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    SRAM SHEET SAMSUNG Search Results

    SRAM SHEET SAMSUNG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27LS07PC Rochester Electronics LLC 27LS07 - Standard SRAM, 16X4 Visit Rochester Electronics LLC Buy
    CY7C167A-35PC Rochester Electronics LLC CY7C167A - CMOS SRAM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC HM3-6504 - Standard SRAM, 4KX1, 220ns, CMOS Visit Rochester Electronics LLC Buy
    HM4-6504B-9 Rochester Electronics LLC HM4-6504 - Standard SRAM, 4KX1, 220ns, CMOS Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC 2114A - 1K X 4 SRAM Visit Rochester Electronics LLC Buy

    SRAM SHEET SAMSUNG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SRAM sheet samsung

    Abstract: K6R4016VIC ISAS512K16LTD 256K Synchronous DRAM samsung
    Text: Data Sheet Part No. ISAS512K16LTD Irvine Sensors Corporation Microelectronics Products Division 8Mbit 512K x 16 SRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		ISAS512K16LTD I/O16 I/O15 I/O14 I/O13 I/O12 I/O11 I/O10 SRAM sheet samsung K6R4016VIC ISAS512K16LTD 256K Synchronous DRAM samsung PDF

    uPD44165182AF5-E50-EQ2-A

    Abstract: uPD44165182AF5-E40-EQ2 upd44165362a
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082A, 44165092A, 44165182A, 44165362A 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082A is a 2,097,152-word by 8-bit, the µPD44165092A is a 2,097,152-word by 9-bit, the µPD44165182A


    Original     		PD44165082A, 4165092A, 4165182A, 4165362A 18M-BIT PD44165082A 152-word PD44165092A PD44165182A uPD44165182AF5-E50-EQ2-A uPD44165182AF5-E40-EQ2 upd44165362a PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084A, 44165094A, 44165184A, 44165364A 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084A is a 2,097,152-word by 8-bit, the µPD44165094A is a 2,097,152-word by 9-bit, the µPD44165184A


    Original     		PD44165084A, 4165094A, 4165184A, 4165364A 18M-BIT PD44165084A 152-word PD44165094A PD44165184A PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44645082, 44645092, 44645182, 44645362 72M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44645082 is a 8,388,608-word by 8-bit, the µPD44645092 is a 8,388,608-word by 9-bit, the µPD44645182 is a


    Original     		PD44645082, 72M-BIT PD44645082 608-word PD44645092 PD44645182 304-word 18-bit PD44645362 PDF

    UPD443

    Abstract: UPD44325362F5-E50-EQ2
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44325082, 44325092, 44325182, 44325362 36M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44325082 is a 4,194,304-word by 8-bit, the µPD44325092 is a 4,194,304-word by 9-bit, the µPD44325182 is a


    Original     		PD44325082, 36M-BIT PD44325082 304-word PD44325092 PD44325182 152-word 18-bit PD44325362 UPD443 UPD44325362F5-E50-EQ2 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM64V1003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    OCR Scan     		KM64V1003B 256Kx4 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM64V1003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    OCR Scan     		KM64V1003B 256Kx4 8/10/12ns 150/140/130mA 150/145/140mA 32-SOJ-400 PDF

    K6E0808C1C

    Abstract: K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C
    Text: PRELIMINARY K6E0808C1C-C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.


    Original     		K6E0808C1C-C 32Kx8 12/15/20ns 8/10ns 8/10/10ns 7/10ns 28-TSOP1-0813 K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C PDF

    UPD4464

    Abstract: d1110
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44645084, 44645094, 44645184, 44645364 72M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44645084 is a 8,388,608-word by 8-bit, the µPD44645094 is a 8,388,608-word by 9-bit, the µPD44645184 is a


    Original     		PD44645084, 72M-BIT PD44645084 608-word PD44645094 PD44645184 304-word 18-bit PD44645364 UPD4464 d1110 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM K6E0808V1C-C Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Jun. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.


    Original     		K6E0808V1C-C 32Kx8 28-TSOP1 28-TSOP1-0813 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    OCR Scan     		KM641003B 256Kx4 32-SOJ-400 PDF

    UPD443

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44325084, 44325094, 44325184, 44325364 36M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44325084 is a 4,194,304-word by 8-bit, the µPD44325094 is a 4,194,304-word by 9-bit, the µPD44325184 is a


    Original     		PD44325084, 36M-BIT PD44325084 304-word PD44325094 PD44325184 152-word 18-bit PD44325364 UPD443 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY K6R1004V1A-C CMOS SRAM Document Title 256Kx4 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Revision History Rev . No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0 Release to Preliminary Data Sheet.


