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    SRAM Search Results

    SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - SRAM Visit Rochester Electronics LLC Buy
    27S03ALM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
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    SRAM Price and Stock

    Vishay Sfernice ACCSRAMKWIRESOB069

    ACCS RAMK WIRESOE4 069 B005
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    DigiKey ACCSRAMKWIRESOB069 Box 13 1
    • 1 $49.26
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    • 100 $31.7141
    • 1000 $30
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    AirBorn Inc VSRAM-04-30-50-04-G

    HIGH SPEED / HIGH DENSITY CONNEC
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    DigiKey VSRAM-04-30-50-04-G Tray 4 1
    • 1 $385.62
    • 10 $303.441
    • 100 $303.441
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    Powell Electronics VSRAM-04-30-50-04-G 6 1
    • 1 $385.23
    • 10 $287.98
    • 100 $287.98
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    Vishay Sfernice ACCSRAMKUSBINTB071

    ACCS RAMK USBINT E4 071 B001
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    DigiKey ACCSRAMKUSBINTB071 Box 3 1
    • 1 $424.31
    • 10 $353.1
    • 100 $321.4889
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    NXP Semiconductors LFVCALSRAM2

    16 BIT 2MB VERTICAL CALIBRATION
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    DigiKey LFVCALSRAM2 Bulk 1
    • 1 $424.53
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    Avnet Americas LFVCALSRAM2 Box 1
    • 1 $329.3325
    • 10 $323.9775
    • 100 $307.9125
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    Newark LFVCALSRAM2 Bulk 1
    • 1 $382.89
    • 10 $372.18
    • 100 $350.76
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    NXP Semiconductors LFVCALSRAM2
    • 1 $315
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    AirBorn Inc VSRAM-06-50-50-04-N

    MOTORS & SOLENOIDS
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    DigiKey VSRAM-06-50-50-04-N Bulk 2
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    • 10 $804.825
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    Interstate Connecting Components VSRAM-06-50-50-04-N
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    SRAM Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SRAM20100LCT10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM20100LCT85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM20100LLC10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM20100LLC70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM20100LLC85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256LC10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256LC70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256LC85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256LLC10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256LLC70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256LLC85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256SLC10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256SLC70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM2A256SLC85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRAM4 Allied Signal Aerospace Company x1 SRAM Scan PDF

    SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


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    PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    UNITRODE

    Abstract: No abstract text available
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles


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    PDF bq4014/bq4014Y 32-pin 10-year 256Kx8 bq4014 152-bit UNITRODE

    lpc1769

    Abstract: ARM LPC1769 instruction set LPC1768 bootloader lpc1768 gpio lpc1768fbd LPC236 LPC17XX LPC1766 NXP bootloader LPC1768 spi Crystal oscillator 12 MHz
    Text: LPC1769/68/67/66/65/64/63 32-bit ARM Cortex-M3 microcontroller; up to 512 kB flash and 64 kB SRAM with Ethernet, USB 2.0 Host/Device/OTG, CAN Rev. 9 — 10 August 2012 Product data sheet 1. General description The LPC1769/68/67/66/65/64/63 are ARM Cortex-M3 based microcontrollers for


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    PDF LPC1769/68/67/66/65/64/63 32-bit LPC1769/68/67/66/65/64/63 LPC1768/67/66/65/64/63 LPC1769 ARM LPC1769 instruction set LPC1768 bootloader lpc1768 gpio lpc1768fbd LPC236 LPC17XX LPC1766 NXP bootloader LPC1768 spi Crystal oscillator 12 MHz

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


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    PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    TEXAS INSTRUMENTS, Mold Compound, CSP

    Abstract: No abstract text available
    Text: SM320C6202ĆEP FIXEDĆPOINT DIGITAL SIGNAL PROCESSOR SGUS044–JULY 2003 D Controlled Baseline D D D D D D D D D D 3M-Bit On-Chip SRAM – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –40°C to 105°C Enhanced Diminishing Manufacturing


