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    SRAM 64KX8 Search Results

    SRAM 64KX8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    X28C512DM-15/B Rochester Electronics LLC X28C512 - EEPROM, 64KX8, Parallel, CMOS Visit Rochester Electronics LLC Buy
    X28C513JIZ-12 Rochester Electronics X28C513 - EEPROM, 64KX8, 5V, Parallel Visit Rochester Electronics Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    AM27C512-70JI Rochester Electronics LLC OTP ROM, 64KX8, 70ns, CMOS, PQCC32, LCC-32 Visit Rochester Electronics LLC Buy
    X28C512DM-15 Rochester Electronics LLC EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy

    SRAM 64KX8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024

    7133 A-1

    Abstract: AN-91 IDT7024 8K RAM 71421
    Text: THE MOST COMMONLY ASKED QUESTIONS ABOUT ASYNCHRONOUS DUAL-PORT SRAMS APPLICATION NOTE AN-91 By Mark Baumann and Cheryl Brennan What is a dual-port SRAM? A dual -port SRAM is exactly what it sounds like. It is a single static SRAM array accessed by two sets of address, data, and control signals.


    Original     		PDF AN-91 7133 A-1 AN-91 IDT7024 8K RAM 71421

    HY62U8512

    Abstract: HY62U8512LLST-I HY62U8512-I dec97 64Kx8bit
    Text: HY62U8512- I Series 64Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8512/HY62U8512-I is a high speed, low power and 512K bit CMOS SRAM organized as 64,000 words by 8bit. The HY62U8512 / HY62U8512-I uses high performance CMOS process technology and designed for high speed


    Original     		PDF HY62U8512- 64Kx8bit HY62U8512/HY62U8512-I HY62U8512 HY62U8512-I 32pin -100mA 100mA HY62U8512LLST-I dec97

    7134

    Abstract: DUAL-PORT STATIC RAM AN-91 IDT7024 low power asynchronous SRAM 64KX8 3.3V 1Kx8 static ram 71421
    Text: THE MOST COMMONLY ASKED QUESTIONS ABOUT ASYNCHRONOUS DUAL-PORT SRAMS APPLICATION NOTE AN-91 By Mark Baumann and Cheryl Brennan What is a dual-port SRAM? A dual -port SRAM is exactly what it sounds like. It is a single static SRAM array accessed by two sets of address, data, and control signals.


    Original     		PDF AN-91 7134 DUAL-PORT STATIC RAM AN-91 IDT7024 low power asynchronous SRAM 64KX8 3.3V 1Kx8 static ram 71421

    hy62u8512

    Abstract: No abstract text available
    Text: HY62U8512- I Series 64Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8512/HY62U8512-I is a high speed, low power and 512K bit CMOS SRAM organized as 65,536 words by 8bit. The HY62U8512 / HY62U8512-I uses high performance CMOS process technology and designed for high speed


    Original     		PDF HY62U8512- 64Kx8bit HY62U8512/HY62U8512-I HY62U8512 HY62U8512-I 32pin -100mA 100mA

    1N4004 M4

    Abstract: S20 k35 s10 K20 S20 K25 P155 P156 1N4148 HF88S05 P150 P151
    Text: Command Mode SRAM HF88S05 Preliminary Product Specification Product Name KB Doc. No. HF88S05.doc Command Mode SRAM KB Product. No. HF88S05 – Table of Contents – 1. General Description 2. Features


    Original     		PDF HF88S05 HF88S05 1N4148 1N4004 M4 S20 k35 s10 K20 S20 K25 P155 P156 1N4148 P150 P151

    Untitled

    Abstract: No abstract text available
    Text: A63L6364A Series 64K X 64 Bit Synchronous High Speed SRAM Preliminary With Burst Counter and Pipelined Data Output Document Title 64K X 64 Bit Synchronous High Speed SRAM With Burst Counter and Pipelined Data Output Revision History Rev. No. 0.0 PRELIMINARY


    Original     		PDF A63L6364A

    LQFP 128L

    Abstract: IO64
    Text: A63L6364 Series 64K X 64 Bit Synchronous High Speed SRAM With Burst Counter and Pipelined Data Output PRELIMINARY Document Title 64K X 64 Bit Synchronous High Speed SRAM With Burst Counter and Pipelined Data Output Revision History Rev. No. 0.0 0.1 History


    Original     		PDF A63L6364 128-pin LQFP 128L IO64

    Untitled

    Abstract: No abstract text available
    Text: A63G6364 Series 64K X 64 Bit Synchronous High Speed SRAM Preliminary With Burst Counter and Pipelined Data Output Document Title 64K X 64 Bit Synchronous High Speed SRAM With Burst Counter and Pipelined Data Output Revision History Rev. No. 0.0 0.1 History


    Original     		PDF A63G6364 160mA 250mA ZZ862

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC PRELIMINARY V63C31322048 64K X 32 CMOS SYNCHRONOUS BURST PIPELINED SRAM Features Functional Description • ■ ■ ■ ■ ■ ■ ■ ■ The V63C31322048 is a high-speed synchronous burst pipelined CMOS SRAM organized as 65,536 words by 32 bits that supports both i486/


    Original     		PDF V63C31322048 V63C31322048 i486/ 680X0/Power

    AS7C3512-20JC

    Abstract: AS7C3512-20PC AS7C3512-25JC AS7C3512-25PC
    Text: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 Low voltage 64K×8 CMOS SRAM Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • High speed - 20/25 ns address access time - 5/6 ns output enable access time • Very low power consumption