    Original     		K6R1004V1A-C 256Kx4 12/15/17/20ns 32-SOJ-400 PDF

    K6R1004C1A

    Abstract: K6R1004C1A-12 K6R1004C1A-15 K6R1004C1A-20
    Text: PRELIMINARY K6R1004C1A-C CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Apr. 22th, 1995 Preliminary Rev. 1.0 Release to final Data Sheet.


    Original     		K6R1004C1A-C 256Kx4 12/15/17/20ns 200/190/180/170mA 150/145/145/140mA 32-SOJ-400 K6R1004C1A K6R1004C1A-12 K6R1004C1A-15 K6R1004C1A-20 PDF

    KM64V1003C-12

    Abstract: KM64V1003C-15 KM64V1003C-20
    Text: KM64V1003C CMOS SRAM Document Title 256Kx4 Bit with OE High Speed CMOS Static RAM(3.3V Operating) Revision History Rev.No. History Rev. 0.0 Initial Draft Aug. 5. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet 1. Delete Preliminary 2. Relex DC characteristics


    Original     		KM64V1003C 256Kx4 32-SOJ-400 KM64V1003C-12 KM64V1003C-15 KM64V1003C-20 PDF

    zo 107 MA

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44645082, 44645092, 44645182, 44645362 72M-BIT QDRTM II SRAM 2-WORD BURST OPERATION Description The μPD44645082 is a 8,388,608-word by 8-bit, the μPD44645092 is a 8,388,608-word by 9-bit, the μPD44645182 is a


    Original     		PD44645082, 72M-BIT PD44645082 608-word PD44645092 PD44645182 304-word 18-bit PD44645362 zo 107 MA PDF

    K6E0804C1C-C

    Abstract: SRAM sheet samsung
    Text: PRELIMINARY CMOS SRAM K6E0804C1C-C Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.


    Original     		K6E0804C1C-C 64Kx4 12/15/20ns 9/10/13ns 10/12/13ns 6/8/10ns 7/9/10ns 28-SOJ-300 K6E0804C1C-C SRAM sheet samsung PDF

    KM68V257C

    Abstract: KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CTG
    Text: PRELIMINARY CMOS SRAM KM68V257C Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Jun. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.


    Original     		KM68V257C 32Kx8 28-TSOP1 004MAX 28-TSOP1-0813 KM68V257C KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CTG PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44645084, 44645094, 44645184, 44645364 72M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Description The μPD44645084 is a 8,388,608-word by 8-bit, the μPD44645094 is a 8,388,608-word by 9-bit, the μPD44645184 is a


    Original     		PD44645084, 72M-BIT PD44645084 608-word PD44645094 PD44645184 304-word 18-bit PD44645364 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM641003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    OCR Scan     		KM641003B 256Kx4 8/10/12nsafter 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44646092, 44646182, 44646362, 44646093, 44646183, 44646363 72M-BIT DDR II+ SRAM 2.0 & 2.5 Cycle Read Latency 2-WORD BURST OPERATION Description The μPD44646092 and μPD44646093 are 8,388,608-word by 9-bit, the μPD44646182 and μPD44646183 are


    Original     		PD44646092, 72M-BIT PD44646092 PD44646093 608-word PD44646182 PD44646183 304-word 18-bit PD44646362 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44647094, 44647184, 44647364, 44647096, 44647186, 44647366 72M-BIT QDRTM II+ SRAM 2.0 & 2.5 Cycle Read Latency 4-WORD BURST OPERATION Description The μPD44647094 and μPD44647096 are 8,388,608-word by 9-bit, the μPD44647184 and μPD44647186 are


    Original     		PD44647094, 72M-BIT PD44647094 PD44647096 608-word PD44647184 PD44647186 304-word 18-bit PD44647364 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM64258E CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating). Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Aug. 1. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet. Nov. 2. 1998


    Original     		KM64258E 64Kx4 28-SOJ-300 PDF

    uPD44165084

    Abstract: 9p marking
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT CMOS SYNCHRONOUS FAST SRAM QUAD DATA RATE 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364


    Original     		PD44165084, 18M-BIT PD44165084 152-word PD44165184 576-word 18-bit PD44165364 288-word 36-bit uPD44165084 9p marking PDF