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    PDF SM320C6202EP SGUS044 SM320C62x 200-MHz 32-Bit 32-/40-Bit) 16-Bit TEXAS INSTRUMENTS, Mold Compound, CSP

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


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    PDF bq4010/bq4010Y 28-pin 10-year bq4010 536-bit

    Untitled

    Abstract: No abstract text available
    Text: bq2204A X4 SRAM Nonvolatile Controller Unit General Description Features ä Power monitoring and switching for 3-volt battery-backup applications ä Write-protect control ä 2-input decoder for control of up to 4 banks of SRAM ä 3-volt primary cell inputs


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    PDF bq2204A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2325FF-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2 ,0 9 7 ,1 5 2 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst


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    PDF TC55V2325FF-100 TC55V2325FF 64KX32 LQFP100-P-1420-0

    th50vsf1400

    Abstract: BA30
    Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory


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    PDF 50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30

    UM62*512

    Abstract: No abstract text available
    Text: UM62L512 Series 6 4 K X 8 LOW VOLTAGE CMOS SRAM PRELIMINARY Features • Single + 3.3V power supply ■ Access times: 70/100 ns max. * Current: Low power version: Operating: 40mA ■ Directly TTL compatible: All inputs and outputs ■ Comm on I/O using three-state output


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    PDF UM62L512 32-pin 288bit UM62L512V-70L UM62L512V-70LL UM62L512VR-70L UM62L512VR-70LL UM62L512-10L UM62*512

    Untitled

    Abstract: No abstract text available
    Text: o bq4850Y U N I T R O D E - RTC Module with 512Kx8 SRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a non­ volatile 4,194,304-bit SRAM organ­


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    PDF bq4850Y 512Kx8 304-bit 32-pin

    UM61256FK-15

    Abstract: um61256fs 15 UM61256FS-15 um61256f um61256fk15 UM61256FK UM61256FM-25 um61256 UM61256FK-12 um61256fs
    Text: UM61256F Seríes 32K X a High Speed CMOS SRAM Features • * ■ ■ ■ Single +5V power supply ■ Access times: 12 /15/2 5 ns max. ■ Current: Operating: 150mA (max.) Standby: 12mA (max.) ■ Full static operation, no clock o r refreshing required Directly TTL compatible: All inputs and outputs


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    PDF UM61256F 150mA 28-pin 144-bit UM61256FK-12 UM61256FS-12 UM61256FK-15 UM61256FS-15 um61256fs 15 um61256fk15 UM61256FK UM61256FM-25 um61256 um61256fs

    um611864

    Abstract: No abstract text available
    Text: a S amar a a P R E L IM IN A R Y - UM611864 64K X 18 Bit Synchronous High Speed CMOS SRAM Features Single +5V power supply Fast access times: 9/11 ns Current: Operating: 275mA Standby: 95mA Synchronous self-timed write Individual byte write control Asynchronous output enable


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    PDF UM611864 275mA 52-pin UM611864 UM611864-11

    UM614256

    Abstract: HC 3102
    Text: UM614256 Seríes 2 5 6 K X 4 , 3.3V I/O High Speed CMOS SRAM Features • Single +5V power supply 3.3V I/O compatible All inputs and outputs directly TTL com patible Comm on I/O using three-state output Data retention voltage: 3V min. Available in 28-pin SOJ package


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    PDF UM614256 150mA 28-pin 576-bit UM614256S-15 UM614256S-20 28LSOJ HC 3102

    UM6114

    Abstract: SRAM 6114 UM 6114 611-4
    Text: 1IM Fi 7 =r : UM 6114 ^ IK X 4 CM OS SRAM Features • S in g le +5 v o lt p o w er su p p ly D ir e c t ly T T L co m p a tib le : A ll in p u ts and o u tp u ts ■ A c ce ss tim e : 9 0 ns m a x . C o m m o n I/O using three-state o u tp u t D ata re te n tio n vo ltag e: 2 V (m in .)


