LTD CHT5564XPT SURFACE MOUNT NPN Epitaxial Transistor VOLTAGE 15 Volts CURRENT 6 Amperes APPLICATION * DC to DC relay drivers,lamp drivers FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.18V(IC/IB=1.5A/0.03A)


    Original     		PDF CHT5564XPT SC-62/SOT-89 SC-62/SOT-89) 100MHz 300uSec; SOT89 transistor marking 5A 13w transistor sot 23 SOT-89 marking sc 003A MARKING TRANSISTOR high voltage npn transistor SOT-89

    Marking P35

    Abstract: transistor p35 Marking P35 sot89 SOT89 transistor marking 5A DPLS350Y Diodes P35
    Text: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM up to -5A Peak Pulse Current 


    Original     		PDF DPLS350Y -180mV AEC-Q101 J-STD-020 MIL-STD-202, DS31149 Marking P35 transistor p35 Marking P35 sot89 SOT89 transistor marking 5A DPLS350Y Diodes P35

    TS16949

    Abstract: ZXTN25020DZ ZXTP25020DZ ZXTP25020DZTA SOT89 transistor marking 5A
    Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP


    Original     		PDF ZXTP25020DZ -65mV ZXTN25020DZ D-81541 TS16949 ZXTN25020DZ ZXTP25020DZ ZXTP25020DZTA SOT89 transistor marking 5A

    Untitled

    Abstract: No abstract text available
    Text: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current   ICM up to -5A Peak Pulse Current    2W Power Dissipation Low Saturation Voltage VCE sat < -180mV @ 1A


    Original     		PDF DPLS350Y -180mV AEC-Q101 J-STD-020 DS31149

    Untitled

    Abstract: No abstract text available
    Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP


    Original     		PDF ZXTP25020DZ -65mV ZXTN25020DZ D-81541

    MARKING 851

    Abstract: SOT89 MARKING CODE 5A SOT89 transistor marking 851
    Text: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 60V High current capability Max Continuous Current IC = 5A


    Original     		PDF ZXTN2010Z ZXTP2012Z AEC-Q101 J-STD-020 ZXTN2010Z DS33661 MARKING 851 SOT89 MARKING CODE 5A SOT89 transistor marking 851

    SOT89 transistor marking 851

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.


    Original     		PDF ZXTN2010Z J-STD-020 ZXTP2012Z MIL-STD-202, DS33661 SOT89 transistor marking 851

    Motorola transistor smd marking codes

    Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
    Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases


    Original     		PDF OT-89 OT-223 C-120, 2001MD, Motorola transistor smd marking codes SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d

    ZXTN25060BZTA

    Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
    Text: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZXTN25060BZ D-81541 ZXTN25060BZTA TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7

    TS16949

    Abstract: ZXTN25040DZ ZXTN25040DZTA ZXTP25040DZ ZXTN
    Text: ZXTN25040DZ 40V, SOT89, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 2.4W Complementary part number ZXTP25040DZ Description C Packaged in the SOT89 outline this new low saturation 40V NPN


    Original     		PDF ZXTN25040DZ ZXTP25040DZ D-81541 TS16949 ZXTN25040DZ ZXTN25040DZTA ZXTP25040DZ ZXTN

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p