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    SPP03N60 Search Results

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    SPP03N60 Price and Stock

    Rochester Electronics LLC SPP03N60C3XKSA1

    MOSFET N-CH 600V 3.2A TO220-3
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    DigiKey SPP03N60C3XKSA1 Tube 799
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    Infineon Technologies AG SPP03N60C3XKSA1

    LOW POWER_LEGACY
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    Verical SPP03N60C3XKSA1 521,907 924
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    SPP03N60C3XKSA1 76,000 924
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    SPP03N60C3XKSA1 24,665 924
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    SPP03N60C3XKSA1 2,011 924
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    Rochester Electronics SPP03N60C3XKSA1 624,583 1
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    Infineon Technologies AG SPP03N60S5HKSA1

    MOSFET N-CH 600V 3.2A TO220-3
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    DigiKey SPP03N60S5HKSA1 Tube 500
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    Infineon Technologies AG SPP03N60S5XKSA1

    LOW POWER_LEGACY
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    Verical SPP03N60S5XKSA1 30,800 572
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    SPP03N60S5XKSA1 17,130 572
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    SPP03N60S5XKSA1 9,505 572
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    SPP03N60S5XKSA1 2,500 572
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    SPP03N60S5XKSA1 1,500 572
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    SPP03N60S5XKSA1 45 21
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    Arrow Electronics SPP03N60S5XKSA1 45 52 Weeks 1
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    Rochester Electronics SPP03N60S5XKSA1 62,065 1
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    Rochester Electronics LLC SPP03N60S5XKSA1

    MOSFET N-CH 600V 3.2A TO220-3
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    DigiKey SPP03N60S5XKSA1 Tube 495
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    SPP03N60 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP03N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP03N60C3 Infineon Technologies CoolMOS Power MOS, 600V, TO-220, RDSon=1.40 ?, 3.2A Original PDF
    SPP03N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP03N60C3HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 3.2A TO-220AB Original PDF
    SPP03N60C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF
    SPP03N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP03N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP03N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=1.40 ?, 3.2A Original PDF
    SPP03N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPP03N60S5HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 3.2A TO-220AB Original PDF
    SPP03N60S5XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF

    SPP03N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    03N60S5

    Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: SPP03N60S5 SPB03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original
    PDF SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 SPP03N60S5 P-TO220-3-1 P-TO263-3-2 03N60S5 Q67040-S4184 03N60S5 Q67040-S4184 SPB03N60S5

    Untitled

    Abstract: No abstract text available
    Text: SPP03N60C3 SPB03N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated R DS on 1.4 Ω • Extreme dv/dt rated ID 3.2 A • High peak current capability


    Original
    PDF SPP03N60C3 SPB03N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4401 Q67040-S4391

    Untitled

    Abstract: No abstract text available
    Text: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4184 Q67040-S4197

    03N60C3

    Abstract: SPB03N60C3 03n60 SPP03N60C3 SPA03N60C3 ID32 transistor smd list spa03n
    Text: Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original
    PDF SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP03N60C3 03N60C3 SPB03N60C3 03n60 SPP03N60C3 SPA03N60C3 ID32 transistor smd list spa03n

    03N60S5

    Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5 P-TO-263-3-2
    Text: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4184 03N60S5 03N60S5 Q67040-S4184 SPB03N60S5 SPP03N60S5 P-TO-263-3-2

    SPPX4N60S5

    Abstract: 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original
    PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 SPPx4N60S5/SPBx4N60S5 Q67040-S4184 03N60S5 SPPX4N60S5 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5

    03N60C3

    Abstract: SPP03N60C3 SDP06S60 SPB03N60C3
    Text: SPP03N60C3 SPB03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original
    PDF SPP03N60C3 SPB03N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4401 03N60C3 03N60C3 SPP03N60C3 SDP06S60 SPB03N60C3

    diode 1538

    Abstract: No abstract text available
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original
    PDF SPP03N60S5 P-TO220-3-1 PG-TO220-3-1 SPP03N60S5 PG-TO220-3-1 Q67040-S4184 03N60S5 diode 1538

    Untitled

    Abstract: No abstract text available
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original
    PDF SPP03N60S5 PG-TO220 P-TO220-3-1 Q67040-S4184 03N60S5

    03N60C3

    Abstract: No abstract text available
    Text: SPP03N60C3 SPB03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω


    Original
    PDF SPP03N60C3 SPB03N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4401 Q67040-S4391 03N60C3

    03n60s5

    Abstract: No abstract text available
    Text: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4184 Q67040-S4197 03n60s5

    SMD Transistor g20

    Abstract: 03N60C3 2535-r
    Text: SPP03N60C3, SPB03N60C3 SPA03N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original
    PDF SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP03N60C3 SMD Transistor g20 03N60C3 2535-r

    Untitled

    Abstract: No abstract text available
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original
    PDF SPP03N60S5 P-TO220-3-1 PG-TO220-3-1 SPP03N60S5 PG-TO220-3-1 Q67040-S4184 03N60S5

    03n60s5

    Abstract: TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original
    PDF SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-TO220-3-1 03N60S5 Q67040-S4184 P-TO263-3-2 SPP03N60S5 03n60s5 TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5

    TRANSISTOR SMD MARKING CODE 2A

    Abstract: 03N60S5 Q67040-S4184 SPP03N60S5
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original
    PDF SPP03N60S5 PG-TO220 P-TO220-3-1 Q67040-S4184 03N60S5 TRANSISTOR SMD MARKING CODE 2A 03N60S5 Q67040-S4184 SPP03N60S5

    03N60S5

    Abstract: P-TO263-3-2 P-TO-263-3-2 03N60S5 TO263 TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5 SPP03N60S5 diode 1538 03n60
    Text: SPP03N60S5 SPB03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original
    PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4184 03N60S5 03N60S5 P-TO263-3-2 P-TO-263-3-2 03N60S5 TO263 TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5 SPP03N60S5 diode 1538 03n60

    03N60C3

    Abstract: SDP06S60 SPB03N60C3 SPP03N60C3 03n60
    Text: SPP03N60C3 SPB03N60C3 Final data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2 A •=High peak current capability


    Original
    PDF SPP03N60C3 SPB03N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4401 03N60C3 03N60C3 SDP06S60 SPB03N60C3 SPP03N60C3 03n60

    03N60S5

    Abstract: Q67040-S4184 SPP03N60S5
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original
    PDF SPP03N60S5 PG-TO220 P-TO220-3-1 Q67040-S4184 03N60S5 03N60S5 Q67040-S4184 SPP03N60S5

    03n60s5

    Abstract: SPP03N60S5 Q67040-S4184 SPB03N60S5 P-TO-263-3-1 diode 1538
    Text: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 1.4 Ω • Optimized capacitances


    Original
    PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4184 03N60S5 Q67040-S4197 03n60s5 SPP03N60S5 Q67040-S4184 SPB03N60S5 P-TO-263-3-1 diode 1538

    03N60C3

    Abstract: No abstract text available
    Text: SPP03N60C3, SPB03N60C3 SPA03N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original
    PDF SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP03N60C3 03N60C3

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original
    PDF SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Text: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original
    PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original
    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    DIODE JS.9 smd

    Abstract: No abstract text available
    Text: SIEMENS SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan
    PDF SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-T0220-3-1 03N60S5 Q67040-S4184 P-T0263-3-2 DIODE JS.9 smd