IR V 2238
Abstract: 100-DOT BUL 128 A 7941a lc7941 LC7940A LC7941A LC7942A dot lcd W 9719 to-3
Text: J I SA W O LC7940A, 7941A N 0.2238A CM OS LSI Dot M atrix LCD Drivers M - J l O v e r v ie w The LC7940A, 7941A are large-scale dot m atrix LCD segm ent d r iv ^ B S I s .^ l^ ^ L C ^ 4 0 A ,.^ 4 l A latch display data of 30 bits tran sferred serial or 4-bit parallel from 4 ,/ o n tr o I ^ ^ J f e ^ r ie r ja i p ! LCD drive
|
OCR Scan
|
LC7940A,
LC7941A
C7940A
C7941A
LC7942A
IR V 2238
100-DOT
BUL 128 A
7941a
lc7941
LC7940A
LC7942A
dot lcd
W 9719 to-3
|
PDF
|
R6095
Abstract: No abstract text available
Text: Back to FETs il\M E S ^ NFD410 M W^NEW ENGLAND SEMICONDUCTOR ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage Vos Gate-Source Voltage
|
OCR Scan
|
NFD410
R6095
|
PDF
|
6-pin LCC
Abstract: No abstract text available
Text: Back to FETs POWER MOSFET - N CHANNEL SURFACE MOUNT • • • • Switching Power Supplies Repetitive Avalanche Rating Ceramic Leedless Chip Carrier High Reliability ABSOLUTE M AXIM UM RATINGS Tc = 25°C unless otherwise noted Drain-Source Voltage Gate-Source Voltage
|
OCR Scan
|
NESL024
00A/iaS,
00A/nS,
6-pin LCC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Back to FETs 0 /V E F ^ IP NES250/61 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS
|
OCR Scan
|
NES250/61
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 0/V E F ^ IP Back to FETs NES230/5 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS
|
OCR Scan
|
NES230/5
|
PDF
|
NESY140
Abstract: NESYM140 L038
Text: NESY140 NESYM140 POWER MOSFET - N CHANNEL • • • • T0257AA PACKAGE Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability ABSOLUTE M AXIM UM RA TING S Tc = 25°C unless otherwise noted PA R A M ETER S/TEST CO NDITIO NS
|
OCR Scan
|
NESY140
NESYM140
NESYM140
T0257AA
L038
|
PDF
|
NESL024
Abstract: No abstract text available
Text: POWER MOSFET - N CHANNEL SURFACE MOUNT • • • • Sw itching P ow er Supplies R epetitive A valanche R ating C eram ic L eedless C hip C arrier High R eliability ABSOLUTE M AXIM UM RATINGS Tc = 25°C unless otherwise noted PA R A M E T E R S/T E ST C O N D IT IO N S
|
OCR Scan
|
NESL024
NESL024
100/VyS,
B0M46
794-i666
|
PDF
|
XM46-1158
Abstract: 0-40Q
Text: 0 /V EF ^ IP NES230/5 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) VALUE 200 ±20 5.5
|
OCR Scan
|
NES230/5
00A/nS,
XM46-1158
0-40Q
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Back to FETs NESY140 NESYM140 POWER MOSFET - N CHANNEL • • • • T0257AA PACKAGE Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability ABSOLUTE MAXIMUM RATINGS T c = 25°C unless otherwise noted PARAM ETERS/TEST CONDITIONS
|
OCR Scan
|
NESY140
NESYM140
T0257AA
NESYM140
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Back to FETs 0 /V E F ^ IP NESY034 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) SYMBOL
|
OCR Scan
|
NESY034
|
PDF
|
NESM140
Abstract: NESM140Z
Text: 0 /V E F ^ IP NESM140 NESM140Z NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING T O -254 / 28 A M PE R E 100 V O L T S 0 .0 7 7 Q T O -254Z A BSO LU T E M A X IM U M R A T IN G S (T c = 25°C unless otherw ise noted)
|
OCR Scan
|
NESM140
NESM140Z
XM46-1158
NESM140Z
|
PDF
|
65RD
Abstract: R180100
Text: 0 /V E F ^ IP Back to FETs NES250/61 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • R E P E T IT IV E A V A L A N C H E R A T IN G S • L O W R DS 0 n • L O W D R IV E R E Q U IR E M E N T • D Y N A M IC d v / d t R A T IN G A BSO LU T E M A X IM U M R A T IN G S (Tc = 25°C unless otherw ise noted)
|
OCR Scan
|
NES250/61
65RD
R180100
|
PDF
|
