Transistor smd 338
Abstract: TQ2S-24 TQ2S-L2-24 double coil latching relays smd TQ2SA-12V TQ2S-48 TQ2S-L2-12
Text: TQ SMD TESTING LOW-PROFILE SURFACE-MOUNT RELAY TQ SMD RELAYS FEATURES 14 .551 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V
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SMD15N
Abstract: No abstract text available
Text: Tem ic SMD/SMU15N05 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) Id3 (A) 50 0.10 15 TO-251 TO-252 o —im o FT] G D D rain connected to Tab S Ô Top View O rder Number: G SMD15N05
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OCR Scan
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SMD/SMU15N05
O-251
O-252
SMD15N05
SMU15N05
P-36850--Rev.
06/06A
SMD15N
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SMD10P06L
Abstract: B060C SMD10P
Text: T e m ic siiiconix_ SMD10P06L P-Channel Enhancement-Mode Ttansistor 175 °C Maximum Junction Temperature Product Summary VDs V rDS(on) (Q) 0.28 @ VGS = -1 0 V 0.35 @ VGS = -4.5 V -60 IDa (A) -1 0 -7.5 DPAK (T O -252) D EFÜ G S Top View
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SMD10P06L
P-36850--Rev.
P-36850--
06/0C/94)
SMD10P06L
B060C
SMD10P
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TQ2SA-12V
Abstract: DIODE SMD L26 TQ2SA-3V TQ2SA-L-12V smd diode L29 smd transistor mark D10 smd diode L23
Text: TQ SMD LOW-PROFILE SURFACE-MOUNT RELAY 14 .551 TQ SMD RELAYS FEATURES 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V
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101006J
TQ2SA-12V
DIODE SMD L26
TQ2SA-3V
TQ2SA-L-12V
smd diode L29
smd transistor mark D10
smd diode L23
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TQ2SA-12V
Abstract: TQ2SA-L-12V DIODE SMD L26 smd transistor 079 smd transistor L45 smd diode L23
Text: TQ SMD TESTING TQ SMD RELAYS LOW-PROFILE SURFACE-MOUNT RELAY FEATURES 14 .551 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V
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010404J
TQ2SA-12V
TQ2SA-L-12V
DIODE SMD L26
smd transistor 079
smd transistor L45
smd diode L23
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SMU30N03-30L
Abstract: q3020 smu30n03 SMD30N03-30L
Text: Tem ic SMD/SMU30N03-30L S em i co n d u c t or s N-Channel Enhancement-Mode Transistors, Logic Level Product Summary VDS V IDa (A) r DS(on) ( ^ ) 0.030 30 30 TO-251 TO-252 D P o o H r Drain Connected to Tab G D S Top View Ô G D S Top View Order Number:
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OCR Scan
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SMD/SMU30N03-30L
O-251
O-252
SMU30N03-30L
SMD30N03-30L
P-36853--Rev.
06-Jun-94
SMU30N03-30L
q3020
smu30n03
SMD30N03-30L
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CS5170
Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
Text: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004 General Information Elimination Of Ozone Depleting Chemicals . . . .
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SGD501/D
74VCX16373DT
74VCX16373DTR
74VCX16374DT
16BIT
74VCX16374DTR
80SQ045N
80SQ045NRL
CS5170
MUR1620CTA
NTP3055
SBRS81100T3G
MC1741CP
2N5458 SUBSTITUTE
SPEED CONTROL of DC MOTOR tda1085c
DIODE SWCH 100V SS SOT23 TR
znr SF 471
NCP1200AP60
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TQ2SA-12V
Abstract: TQ2SA-L-12V TQ2SA-L2-12V
Text: TESTING LOW-PROFILE SURFACE-MOUNT RELAY TQ-SMD RELAYS FEATURES 14 .551 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch in height comforming to EIA standards Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style
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TQ2SA-12V,
TQ2SA-12V
TQ2SA-L-12V
TQ2SA-L2-12V
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Untitled
Abstract: No abstract text available
Text: TESTING LOW-PROFILE SURFACE-MOUNT RELAY TQ-SMD RELAYS FEATURES 14 .551 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch in height comforming to EIA standards Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style
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TQ2SA-12V,
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TQ2S-12
Abstract: 5v relay 8 pin 30v dc 125v ac TQ-SMD 5 pin 12v relay connection smd transistor 079 TQ2SA-12V
Text: TQ SMD LOW-PROFILE SURFACE-MOUNT RELAY 14 .551 TQ SMD RELAYS FEATURES 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V
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Single12
010611J
TQ2S-12
5v relay 8 pin 30v dc 125v ac
TQ-SMD
5 pin 12v relay connection
smd transistor 079
TQ2SA-12V
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nais relay
Abstract: NAIS TQ2SA-L2 TQ-SMD NAIS Relay s2 12v TQ2SA-5V TQ2SA-12V TQ2SA-L-12V TQ2SA-L2-12V relay 5v 5pin Transistor smd 338
Text: TQ SMD TESTING LOW-PROFILE SURFACE-MOUNT RELAY TQ SMD RELAYS FEATURES 14 .551 9 .354 5.6 .220 mm inch RoHS Directive compatibility information http://www.nais-e.com/ • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style
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tq2sa
Abstract: TQ2SA-5V TQ-SMD TQ2SA-L-12V Transistor smd 338 TQ2SA-12V TQ2SA-L2-12V of 5pin 12v relay smd transistor 079 Ss 24 DIODE SMD
Text: TQ SMD LOW-PROFILE SURFACE-MOUNT RELAY 14 .551 TQ SMD RELAYS FEATURES 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V
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101006J
tq2sa
TQ2SA-5V
TQ-SMD
TQ2SA-L-12V
Transistor smd 338
TQ2SA-12V
TQ2SA-L2-12V
of 5pin 12v relay
smd transistor 079
Ss 24 DIODE SMD
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TQ2SA-12V
Abstract: smd ss 5 transistor TQ2SA-5V Transistor smd 338 5 V DC RELAY TQ2SA-3V TQ-SMD TQ2SA-L2-12V relay 5 pin TQ2SA-L-12V
