54-PIN
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4416016 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT Description The µPD4416016 is a high speed, low power, 16,777,216 bits 1,048,576 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416016 is packaged in a 54-pin plastic TSOP (II).
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PD4416016
16M-BIT
16-BIT
PD4416016
54-pin
I/O16)
PD4416016G5-A15-9JF
PD4416016G5-A17-9JF
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M1407
Abstract: 54-PIN
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4416004 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT Description The µPD4416004 is a high speed, low power, 16,777,216 bits 4,194,304 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416004 is packaged in a 54-PIN PLASTIC TSOP (II).
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PD4416004
16M-BIT
PD4416004
54-PIN
PD4416004G5-A15-9JF
PD4416004G5-A17-9JF
M1407
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PDF
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54-PIN
Abstract: uPD4416016G5-A15-9JF-A
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4416016 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT Description The μPD4416016 is a high speed, low power, 16,777,216 bits 1,048,576 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD4416016 is packaged in a 54-pin plastic TSOP (II).
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Original
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PD4416016
16M-BIT
16-BIT
PD4416016
54-pin
I/O16)
PD4416016G5-A15-9JF-A
PD4416016G5-A15-9JF
uPD4416016G5-A15-9JF-A
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PDF
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M1407
Abstract: 54-PIN
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The µPD4416001 is a high speed, low power, 16,777,216 bits 16,777,216 words by 1 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416001 is packaged in a 54-PIN PLASTIC TSOP (II).
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PD4416001
16M-BIT
16M-WORD
PD4416001
54-PIN
PD4416001G5-A15-9JF
PD4416001G5-A17-9JF
M1407
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4416016 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT Description The μPD4416016 is a high speed, low power, 16,777,216 bits 1,048,576 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD4416016 is packaged in a 54-pin plastic TSOP (II).
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Original
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PD4416016
16M-BIT
16-BIT
PD4416016
54-pin
I/O16)
PD4416016G5-A15-9JF
PD4416016G5-A17-9JF
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PDF
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54-PIN
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4416008 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The µPD4416008 is a high speed, low power, 16,777,216 bits 2,097,152 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416008 is packaged in a 54-PIN PLASTIC TSOP (II) (10.16 mm (400)
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PD4416008
16M-BIT
PD4416008
54-PIN
PD4416008G5-A15-9JF
PD4416008G5-A17-9JF
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PDF
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54-PIN
Abstract: uPD4416008G5-A15-9JF-A M1408
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4416008 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The μPD4416008 is a high speed, low power, 16,777,216 bits 2,097,152 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD4416008 is packaged in a 54-PIN PLASTIC TSOP (II) (10.16 mm (400)
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Original
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PD4416008
16M-BIT
PD4416008
54-PIN
PD4416008G5-A15-9JF-A
PD4416008G5-A15-9JF
uPD4416008G5-A15-9JF-A
M1408
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4416008 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The μPD4416008 is a high speed, low power, 16,777,216 bits 2,097,152 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD4416008 is packaged in a 54-PIN PLASTIC TSOP (II) (10.16 mm (400)
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Original
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PD4416008
16M-BIT
PD4416008
54-PIN
PD4416008G5-A15-9JF
PD4416008G5-A17-9JF
PD4416008G5-A15-9JFntrol
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PDF
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Untitled
Abstract: No abstract text available
Text: SRAM PRELIMINARY AS5LC2M8 2M x 8 HIGH-SPEED CMOS STATIC RAM PIN CONFIGURATIONS 44-pin TSOPII DGC & DGCR FEATURES • High-speed access time: 10, 15 & 20ns • Available in Mil-Temp, Enhanced & Industrial Ranges • High-performance, low-power CMOS process
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44-pin
-40oC
105oC
-55oC
125oC
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27934
Abstract: No abstract text available
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
CY14B101LA)
CY14B101NA)
32-pin
44-/54-pin
48-pin
27934
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PDF
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CY14B101LA-SZ25XI
Abstract: CY14B101LA-SZ45XI CY14B101LA-SP25XIT
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
CY14B101LA)
CY14B101NA)
32-pin
44-/54-pin
48-pin
CY14B101LA-SZ25XI
CY14B101LA-SZ45XI
CY14B101LA-SP25XIT
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PDF
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Untitled
Abstract: No abstract text available
Text: EDI9F37512C 512Kx37 SRAM Module 512Kx37 Static RAM CMOS, High Speed Module Features The EDI9F37512C is a high speed 20 megabit Static RAM module organized as 512K words x 37 bits. This module is constructed from five 512Kx8 Static RAMs in TSOP packages on an epoxy laminate FR4 board.
