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    SRAM PULL DOWN Search Results

    SRAM PULL DOWN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    74CBTLV16292PAG8 Renesas Electronics Corporation Low-Voltage 12-Bit 1:2 Mux / Demux Bus Switch with Internal Pull Down Resistors Visit Renesas Electronics Corporation

    SRAM PULL DOWN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 77V012 Frequently Asked Questions 1. Can I leave the SRAM interface signals float if I am only using the 77V012 for DPI to UTOPIA conversion and do not have a SRAM connected to it? We recommend using weak pull up/down resistors 10K ohms on the non reset configuration


    Original     		77V012 77V012. 77V012? X25020 20MHz 20x10 PDF

    6502 CPU

    Abstract: WT65F1 42-pip
    Text: GENERAL DESCRIPTION The WT65F1 is single chip Micro-controller for Universal Serial Bus USB keyboard applications, it includes a 8-bits 6502 CPU core, 256 bytes SRAM, 8K Bytes FLASH MEMORY, 32-36 Programmable I/O with build in pull up resistors and interrupt capability (8 with high drive capability up to 14mA), it implement an USB Keyboard (low speed


    Original     		WT65F1 6502 CPU 42-pip PDF

    CY22E016L

    Abstract: CY22E016L-SZ25XC CY22E016L-SZ25XCT CY22E016L-SZ35XCT BUT14
    Text: CY22E016L 16 Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Hands off automatic STORE on power down with external 68 F capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by hardware or AutoStore on power down


    Original     		CY22E016L CY22E016L CY22E016L-SZ25XC CY22E016L-SZ25XCT CY22E016L-SZ35XCT BUT14 PDF

    CY22E016L

    Abstract: CY22E016L-SZ25XC CY22E016L-SZ25XCT CY22E016L-SZ35XCT BUT14
    Text: CY22E016L 16 Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns access times ■ Hands off automatic STORE on power down with external 68 F capacitor ■ STORE to QuantumTrap non-volatile elements is initiated by hardware or AutoStore on power down


    Original     		CY22E016L CY22E016L CY22E016L-SZ25XC CY22E016L-SZ25XCT CY22E016L-SZ35XCT BUT14 PDF

    CY14E064L

    Abstract: CY14E064L-SZ25XC CY14E064L-SZ25XCT CY14E064L-SZ25XI CY14E064L-SZ25XIT 963W
    Text: CY14E064L 64 Kbit 8K x 8 nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Hands off automatic STORE on power down with external 68 mF capacitor ■ STORE to QuantumTrap non-volatile elements is initiated by software, hardware or AutoStore on power down


    Original     		CY14E064L CY14E064L CY14E064L-SZ25XC CY14E064L-SZ25XCT CY14E064L-SZ25XI CY14E064L-SZ25XIT 963W PDF

    06543

    Abstract: CY14E064L CY14E064L-SZ25XC CY14E064L-SZ25XCT CY14E064L-SZ25XI CY14E064L-SZ25XIT
    Text: CY14E064L 64 Kbit 8K x 8 nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Hands off automatic STORE on power down with external 68 mF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by software, hardware, or AutoStore™ on power down


    Original     		CY14E064L CY14E064L 06543 CY14E064L-SZ25XC CY14E064L-SZ25XCT CY14E064L-SZ25XI CY14E064L-SZ25XIT PDF

    CY14E256L

    Abstract: CY14E256L-SZ25XC CY14E256L-SZ25XCT CY14E256L-SZ25XI CY14E256L-SZ25XIT CY14E256L-SZ35XCT
    Text: CY14E256L 256 Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Hands off Automatic STORE on power down with external 68 F capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by software, hardware, or AutoStore™ on power down


    Original     		CY14E256L CY14E256L CY14E256L-SZ25XC CY14E256L-SZ25XCT CY14E256L-SZ25XI CY14E256L-SZ25XIT CY14E256L-SZ35XCT PDF

    32x512

    Abstract: STK22C48 STK22C48-NF25 STK22C48-NF25ITR STK22C48-SF25ITR BUT14
    Text: STK22C48 16 Kbit 2K x 8 AutoStore nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Hands off automatic STORE on power down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by software, hardware, or AutoStore™ on power down


