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    SRAM 5V 512K X 8 Search Results

    SRAM 5V 512K X 8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27LS07PC Rochester Electronics LLC 27LS07 - Standard SRAM, 16X4 Visit Rochester Electronics LLC Buy
    CY7C167A-35PC Rochester Electronics LLC CY7C167A - CMOS SRAM Visit Rochester Electronics LLC Buy
    MD27512-25/B Rochester Electronics LLC 27512 - 512K (64K x 8) EPROM Visit Rochester Electronics LLC Buy
    D27512-25 Rochester Electronics LLC 27512 - 512K (64K x 8) EPROM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC HM3-6504 - Standard SRAM, 4KX1, 220ns, CMOS Visit Rochester Electronics LLC Buy

    SRAM 5V 512K X 8 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    68S16000

    Abstract: AB-020
    Text: 512K x 32 SRAM MODULE PUMA 68S16000/AB-020/025/35/45 Issue 5.0 : May 2001 • User Configurable as 8 / 16 / 32 bit wide output. • Operating Power : • Standby Power : CMOS • Single 5V±10% Power supply. 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM CS1


    Original     		68S16000/AB-020/025/35/45 220mW 68S16000 16Mbit 200pcs 183OC 225OC 219OC AB-020 PDF

    Untitled

    Abstract: No abstract text available
    Text: LP614096-I Series 512K X 8 BIT 5V HIGH SPEED CMOS SRAM Preliminary Document Title 512K X 8 BIT 5V HIGH SPEED CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue January 7, 2009 Preliminary January, 2009, Version 0.0


    Original     		LP614096-I LP614096-10IF 36-pin 44-pin LP614096-25LIF PDF

    GVT72512A8

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION GALVANTECH, INC. GVT72512A8 REVOLUTIONARY PINOUT 512K X 8 ASYNCHRONOUS SRAM 512K x 8 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT72512A8 is organized as a 524,288 x 8 SRAM


    Original     		GVT72512A8 GVT72512A8 72512A8 PDF

    GVT72512A8

    Abstract: No abstract text available
    Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72512A8 REVOLUTIONARY PINOUT 512K X 8 512K x 8 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT72512A8 is organized as a 524,288 x 8 SRAM using a four-transistor memory cell with a high performance,


    Original     		GVT72512A8 GVT72512A8 72512A8 PDF

    Untitled

    Abstract: No abstract text available
    Text: M68AF511AL 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O


    Original     		M68AF511AL TSOP32 PDF

    18OCT

    Abstract: No abstract text available
    Text: M68AF511AL 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O


    Original     		M68AF511AL TSOP32 18OCT PDF

    M68AF511AL

    Abstract: M68AF511AM SO32 TSOP32
    Text: M68AF511AL M68AF511AM 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O


    Original     		M68AF511AL M68AF511AM TSOP32 M68AF511AL, M68AF511AL M68AF511AM SO32 PDF

    Untitled

    Abstract: No abstract text available
    Text: M68AF511AL 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O


    Original     		M68AF511AL TSOP32 PDF

    M68AF511A

    Abstract: SO32 TSOP32
    Text: M68AF511A 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 4.5 to 5.5V 512K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O


    Original     		M68AF511A TSOP32 M68AF511A SO32 PDF

    M68AF511A

    Abstract: SO32 TSOP32
    Text: M68AF511A 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O


    Original     		M68AF511A TSOP32 M68AF511A SO32 PDF

    M68AF511AL

    Abstract: SO32 TSOP32
    Text: M68AF511AL 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O


    Original     		M68AF511AL TSOP32 M68AF511AL SO32 PDF

    ep 1387

    Abstract: No abstract text available
    Text: M68AF511A 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 4.5 to 5.5V 512K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O


    Original     		M68AF511A TSOP32 ep 1387 PDF

    HMS51232M4G

    Abstract: simm 72 pinout
    Text: HANBit HMS51232M4G SRAM MODULE 2Mbyte 512K x 32-Bit , 72PIN SIMM, 5V Part No. HMS51232M4G GENERAL DESCRIPTION The HMS51232M4GG is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4-printed circuit board.