New England Semiconductor
Abstract: No abstract text available
Text: 0 /V EF ^ IP NES250/61 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • R E P E T IT IV E A V A L A N C H E R A T IN G S • L O W R DS 0 n • L O W D R IV E R E Q U IR E M E N T • D Y N A M IC d v / d t R A T IN G A BSO LU T E M A X IM U M R A T IN G S (Tc = 25°C unless otherw ise noted)
|
OCR Scan
|
NES250/61
New England Semiconductor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Back to FETs POWER MOSFET N CHANNEL ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (1) Power Dissipation | T A = 25°C
|
OCR Scan
|
|
PDF
|
|
|
h12H
Abstract: h-12-H NESM10N60
Text: NESM10N60 POWER MOSFET - N CHANNEL • • • • SWITCHING POWER SUPPLIES REPETITIVE AVALANCHE RATING ISOLATED HERMETIC PACKAGE HIGH RELIABILITY ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted PARAM ETERS/TEST CONDITIONS SYMBOL LIM ITS 600 Drain-Source Voltage
|
OCR Scan
|
NESM10N60
h12H
h-12-H
NESM10N60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Back to FETs 0 /V E F ^ IP NSG2608 NEW ENGLAND SEMICONDUCTOR • • • • POW ER M OSFET 800 VO LTS r D S o n 2 .4 Q UNTNEL POWER MOSFET - N Switching Power Supplies Repetitive Avalanche Rating Isolated Herm etic Package High Reliability ABSOLUTE M AXIMUM RATINGS (Tc = 25°C unless otherwise noted)
|
OCR Scan
|
NSG2608
NSG2608
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Back to FETs 0 /V E F ^ IP NES 130/59 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREM ENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS
|
OCR Scan
|
NES130/59
|
PDF
|
NES150
Abstract: XM46-1158
Text: 0 /V E F ^ I P NES150 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0N • LOW DRIVE REQUIREM ENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS
|
OCR Scan
|
NES150
XM46-1158
|
PDF
|
NES 0213
Abstract: N-318
Text: 0 /V E F ^ IP NES 130/59 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREM ENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS
|
OCR Scan
|
NES130/59
XM46-1158
NES 0213
N-318
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Back to FETs NSG 2554 POWER MOSFET • • • • • Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package Ceramic Eyelets High Reliability . , . . . . . . . . . n . _ _ N CHANNEL POWER MOSFET -S y * ^ i Il l 1 • TO-254Z ABSOLUTE MAXIMUM RATINGS Tc = 25UC unless otherwise noted
|
OCR Scan
|
O-254Z
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Back to FETs NESY9140 NESYM9140 POWER MOSFET - P CHANNEL T0257AA PACKAGE • • • • Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability O ABSOLUTE MAXIMUM RATINGS TL = 25°C unless otherwise noted 1 PARAMETERS/TEST CONDITIONS
|
OCR Scan
|
NESY9140
NESYM9140
T0257AA
NESYM9I40
NESYM9140
00A/nS,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Back to FETs 0 /V E F ^ IP NEW ENGLAND SEMICONDUCTOR POWER MOSFET N-CHANNEL • REPETITIVE AVALANCHE RATINGS • L O W R D S O N • LOW DRIVE REQUIREMENT • DYNAMIC dv/dt RATING ABSOLUTE M AXIM U M R A TING S (Tc = 25°C unless otherwise noted) SYM BOL
|
OCR Scan
|
NESM054
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Back to FETs 0 /V E F ^ IP NES150/61 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING A B SO L U T E M A X IM U M R A T IN G S (Tc = 25°C unless otherw ise noted)
|
OCR Scan
|
NES150/61
|
PDF
|
lt 860
Abstract: NESY240 Ot38
Text: NESY240 POWER MOSFET N CHANNEL REPETITIVE AVALANCHE RATINGS • LOW R,D S O N • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) PA R A M E T E R S / T E ST C O N D IT IO N S
|
OCR Scan
|
NESY240
O-257AA
794-i666
lt 860
NESY240
Ot38
|
PDF
|
