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    SQM110N06 Search Results

    SQM110N06 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SQM110N06-04L-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 120A TO263 Original PDF

    SQM110N06 Datasheets Context Search

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    SQM110N06

    Abstract: SQM110N06-06
    Text: SQM110N06-06 Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd


    Original
    PDF SQM110N06-06 AEC-Q101 2002/95/EC O-263 O-263 SQM110N06-06-GE3 18-Jul-08 SQM110N06 SQM110N06-06

    Untitled

    Abstract: No abstract text available
    Text: SQM110N06-04L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0050


    Original
    PDF SQM110N06-04L AEC-Q101 2002/95/EC O-263 O-263 SQM110N06-04L-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQM110N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.006 ID (A) • TrenchFET Power MOSFET • Package with Low Thermal Resistance


    Original
    PDF SQM110N06-06 O-263 AEC-Q101 2002/95/EC SQM110N06-06-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQM110N06-04L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0050


    Original
    PDF SQM110N06-04L AEC-Q101 2002/95/EC O-263 O-263 SQM110N06-04L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 60 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0035 ID (A) Configuration RoHS • Package with Low Thermal Resistance


    Original
    PDF SQM110N06-04L AEC-Q101 O-263 O-263 SQM110N06-04L-GE3 18-Jul-08

    SQM110N06-04L

    Abstract: No abstract text available
    Text: SPICE Device Model SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SQM110N06-04L 18-Jul-08 SQM110N06-04L

    Untitled

    Abstract: No abstract text available
    Text: SQM110N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.006 ID (A) • TrenchFET Power MOSFET • Package with Low Thermal Resistance


    Original
    PDF SQM110N06-06 O-263 AEC-Q101 2002/95/EC SQM110N06-06-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SQM110N06

    Abstract: No abstract text available
    Text: SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0050 ID (A) • TrenchFET Power MOSFET


    Original
    PDF SQM110N06-04L AEC-Q101 2002/95/EC O-263 O-263 SQM110N06-04L-GE3 18-Jul-08 SQM110N06

    Untitled

    Abstract: No abstract text available
    Text: SQM110N06-04L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0050


    Original
    PDF SQM110N06-04L AEC-Q101 2002/95/EC O-263 SQM110N06-04L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    C90-60

    Abstract: No abstract text available
    Text: SQM110N06-06 Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd


    Original
    PDF SQM110N06-06 AEC-Q101 2002/95/EC O-263 SQM110N06-06-GE3 18-Jul-08 C90-60

    sqm110n06

    Abstract: No abstract text available
    Text: SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 60 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0035 ID (A) Configuration RoHS • Package with Low Thermal Resistance


    Original
    PDF SQM110N06-04L AEC-Q101 O-263 O-263 SQM110N06-04L-GE3 18-Jul-08 sqm110n06

    Untitled

    Abstract: No abstract text available
    Text: SQM110N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.006 ID (A) • TrenchFET Power MOSFET • Package with Low Thermal Resistance


    Original
    PDF SQM110N06-06 AEC-Q101 2002/95/EC O-263 O-263 SQM110N06-06-GE3 11-Mar-11

    SQM110N06-04L

    Abstract: SQM110N06
    Text: SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.0035 RDS(on) (Ω) at VGS = 4.5 V 0.0050 ID (A) • TrenchFET Power MOSFET


    Original
    PDF SQM110N06-04L 2002/95/EC AEC-Q101 O-263 SQM110N06-04L-GE3 18-Jul-08 SQM110N06-04L SQM110N06

    Untitled

    Abstract: No abstract text available
    Text: SQM110N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.006 ID (A) • TrenchFET Power MOSFET • Package with Low Thermal Resistance


    Original
    PDF SQM110N06-06 AEC-Q101 2002/95/EC O-263 O-263 SQM110N06-06-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.