    Original     		STK22C48 STK22C48 32x512 STK22C48-NF25 STK22C48-NF25ITR STK22C48-SF25ITR BUT14 PDF

    CY14E256L

    Abstract: CY14E256L-SZ25XC CY14E256L-SZ25XCT CY14E256L-SZ25XI CY14E256L-SZ25XIT STK14C88
    Text: CY14E256L 256 Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns Access Times ■ Pin Compatible with STK14C88 ■ Hands Off Automatic STORE on Power Down with External 68 µF Capacitor ■ STORE to QuantumTrap Nonvolatile Elements is Initiated by


    Original     		CY14E256L STK14C88 32-pin CY14E256L CY14E256L-SZ25XC CY14E256L-SZ25XCT CY14E256L-SZ25XI CY14E256L-SZ25XIT STK14C88 PDF

    STK14C88-5K45M

    Abstract: STK14C88 STK14C88-5C35M STK14C88-5C45M STK14C88-5K35M STK14C88-5L35M
    Text: STK14C88-5 256 Kbit 32K x 8 AutoStore nvSRAM Features Functional Description • 35 ns and 45 ns access times ■ Hands off automatic STORE on power down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by software, hardware, or AutoStore™ on power down


    Original     		STK14C88-5 STK14C88-5 STK14C88-5K45M STK14C88 STK14C88-5C35M STK14C88-5C45M STK14C88-5K35M STK14C88-5L35M PDF

    STK12C68

    Abstract: STK12C68-PF25 STK12C68-SF25 STK12C68-WF25 STK12C68-SF25TR stk12c68-sf45i STK12C68-WF45I
    Text: STK12C68 64 Kbit 8K x 8 AutoStore nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Hands off automatic STORE on power down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by


    Original     		STK12C68 STK12C68 STK12C68-PF25 STK12C68-SF25 STK12C68-WF25 STK12C68-SF25TR stk12c68-sf45i STK12C68-WF45I PDF

    STK12C68

    Abstract: STK12C68-5C35M stk12c68-5c55m package dimensions STK12C68-5K35M STK12C68-5L35M
    Text: STK12C68-5 SMD5962-94599 64 Kbit (8K x 8) AutoStore nvSRAM Features Functional Description • 35 ns and 55 ns access times ■ Hands off automatic STORE on power down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated


    Original     		STK12C68-5 SMD5962-94599) STK12C68-5 STK12C68 STK12C68-5C35M stk12c68-5c55m package dimensions STK12C68-5K35M STK12C68-5L35M PDF

    CY14E256L

    Abstract: CY14E256L-SZ25XC CY14E256L-SZ25XCT CY14E256L-SZ25XI CY14E256L-SZ25XIT STK14C88
    Text: CY14E256L 256 Kbit 32K x 8 nvSRAM Functional Description • 25 ns, 35 ns, and 45 ns Access Times ■ Pin Compatible with STK14C88 ■ Hands Off Automatic STORE on Power Down with External 68 µF Capacitor ■ STORE to QuantumTrap Nonvolatile Elements is Initiated by


    Original     		CY14E256L STK14C88 CY14E256L CY14E256L-SZ25XC CY14E256L-SZ25XCT CY14E256L-SZ25XI CY14E256L-SZ25XIT STK14C88 PDF

    STK14C88-5C45M

    Abstract: No abstract text available
    Text:  STK14C88-5 256 Kbit 32K x 8 AutoStore nvSRAM Features Functional Description • 35 ns and 45 ns access times ■ Hands off automatic STORE on power down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by


    Original     		STK14C88-5 STK14C88-5 STK14C88-5C45M PDF

    Untitled

    Abstract: No abstract text available
    Text: CY14V104LA CY14V104NA 4-Mbit 512 K x 8 / 256 K x 16 nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 512 K x 8 (CY14V104LA) or 256 K x 16 (CY14V104NA) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14V104LA CY14V104NA CY14V104LA/CY14V104NA PDF

    Untitled

    Abstract: No abstract text available
    Text: CY14B108L CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM 8 Mbit (1024K x 8/512K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B108L CY14B108N 1024K 8/512K CY14B108L/CY14B108N PDF