Text: TQ SMD TESTING LOW-PROFILE SURFACE-MOUNT RELAY TQ SMD RELAYS FEATURES 14 .551 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V
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Untitled
Abstract: No abstract text available
Text: SPP 46N03 Infineon technologias SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS on 0.015 n A 46 b V 30 • d v/df rated
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OCR Scan
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46N03
-T0220-3-1
67040-S
742-A
145-A
0235bG5
Q133777
SQT-89
B535bQ5
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Untitled
Abstract: No abstract text available
Text: IXGH 12N100U1 IXGH 12N100AU1 Low VCE sat IGBT with Diode High Speed IGBT with Diode VCES ^C25 V ¥ CE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V TO-247 SMD* E Symbol Test Conditions v CES VcOR Td = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M H VGES v SBB
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OCR Scan
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12N100U1
12N100AU1
O-247
O-247
-247S
12N100
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tq2-24v
Abstract: tq2-5v relay
Text: TQ 2-pole 5 mm Surface Mount Relay, JIS C0806 compliant 3. Suitable for SMD automatic insertion SA type With a height of 5.6 mm .220 inch, the relays meet JIS C 0806 specifications. 4. High density mounting possible High-efficiency magnetic circuits ensure low magnetic flux leakage.
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C0806
ASCTB14E
201209-T
tq2-24v
tq2-5v relay
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transistor SMD t70
Abstract: BUZ104
Text: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ104 Vfcs Io flbSfon Package Ordering Code 50 V
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OCR Scan
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O-220
BUZ104
C67078-S1353-A2
a23SbÃ
GPT05155
fl235b05
00fi4Sc
transistor SMD t70
BUZ104
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L Vos 50 V b 17.5 A flDS on
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OCR Scan
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O-220
BUZ104L
78-S1358-A2
0235bG5
0064bD4
G0fl4b05
0235bOS
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SMD TRANSISTOR mosfet k2
Abstract: transistor SMD g 28 NB smd transistor
Text: Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin surface mounting plastic envelope, intended as a general purpose switch for
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OCR Scan
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BUK106-50L/S
BUK116-50L/S
BUK116-50L
BUK116-50S
BUK116-50L7S
Ips/lps25
SMD TRANSISTOR mosfet k2
transistor SMD g 28
NB smd transistor
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transistor SMD 1gs
Abstract: 46n03l smd 1Gs SD-46 Diode
Text: , • - SPP 46N03L Inf ineon technology SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel ^D S Drain-Source on-state resistance . Enhancement mode f l D S o n Continuous drain current • Avalanche rated 30 V 0 .0 1 2
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OCR Scan
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46N03L
SPP46N03L
P-T0220-3-1
Q67040-S4147-A2
SPB46N03L
P-T0263-3-2
Q67040-S4743-A2
S35bQ5
Q133777
SQT-89
transistor SMD 1gs
46n03l
smd 1Gs
SD-46 Diode
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Untitled
Abstract: No abstract text available
Text: Tem ic SMD10P06 Semiconductors P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V ) rDS(on) (£2) IDa (A ) -6 0 0.28 @ V Gs = 10 V ±10 c m £(«•* S Q TO-252 o n □ it Drain Connected to Tab G D S Top View 6 D Order Number: SMD10P06 P-Channel MOSFET
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OCR Scan
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SMD10P06
O-252
S-46848â
26-Feb-96
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SMD15N05
Abstract: SMU15N05
Text: Tem ic SMD/SMU15N05 Semiconductors N-Channel Enhancement-Mode Transistors Product Summary V BR DSS 50 (V) IDa (A) r DS(on) ( ^ ) 0.10 15 TO-251 D O TO-252 o o TT Drain connected to Tab G D S Top View Order Number: SMD15N05 Ô s G D S Top View Order Number:
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OCR Scan
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SMD/SMU15N05
O-251
O-252
SMD15N05
SMU15N05
P-36850--Rev.
06-Jun-94
SMD15N05
SMU15N05
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smd rgs
Abstract: SMD TRANSISTOR FL smd code buz 7C SMD TRANSISTOR SMD TRANSISTOR qd SM-38 transistor SMD DIODE 681 smd transistor ds smd transistor ds 65 DIODE BUZ smd
Text: Infineon technologies BUZ 32 SMD SIPMOS Power T ransistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds 1D ^DS(on) Package BUZ 32 SMD 200 V 9.5 A 0.4 f i d 2p a k Ordering Code Q67042-S4133 Maximum Ratings Parameter
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OCR Scan
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q67042-s4133
smd rgs
SMD TRANSISTOR FL
smd code buz
7C SMD TRANSISTOR
SMD TRANSISTOR qd
SM-38 transistor
SMD DIODE 681
smd transistor ds
smd transistor ds 65
DIODE BUZ smd
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Untitled
Abstract: No abstract text available
Text: PD - 94600 IRF5NJZ34 55V, N-CHANNEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 Product Summary Part Number BVDSS RDS(on) ID IRF5NJZ34 55V 0.04Ω 22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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IRF5NJZ34
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