Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SPA 11N60C2 Search Results

    SPA 11N60C2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    GCM033C70J104KE02J Murata Manufacturing Co Ltd 0201 (0603M) X7S (EIA) 6.3Vdc 0.1μF±10% Visit Murata Manufacturing Co Ltd
    GRT155R61A106ME13J Murata Manufacturing Co Ltd 0402 (1005M) X5R (EIA) 10Vdc 10μF±20% Visit Murata Manufacturing Co Ltd
    GRT21BD72A225KE13K Murata Manufacturing Co Ltd 0805 (2012M) X7T (EIA) 100Vdc 2.2μF±10% Visit Murata Manufacturing Co Ltd
    KC355QD7LF224KH01K Murata Manufacturing Co Ltd X7T (EIA) 1000Vdc 0.22μF±10% Visit Murata Manufacturing Co Ltd

    SPA 11N60C2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPA11N60C2 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220FP, RDSon=0.38 ?, 5.5A Original PDF
    SPA11N60C2 Infineon Technologies Cool MOS Power Amp., 650V 11A 33W, MOS-FET N-Channel enhanced Original PDF

    SPA 11N60C2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    11n60c2

    Abstract: 11n60c2 equivalent transistor 11n60c2 11n60c2* equivalents 11N60C spa 11n60c2 2002-08-12 11N6 SPB11N60C2 SPP11N60C2
    Text: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω • Periodic avalanche rated ID 11 A • Extreme dv/dt rated


    Original     		SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 Q67040-S4295 11n60c2 11n60c2 equivalent transistor 11n60c2 11n60c2* equivalents 11N60C spa 11n60c2 2002-08-12 11N6 SPB11N60C2 SPP11N60C2 PDF

    11n60c2

    Abstract: transistor 11n60c2 spa 11n60c2
    Text: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated ID • Extreme dv/dt rated


    Original     		SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 11n60c2 transistor 11n60c2 spa 11n60c2 PDF