SPN4506 Search Results

SPN4506

Abstract: Vgs 40V mosfet mosfet gate source voltage 20v
Text: SPN4506 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4506 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.