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Vishay Siliconix SQJ410EP-T1_GE3 MOSFET N-CH 30V 32A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SQJ410EP-T1_GE3	Cut Tape			1	1 $3.16 10 $2.055 100 $3.16 1000 $1.06823 10000 $1.06823	Buy Now
	SQJ410EP-T1_GE3	Digi-Reel			1	1 $3.16 10 $2.055 100 $3.16 1000 $1.06823 10000 $1.06823	Buy Now
	SQJ410EP-T1_GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.98387	Buy Now
Vishay Intertechnologies SQJ410EP-T1_GE3 Trans MOSFET N-CH 30V 32A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ410EP-T1_GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SQJ410EP-T1_GE3	Reel		20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.96814	Buy Now
Mouser Electronics	SQJ410EP-T1_GE3		26,198			1 $2.63 10 $1.88 100 $1.43 1000 $1.06 10000 $0.975	Buy Now
EBV Elektronik	SQJ410EP-T1_GE3			21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SQJ410EP-T1-GE3 MOSFETs RECOMMENDED ALT SQJ4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SQJ410EP-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.31	Buy Now
EBV Elektronik	SQJ410EP-T1-GE3			26 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SQJ410EP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SQJ410EP-T1_GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 32A POWERPAKSO-8		Original	PDF

SQJ410EP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SQJ410EP-T1-GE3 Abstract: No abstract text available Text: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested	Original	PDF	SQJ410EP AEC-Q101 SQJ410EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQJ410EP-T1-GE3
Untitled Abstract: No abstract text available Text: SQJ410EP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	SQJ410EP AN609, 5072m 4090m 1436m 9402m 1095m 1706m 3627m 5485m
Untitled Abstract: No abstract text available Text: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A)	Original	PDF	SQJ410EP AEC-Q101 2002/95/EC SQJ410EP-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested	Original	PDF	SQJ410EP AEC-Q101 SQJ410EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SQJ410EP Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) • TrenchFET Power MOSFET	Original	PDF	SQJ410EP 2002/95/EC AEC-Q101 SQJ410EP-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A)	Original	PDF	SQJ410EP AEC-Q101 2002/95/EC SQJ410EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SPICE Device Model SQJ410EP www.vishay.com Vishay Siliconix N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SQJ410EP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SQJ410EP Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) • TrenchFET Power MOSFET	Original	PDF	SQJ410EP 2002/95/EC AEC-Q101 SQJ410EP-T1-GE3 11-Mar-11
DPAK/TO-252 Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the	Original	PDF	Ups-2726 VMN-PL0469-1311 DPAK/TO-252
SQJ469ep Abstract: SQ4483BE Text: Vishay Intertechnology, Inc. AEC-Q101 QUALIFIED SQ RUGGED SERIES MOSFET s ThunderFET ≥ 100 V, Low On-Resistance and Low FOM OPTIMIZED PowerPAK® SO-8L Optimum High and Low Side Combination in a 5 mm x 6 mm Package for Synchronous Buck PowerPAK SO-8L 1/2 the Size of	Original	PDF	AEC-Q101 AEC-Q101 TS-16949 VMN-MS6925-1406 SQJ469ep SQ4483BE
sq4435 Abstract: SQP120N10-09 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.	Original	PDF	VMN-PL0469-1505 sq4435 SQP120N10-09
SQ2315ES Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10 Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects	Original	PDF	AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
VMN-SG2151-1406 Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param	Original	PDF	AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/	Original	PDF	AEC-Q101 VMN-SG2151-1212