    Untitled

    Abstract: No abstract text available
    Text: IlM l DATA SHEET_ HM 65262 16 Kx 1 VERY LOW POWER CMOS SRAM FEATURES . 300 MILS WIDTH PACKAGE . TTL COMPATIBLE INPUTS AND OUTPUTS . ASYNCHRONOUS . SINGLE 5 VOLT SUPPLY . EQUAL CYCLE AND ACCESS TIME . GATED INPUTS : NO PULL-UP/DOWN


    OCR Scan     		65262/Rbv PDF

    Untitled

    Abstract: No abstract text available
    Text: Preview M ill March 1994 M 65601 DATA SHEET 1Mx 1 ULTIMATE CMOS SRAM FEATURES . . . . 400 MILS WIDTH PACKAGE . TTL COMPATIBLE INPUTS AND OUTPUTS . ASYNCHRONOUS . SINGLE 5 VOLT SUPPLY . EQUAL CYCLE AND ACCESS TIME . GATED INPUTS: NO PULL-UP/DOWN RESISTORS ARE REQUIRED


    OCR Scan     		65601/Rev PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1994 L 65664 DATA SHEET 8 K x 8 / 3.3 VOLTS ULTIMATE CMOS SRAM FEATURES . WIDE TEMPERATURE RANGE: - 55 °C TO +125 °C . ASYNCHRONOUS . EQUAL CYCLE AND ACCESS TIME . GATED INPUTS: NO PULL-UP/DOWN RESISTORS ARE REQUIRED . SINGLE SUPPLY 3.3 ± 0.3 VOLTS


    OCR Scan     		L65664 65664/Rev PDF

    F14-F15

    Abstract: HM65664 Fn 1016 MATRA MHS 28 pins ML-ND L1 Z.35 ha 1452 4c1ej
    Text: Sflbfl4 5 b OGGITM? 323 •M M HS T '? £ ~ z 3 ~ / z _ January 1991 MATRA M H S HM 65664 HI-REL DATA SHEET 8kx8 ULTIMATE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPLLY EQUAL CYCLE AND ACCESS TIME GATED INPUTS : NO PULL-UP/DOWN


    OCR Scan     		5flbfl45b F14-F15 HM65664 Fn 1016 MATRA MHS 28 pins ML-ND L1 Z.35 ha 1452 4c1ej PDF

    Untitled

    Abstract: No abstract text available
    Text: T'?£~z3~/z_ Sflbfl 4 5 b OGGITM? 323 • M M H S January 1991 MATRA M H S HM 65664 HI-REL DATA SHEET 8kx8 ULTIMATE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPLLY EQUAL CYCLE AND ACCESS TIME GATED INPUTS : NO PULL-UP/DOWN


    OCR Scan     		PDF

    RY 485 ESA

    Abstract: No abstract text available
    Text: M ^E 5ôbû45b T> DDDn27 535 • ■ flMHS T ^ Ù -Z S -O January 1991 HM 65687 HI-REL DATA SHEET 64 k X 1 ULTIMATE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME GATED INPUTS : NO PULL-UP/DOWN


    OCR Scan     		DDDn27 RY 485 ESA PDF

    HM65664

    Abstract: No abstract text available
    Text: 4R E 5ôf c . ûM5b D QDD1D71 ^Q^ •MflHS Septem ber 1990 MAT RA M H S HM 65664 DATA SHEET 8 Kx8 ULTIMATE CMOS SRAM FEATURES 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME GATED INPUTS : NO PULL-UP/DOWN


    OCR Scan     		QDD1D71 25V35/55 HM65664 PDF

    A5 GNA

    Abstract: hm65664 HM-65664 65664 HM 65664 65664A
    Text: 4R E 5ôf c . ûM5b D QDD1D71 ^Q^ •MflHS Septem ber 1990 MAT RA M H S HM 65664 DATA SHEET 8 Kx8 ULTIMATE CMOS SRAM FEATURES 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME GATED INPUTS : NO PULL-UP/DOWN


    OCR Scan     		QDD1D71 25V35/55 A5 GNA hm65664 HM-65664 65664 HM 65664 65664A PDF