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    PDF

    UM621024B

    Abstract: UM621024 um621024bm-70l
    Text: UM621024B Seríes 128K X 8 CMOS SRAM Features • Single +5V power supply ■ Access times: 55/70 ns max. ■ Current: Low power version: Operating: 70mA Standby: 100(iA Very low power version: Operating: 70mA Standby: 25 (¿A * Full static operation, no clock or refreshing


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    PDF UM621024B 32-pin 576bit UM621024BV-70L UM621024BV-70LL UM621024BVR-70L UM621024BVR-70LL UM621024B-10L UM621024 um621024bm-70l

    Untitled

    Abstract: No abstract text available
    Text: o U N IT R O D E _ bq2201 SRAM Nonvolatile Controller Unit Features General Description >• Power monitoring and switching for 3-volt battery-backup applica­ tions The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard


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    PDF bq2201 bq2201 TD220103 16-pin

    UM61M512K-15

    Abstract: UM61M512K15 UM61M512 um61M512K UM61M512-20 um61m UM61M51
    Text: UM61M512 Seríes 64KX 8, 3.3V I/O High Speed CMOS SRAM Features • Single +5V power supply * Access times: 15/20 ns max. ■ Current: Operating: 160mA (max.) Standby. 10mA (max.) ■ Full static operation, no clock or refreshing required ■ 3.3V I/O com patible


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    PDF UM61M512 160mA 32-pin 288bit UM61M512K-15 UM61M512K-20 UM61M512K15 um61M512K UM61M512-20 um61m UM61M51

    Untitled

    Abstract: No abstract text available
    Text: OJ bq4014/bq4014Y UNITRODE- 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-protection dur­ ing power-up/power-down cycles >• Industry-standard 32-pin 256K x 8 pinout >• Conventional SEAM operation; unlimited write cycles


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    PDF bq4014/bq4014Y 256Kx8 bq4014 152-bit 256Kx

    TC551001BPL-10

    Abstract: TC551001BPL-7
    Text: INTEGRATED TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551001 BPL / BFL / BFTL / BTRL - 70 TC551001 BPL / BFL / BFTL / BTRL - 85 TC551001 BPL/ BFL/ BFTL/ BTRL-10 DATA SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory SRAM organized as


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    PDF TC551001 BTRL-10 072-WORD TC551001BPL/BFL/BFTL/BTRL 576-bit TSOP32-P-0820) TC551001BPL-- TC551001BPL-10 TC551001BPL-7

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1403J/FT-15.-20 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 1-BIT/1,048,576-WORD BY 4-BIT C M O S STATIC R A M DESCRIPTION The TC55V1403J/FT is a 4,194,304-bit high speed static random access memory SRAM , it is possible to


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    PDF TC55V1403J/FT-15 304-WORD 576-WORD TC55V1403J/FT 304-bit SOJ32-P-400-1 PII32-P-400-1 35MAX

    UM61L3232AF-7

    Abstract: UM61L3232A um61 UM61L UM61L3232 UM61L3232AF-8 UM61-l-3232af
    Text: UM61L3232A Series PRELIMINARY 32K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output Features Fast access times: 5/6/7/8 ns Single +3.3V+10% or +3.3V-5% power supply Synchronous burst function Individual Byte W rite control and Global Write


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    PDF UM61L3232A 100-pin 10jiA. UM61L3232AF-5 UM61L3232AE-5 UM61L3232AF-6 UM61L3232AE-6 UM61L3232AF-7 UM61L3232AE-7 um61 UM61L UM61L3232 UM61L3232AF-8 UM61-l-3232af

    alarm clock IC

    Abstract: bq4842y
    Text: bq4842Y RTC Module with 128Kx8 SRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, CPU supervisor, crystal, pow er-fail control circuit, and battery The bq4842Y RTC Module is a non­ volatile 1,048,576-bit SRAM organ­ ized as 131,072 words by 8 bits with


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    PDF bq4842Y 128Kx8 10-year 576-bit-up alarm clock IC

    8251a usart interface from z80

    Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
    Text: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn


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    PDF L4E75BS 80C42H D043fl23 8251a usart interface from z80 UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4