    Original     		PDF AS7C3512 32-pin 1-20015-A. AS7C3512 AS7C3512-20PC AS7C3512-20JC AS7C3512-25PC AS7C3512-25JC AS7C3512-20JC AS7C3512-20PC AS7C3512-25JC AS7C3512-25PC

    6116 RAM

    Abstract: 7217 up down counter ram 6116 256KB static RAM PY 88 74FST3390 7M1002 c 3198 c 3198 transistor dual-port RAM
    Text: Integrated Device Technology, Inc. As of 10/10/95 Page 1 Alpha-Numeric List of Products Doc ID Product Product Description Speeds Pkgs Temp Volt Avail 2760 10474 1KX4 CORNER POWER Bi SRAM, ECL-10K I/O 4ns C 5V Now 2759 10480 16KX1 Bi SRAM, ECL-10K I/O 4ns


    Original     		PDF ECL-10K 16KX1 64KX1 16KX4 64KX4 6116 RAM 7217 up down counter ram 6116 256KB static RAM PY 88 74FST3390 7M1002 c 3198 c 3198 transistor dual-port RAM

    AS7C3512-15PC

    Abstract: AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465
    Text: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 AS7C3512L Low voltage 64K×8 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • 5V tolerant I/O specification • High speed - 12/15/20/25/35 ns address access time


    Original     		PDF AS7C3512 AS7C3512L 32-pin AS7C3512-15PC AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465

    synchronous sram

    Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
    Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK


    OCR Scan     		PDF EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C synchronous sram 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832

    OEC97

    Abstract: No abstract text available
    Text: HY62U8512- I Series 64Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8512/HY62U8512-I is a high speed, low power and 512K bit CMOS SRAM organized as 65,536 words by 8bit. The HY62U8512 / HY62U8512-I uses high performance CMOS process technology and designed for high speed


    OCR Scan     		PDF HY62U8512- 64Kx8bit HY62U8512/HY62U8512-I HY62U8512 HY62U8512-I 32pin -100mA 100mA OEC97

    Untitled

    Abstract: No abstract text available
    Text: High-Performance 64Kx8 CMOS SRAM p i AS7C512 AS7C512L 64Kx8 CMOS SRAM Common I/O FEATURES Equal access and cycle times • Organization; 65,536 words x 8 bits • Highspeed • Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time


    OCR Scan     		PDF 64Kx8 AS7C512 AS7C512L 64Kx8 32-pin 7C256 7C1024 10Q3441

    AS7C3512-15PC

    Abstract: No abstract text available
    Text: High-Performance 64Kx8 3.3V CMOS SRAM PI AS7C3512 AS7C3512L PR E LIM IN A RY Low Voltage 64KxS CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply


    OCR Scan     		PDF 64Kx8 AS7C3512 AS7C3512L 64KxS 32-pin 00G0CH5 AS7C3512-15PC

    AS7C512-20JC

    Abstract: AS7C512-15pc AS7C512 10n12 AS7C512-12JC 7C256 AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20
    Text: High-Performance p i AS7C512 : AS7C512L CMOS SRAM 64Kx8 CMOS SRAM Common I/O FEATURES Organization; 65,536 words x 8 bits Equal access and cycle times High speed Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time TTL-compatible, three-state I/O


    OCR Scan     		PDF AS7C512 AS7C512L 64Kx8 32-pin 7C256 7C1024 AS7C512-20JC AS7C512-15pc AS7C512 10n12 AS7C512-12JC AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT58LC64K32/36G1 64K X 32/36 SYNCBURST SRAM MICRON I 11CHNOLOr.Y INC SYNCHRONOUS SRAM 64K x 32/36 SRAM +3.3V SU PPLY, +2.5V I/O, P IPELIN ED , BU R ST C O U N TE R AN D S IN G LE -C Y C LE D E S E LE C T FEATURES • • • • • • • • •


    OCR Scan     		PDF MT58LC64K32/36G1 11CHNOLOr 100-Pin MT50LC64K323OG1 bH154T G023G2b

    CAW-18

    Abstract: megatron
    Text: High-Performance 64Kx8 3.3V CMOS SRAM PI ^ ¿ 9 ^ AS7C3512 AS7C3512L P R E L IM IN A R Y Low Voltage 64Kx8 CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply


    OCR Scan     		PDF AS7C3512 64Kx8 AS7C3512L 32Jose, CAW-18 megatron

    Untitled

    Abstract: No abstract text available
    Text: High Performance 64KX8 CMOS SRAM AS7C512 AS7C512L 64KX8 CMOS SRAM Features • Organization: 6 5 ,5 3 6 w ords x 8 bits • H igh speed - 1 2 / 1 5 / 2 0 / 2 5 / 3 5 ns address access time - 3 / 4 / S / 6 / 8 ns output enable access tim e • Low pow er consum ption


    OCR Scan     		PDF 64KX8 AS7C512 AS7C512L 64KX8 0DDD473

    sram 16kx8

    Abstract: No abstract text available
    Text: P U M A 11 Issue 1.1: October 1988 molate ADVANCED PRODUCT INFORMATION Mosaic Sem iconductor Inc Pinned Uncommited Memory Array Pin Definition Features PGA allowing ASIC combinations of SRAM, EEPROM and UV EPROM Maximum total memory size of 128k x 8 SRAM/EEPROM


    OCR Scan     		PDF MIL-STD-883C A14/VPMAI5 AO-15 sram 16kx8

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MICRON * 64K MT58LC64K32/36D8 32/36 SYNCBURST SRAM 64K x 32/36 SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 4.5 ,5 ,6 ,7 ,8 and 9ns


    OCR Scan     		PDF MT58LC64K32/36D8 160-PIN