    Original     		HMS51232M4G 32-Bit) 72PIN HMS51232M4GG x32-bit 72-pin, 51232M4G-10 32bit HMS51232M4G simm 72 pinout PDF

    D0-D31

    Abstract: No abstract text available
    Text: MP512S32JC 512K x 32 Fast SRAM PLCC Issue 1.1 December 2007 General Description Features The MP512S32JC device is a 512K x 32 SRAM module housed in a 68 Jleaded package which complies with the JEDEC 68 PLCC standard. Access times of 15, 20 or 25 ns are available. The 5V device is


    Original     		MP512S32JC MP512S32JC D0-D31 PDF

    HMS51232M4L

    Abstract: 72-pin simm
    Text: HANBit HMS51232M4L HAN SRAM MODULE 2Mbyte 512K x 32-Bit , BIT SIMM 5V LOW POWER, 72-Pin Part No. HMS51232M4L GENERAL DESCRIPTION The HMS51232M4L is a static random access memory (SRAM) module containing 524,288 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4printed circuit board.


    Original     		HMS51232M4L 32-Bit) 72-Pin HMS51232M4L x32-bit 72-pin, 32bit 72-pin simm PDF

    Untitled

    Abstract: No abstract text available
    Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL ■ YEAR 2000 COMPLIANT-CENTURY REGISTER ■ BCD CODED YEAR, MONTH, DAY, DATE,


    OCR Scan     		M48T513Y M48T513V PMLDIP36 48T513Y: 48T513V: iM48T513Y) M48T513Y, PMLDIP36 PDF

    as8sf384k32

    Abstract: Mixed Module
    Text: SRAM & FLASH Mixed Module AS8SF384K32 128K x 16 SRAM & 512K x 16 FLASH PIN ASSIGNMENT Top View SRAM / FLASH MEMORY ARRAY 68 Lead CQFP (QT) FEATURES NC A0 A1 A2 A3 A4 A5 FCS\1 GND FCS\2 SWE\1 A6 A7 A8 A9 A10 VCC • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH


    Original     		AS8SF384K32 000thout AS8SF384K32 AS8SF384K32QT-35/XT AS8SF384K32QT-35/MIL MIL-STD-883 -40oC Mixed Module PDF

    Untitled

    Abstract: No abstract text available
    Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS


    Original     		M48T513Y M48T513V M48T513Y: M48T513V: PDF

    D 4242

    Abstract: M48T35 M48T512V M48T512Y
    Text: M48T512Y M48T512V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		M48T512Y M48T512V M48T512Y: M48T512V: D 4242 M48T35 M48T512V M48T512Y PDF

    M48T201

    Abstract: M48T513V M48T513Y
    Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS


    Original     		M48T513Y M48T513V M48T513Y: M48T513V: M48T201 M48T513V M48T513Y PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 7. M48T512Y M48T512V SGS-THOMSON 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL « BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS


    OCR Scan     		M48T512Y M48T512V M48T512Y: M48T512V: M48T512Y) M48T512V) PMDIP32 A0-A18 M48T512Y, PDF

    Untitled

    Abstract: No abstract text available
    Text: SRAM & FLASH Mixed Module AS8SF384K32 128K x 16 SRAM & 512K x 16 FLASH PIN ASSIGNMENT Top View SRAM / FLASH MEMORY ARRAY 68 Lead CQFP (QT) NC A0 A1 A2 A3 A4 A5 FCS\1 GND FCS\2 SWE\1 A6 A7 A8 A9 A10 VCC FEATURES • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH


    Original     		AS8SF384K32 000thout AS8SF384K32 AS8SF384K32QT-35/XT AS8SF384K32QT-35/MIL MIL-STD-883 -40oC PDF

    AS8S512K32

    Abstract: No abstract text available
    Text: AUSTIN SEM ICONDUCTOR, INC. AS8S512K32 512K X 32 SRAM SRAM MODULE AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-94611 MIL-STD-883 PIN ASSIGNMENT Top View FEATURES • 68 Lead CQFP SMD 5962-94611 Pending Operation with single 5V supply High speed: 20, 25 and 35ns


    OCR Scan     		AS8S512K32 MIL-STD-883 512Kx32 84oC/w AS8S512K32 512Kx32 militK32 AS8S512K32Q PDF

    M48T201

    Abstract: M48T513V M48T513Y Backup output protect 36Pin-DIP
    Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS


    Original     		M48T513Y M48T513V M48T513Y: M48T513V: AI02307 A0-A18 M48T513Y) M48T513V) PMLDIP36 M48T201 M48T513V M48T513Y Backup output protect 36Pin-DIP PDF