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    664G-05LF Renesas Electronics Corporation Digital Video Clock Source Visit Renesas Electronics Corporation
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    Texas Instruments LIGHTSOURCE01EVM

    STABLE LIGHT SOURCE FOR CALIBRAT
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    DigiKey LIGHTSOURCE01EVM Box 3 1
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    Texas Instruments BT-MSPAUDSOURCE

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    Tempo Communications Inc SC-SOURCE

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    SOURCE Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGMB201209C070 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209R102 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
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    SGMB201209R601 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209R751 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S101 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S102 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S110 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S121 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S151 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S152 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S170 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S221 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S260 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S301 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S310 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
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    SOURCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    YTF822

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSn YTF822 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. 03.6±O.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance


    OCR Scan     		PDF YTF822 20kXi) YTF822

    2SK578

    Abstract: 2SK57
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK578 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE, DC-DC CONVERTER AND SWITCHING REGURATOR APPLICATIONS. #3,3±Q.2 FEATURES: . Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK578 0-22n 0-a25 2SK578 2SK57

    YTFP450

    Abstract: SC651
    Text: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :


    OCR Scan     		PDF YTFP450 VDS-10V, 00A/ps YTFP450 SC651

    ST NE556

    Abstract: NES56 NE556J NE556 applications NE555
    Text: NES56, SA556, SE556, SE556C DUAL PRECISION TIMERS SLFS023A - A P R IL 1978 - REVISED O CTO BER 1992 • Two Precision Timing Circuits per Package • Astable or Monostable Operation • TTL-Compatible Output Can Sink or Source Up to 150mA • Active Pullup or Pulldown


    OCR Scan     		PDF NES56, SA556, SE556, SE556C SLFS023A 150mA SE556C, NE556 ST NE556 NES56 NE556J NE556 applications NE555

    Untitled

    Abstract: No abstract text available
    Text: U T 5 4 A C S 151 / U T 5 4 A C T S 151 Radiation-Hardened 1 of 8 Data Selectors/Multiplexers PINOUTS FEATURES 16-Pin DIP Top View • 8-line to 1-line multiplexers can perform as -Boolean function generators, parallel-to-serial converters, and data source selectors


    OCR Scan     		PDF 16-pin 16-lead UT54ACS151 UT54ACTS151 151AIT

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000


    OCR Scan     		PDF TIM0910-15L 30dBm 145mA 2-11C1B)

    MG30G2YM1

    Abstract: LD30A
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance


    OCR Scan     		PDF MG30G2YM1 15AIN-SOURCE MG30G2YM1 LD30A

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK1359 Field Effect Transistor U nit in m m Silicon N Channel MOS Type tc-MOS 11.5 15.9MAX High Speed, High Current DC-DC Converter, 032±O2 & Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance cJ " Rds(ON) = 3-OQ (Typ.)


    OCR Scan     		PDF 2SK1359

    Untitled

    Abstract: No abstract text available
    Text: y UC1711 UC3711 UNITRODE Dual Ultra High-Speed FET Driver 15ns Propagation Delay 1.5A Source or Sink Output Drive Operation with 5V to 35V Supply High-Speed Schottky NPN Process 8-PIN MINIDIP Package ABSOLUTE MAXIMUM RATINGS note 1 Input Supply Voltage, V c c . 40V


    OCR Scan     		PDF UC1711 UC3711 10OOpF UC1709 UC1711. UC1711,

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)


    OCR Scan     		PDF TPC8103

    2SK388

    Abstract: 2sk38
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK388 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. zasMAX. 0a3±Q2 FEATURES: . Low Drain-Source ON Resistance : RDS(o n )=0 -2 ^ ( TyP•)


    OCR Scan     		PDF 2SK388 100nA 2SK388 2sk38

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ567 TOSHIBA Field Effect Transistor TEN TA TIVE] Silicon P Channel MOS Type ji-M OSV 2SJ567 Switching Applications Chopper Regulator, D C -D C Converter and Motor Drive Applications Features • Low drain-source ON resistance: R d S (ON) = 1.6 £2 (typ.)


    OCR Scan     		PDF 2SJ567

    MG15D6EM1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG15D6EM1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance


    OCR Scan     		PDF MG15D6EM1 MG15D6EM1

    S3036

    Abstract: No abstract text available
    Text: 6. Contact Sensor Module 6-1 Outline The contact sensor m odule is an im age reader unit which integrates an im age sensor, lens, light source and control circuit. T he contact sensor m odule has the follow ing fea­ tures. 1 O ptical design is not necessary


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : RDS(ON) = 100m n (Typ.)


    OCR Scan     		PDF TPC8302

    2SK1357

    Abstract: 2Sk1357 transistor
    Text: 2SK1357 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jt-MOS h -5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. 1 5.9 MAX. *3.2±0 2 FEATURES: • Low Drain-Source ON Resistance : RDS(0N)=2.5Q (Typ.) •High Forward Transfer Admittance : I Y f s ! = 2. 0S( Typ. )


    OCR Scan     		PDF 2SK1357 300/uA 10jKS 2SK1357 2Sk1357 transistor

    2SK1928

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance


    OCR Scan     		PDF 2SK1928 ij100A/MS 2SK1928

    Untitled

    Abstract: No abstract text available
    Text: fl TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M OSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES A N D TOOLS NOTE BOOK PC • • • • INDUSTRIAL APPLICATIONS Unit in mm 8 5 fl fi H fl Low Drain-Source ON Resistance : RßS (ON) ~ lömO (Typ.)


    OCR Scan     		PDF TPC8001 g--10

    TL4941

    Abstract: TL495C TL494C pin diagram TL493C TL495 TL493 ST TL493 L495C tl 494 L493
    Text: TL493, TL494, TL495 PULSE WIDTH MODULATION CONTROL CIRCUITS D 2 5 3 5 , JA N U A R Y 1 9 8 3 Complete PW M Power Control Circuitry • Uncommitted Outputs for 2 0 0 -m A Sink or Source Current Output Control Selects Single-Ended or Push-Pull Operation •


    OCR Scan     		PDF TL493, TL494, TL495 TL4941 TL495C TL494C pin diagram TL493C TL493 ST TL493 L495C tl 494 L493

    transistor 2SK1120

    Abstract: CL226 2SK1120
    Text: TOSHIBA 2SK1120 Field Effect Transistor Industrial Applications Unit in m m Silicon N Channel MOS Type rc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK1120 --300nA transistor 2SK1120 CL226 2SK1120

    800v nmos

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)


    OCR Scan     		PDF 2SK1365 800v nmos

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2550 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2550 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2550 24mfl 20kil)

    2SK2030

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2030 Field Effect Transistor Unit in mm Silicon N Channel M OS Type ti-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " r d s (ON) = 0.1 OQ (Typ.) • High Forward Transfer Adm ittance - Yfs = 3 .OS (Typ.)


    OCR Scan     		PDF 2SK2030 2SK2030

    2SK526

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ?r-MOS 2SKS26 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER, MOTOR AND SOLENDOID DRIVE APPLICATIONS. 10.3MAX. 03.2±O.2 FEATURES: . Low Drain-Source ON Resistance : Rd S (ON)=0. 4 (Typ.)


    OCR Scan     		PDF 2SKS26 100nA 2SK526 2SK526