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    bta41-600b application

    Abstract: po130aa BTA41-600B TYN616 BTA41-800B BTB24-600BW BTA06-600B bta40 circuit TYN1012 BTA26-800B internal circuit
    Text: Thyristors Advanced Power Switching Reference Guide SENSITIVE GATE SCRs IT RMS (A) VRRM / VDRM (V) P/N ITSM* (A) IGT max (µA) IH max (mA) 0.25 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 1.25 1.25 1.25 1.25 1.25 1.25 1.25 1.25 4 4 4 4 4 4 4


    Original     		P0102BL P0102DA P0102DN P0111DA P0111DN P0118DA P0118DN XL0840 P0102MA P0102MN bta41-600b application po130aa BTA41-600B TYN616 BTA41-800B BTB24-600BW BTA06-600B bta40 circuit TYN1012 BTA26-800B internal circuit PDF

    JIS B 0409

    Abstract: igbt STM marking IGBT 2000V .50A
    Text: STTA512D/F/B TURBOSWITCH tm ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 5A I f a v V 1200V rrm 45ns trr (typ) V f 2.0V (max) FEATURES AND BENEFITS • SPECIFICTO THE FOLLOWINGOPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION


    OCR Scan     		STTA512D/F/B JIS B 0409 igbt STM marking IGBT 2000V .50A PDF

    D 843 Transistor

    Abstract: 843FI e IRF 840 Application of irf840 IRF840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840
    Text: rZ Z * •1 Ë . SGS-THOM SON IRF 840/FI-841/FI « » IL lË T O M O e s_IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R d S od IRF840 IRF840FI 500 V 500 V 0.85 n 0.85 a IRF841 IRF841FI 450 V 450 V 0.85 n 0.85 Q IRF842


    OCR Scan     		840/FI-841/FI 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor 843FI e IRF 840 Application of irf840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840 PDF