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EDI9F37512C
512Kx37
EDI9F37512C
512Kx8
EDI9F37512C45MMC
EDI9F37512C55MMC
01581USA
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PDF
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IS43LR32640
Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and
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i1-44-42218428
IS43LR32640
is61wv5128
Product Selector Guide
is42s86400
IS46R16160B
IS25LD010
IS25LD025
IS25LQ
IS62WV5128DALL
BGA 168
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PDF
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m63044
Abstract: m64076 M64026 m7108 M64073 M63062 M64021 M71081 M63006 M71064
Text: RELIABILITY MONITOR SUMMARY QUARTERLY SUMMARY, QUARTER 1, 1997 April 17, 1997 PERFORMED PER THE REQUIREMENTS OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION. CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY STANDARD STRESS TEST DESCRIPTIONS Test HTOL HTOL2
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CY7C374I-JC
M64016
FLASH-FL28D
M71081
m63044
m64076
M64026
m7108
M64073
M63062
M64021
M63006
M71064
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PDF
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IC1210-m128LQ
Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Text: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are
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Untitled
Abstract: No abstract text available
Text: CY14B104LA, CY14B104NA 4-Mbit 512 K x 8/256 K × 16 nvSRAM 4-Mbit (512 K × 8/256 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)
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CY14B104LA,
CY14B104NA
CY14B104LA)
CY14B104NA)
44-/54-pin
48-ball
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PDF
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TSOP 54 Package
Abstract: TSOP 48 thermal resistance TSOP 54 PIN TSOP 54 Package used in where TSOP II 54 TSOP II 54 Package
Text: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Feature Functional Description • 15 ns, 25 ns, and 45 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor
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CY14B104L/CY14B104N
8/256K
CY14B104L/CY14B104N
to10ns
to15ns
TSOP 54 Package
TSOP 48 thermal resistance
TSOP 54 PIN
TSOP 54 Package used in where
TSOP II 54
TSOP II 54 Package
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PDF
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Untitled
Abstract: No abstract text available
Text: CY14B104LA, CY14B104NA 4-Mbit 512 K x 8/256 K × 16 nvSRAM 4-Mbit (512 K × 8/256 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)
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Original
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CY14B104LA,
CY14B104NA
CY14B104LA)
CY14B104NA)
44-/54-pin
48-ball
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PDF
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Untitled
Abstract: No abstract text available
Text: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)
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CY14B108L
CY14B108N
CY14B108L)
CY14B108N)
44-/54-pin
48-ball
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PDF
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SM2603
Abstract: No abstract text available
Text: 64Mbit - Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Product Brief Features • 100% Pin Compatible with SDRAM • 100% Function and Timing Compatible with JEDEC standard SDRAM • Integrated 16Kbit SRAM Row Cache • Four Bank Architecture • Synchronous Operation up to 166MHz
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64Mbit
4Mx16
16Kbit
166MHz
SM2603T-6
SM2604T-6
SM2603T-7
SM2604T-7
SM2603T-10
SM2604T-10
SM2603
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PDF
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Untitled
Abstract: No abstract text available
Text: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)
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CY14B108L
CY14B108N
CY14B108L)
CY14B108N)
44-/54-pin
48-ball
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PDF
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M7401
Abstract: m74010 m7402 M74050 M74040 M74064 m80129 hyundai 9750 9745-1 VIC068A cy7c199zi
Text: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 1, 1998 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Marc Hartranft Reliability Manager CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT
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CY7C1334-AC
M7401
m74010
m7402
M74050
M74040
M74064
m80129
hyundai 9750 9745-1
VIC068A
cy7c199zi
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PDF
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"32K x 32" SRAM
Abstract: DPS32KX32Y5
Text: DENSE-PAC 1 Megabit High Speed SRAM /H - ~ D c n S tiS H/gft Density Memory Device m icrosystem s dps32KX32Y5 PRELIMINARY DESCRIPTION: The DPS32KX32Y5 a 32K x 32 SRAM module the utilize the new and innovative space saving TSOP stacking technology. The module is constructed of
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OCR Scan
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DPS32KX32Y5
DPS32KX32Y5
128Kx8
30A192-06
"32K x 32" SRAM
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T5LC 256K 16D 4 256K X 16 SRAM SRAM 256K x 16 SRAM 3.3V OPERATION WITH OUTPUT ENABLE FEATURES • High speed: 12,15, 20, 25 and 35ns • M ultiple center pow er and ground pins for im proved noise immunity • Single +3.3V ±0.3V pow er supply • Easy memory expansion w ith chip enable CE and
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OCR Scan
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54-Pin
TSIC2S6K1604
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PDF
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