SS TRANSISTOR FET Search Results

SS TRANSISTOR FET Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

SS TRANSISTOR FET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by BSS123LT1/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor BSS123LT1 N-Channel 3 DRAIN Motorola Preferred Device 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit D rain-Source Voltage V d SS 100 Vdc G ate-Source Voltage	OCR Scan	BSS123LT1/D BSS123LT1 OT-23 O-236AB)	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N -C h annel 3 DRAIN Motorola Preferred Device 2 SOURCE 1 MAXIMUM RATINGS 2 Symbol Value Unit Drain-Source Voltage Vd SS 100 Vdc Gate-Source Voltage — Continuous — Non-repetitive tp < 50 \|is	OCR Scan	BSS123LT1 -236A b3b72S5	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7000 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN MAXIMUM RATINGS Rating Drain Source Voltage Symbol Value Unit V d SS 60 Vdc Drain-Gate Voltage R g s = 1-0 M il	OCR Scan	2N7000/D com-TOUCHTONE602-244-6609	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 3 DRAIN N -C h an n el — Enhancem ent 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Vdc V d SS 240 Drain-Gate Voltage V d GR 60 Vdc Gate-Source Voltage - Continuous - Non-repetitive tp < 50 [is	OCR Scan	VN2410L 25Vdc, 00T377S	PDF
MA4F600-298 Abstract: transistor bul 3040 MA4F600 bul 3040 fet ft 30 GHZ Text: M/A-COn SEMICONDUCTOR "t 3 D~\| SbMBSlM ODDDbMb T r- Am 3i -ss MA4F600 Series Gallium Arsenide Low Noise Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F600 series of GaAs FETs is a low cost 0.8 ¡im gate length GaAs FET. The low noise	OCR Scan	MA4F600 90X90 MA4F600-298 transistor bul 3040 bul 3040 fet ft 30 GHZ	PDF
2N7000 021 Abstract: fet 2n7000 Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2 N 7 0 00 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN / MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V d SS 60 Vdc D rain-G ate Voltage R g s = 1 0 M il	OCR Scan	2N7000/D O-226AA) 2N7000 021 fet 2n7000	PDF
2N7002LT1 Abstract: No abstract text available Text: I MOTOROLA Order this document by 2N7002LT1/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7002LT1 N -C h a n n e l E n hancem en t 3 drain Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit V d SS 60 Vdc VDGR 60 Vdc 'D Id mAdc 'd m	OCR Scan	2N7002LT1/D 7002LT1 O-236AB) 2N7002LT1	PDF
BF170LT1 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor M M B F170LT1 N -C h an n el GATE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit D rain-Source Voltage V d SS 60 Vdc D rain-G ate Voltage VDGS 60 Vdc Gate-Source Voltage — Continuous — N on-repetitive tp < 50 (is	OCR Scan	F170LT1 O-236AB) MMBF170LT1< BF170LT1 BF170LT1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor VN 2406L 3 DRAIN N -C h an n el — Enhancem ent Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Unit Symbol Value D rain-Source Voltage V d SS 240 Vdc D rain-G ate Voltage V d GR 60 Vdc G ate-S ource Voltage	OCR Scan	2406L VN2406L GDT3773	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Rating Sym b ol Value U nit V d SS 60 Vdc V d GR 60 V dc Vg S V G SM +20 V dc Vpk Id 150 'd m 1000 Pd 400	OCR Scan	VN2222LL b3b7255 DT377D b3b72SS	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N -C h a n n e l — Enhancem ent VN0300L 3 DRAIN Y Motorola Preferred Device 2 GATE V TMOS 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit D rain-S ource Voltage V d SS 60 V D ra in -G a le Voltage	OCR Scan	VN0300L	PDF
MTP8N45 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R D I• b3b?as4 aoâibîB a ime F I T-ÌÌ-I3 MOTOROLA ■ I SEM ICO NDUCTO R TECHNICAL DATA IRF340 Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF340 V d SS 400 V rDS on >D 0.55 n 10 A This TM O S Power FET is designed for high voltage, high speed	OCR Scan	IRF340 MTP8N45	PDF
IRF450 transistor Abstract: irf450 mosfet 452 IRF452 mosfet IRF450 Text: MOTOROLA SEMICONDUCTOR IRF450 IRF451 IRF452 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V d SS rDS on >D IRF450 500 V 0.4 n 13 A IRF451 450 V 0.4 n 13 A IRF452 500 V 0.5 n 12 A T h e s e T M O S P o w e r FETs are d es igne d fo r high v o ltag e, high	OCR Scan	IRF450 IRF451 IRF452 IRF452 IRF451. IRF450, IRF450 transistor mosfet 452 mosfet IRF450	PDF
N7000 Abstract: fet 2n7000 2N7000 02911 Text: o Iß A N S Y S HiCTROmCS L I M I T E D 3 DRAIN FET Transistor N -C h a n n e l — E n h a n c e m e n t MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V d SS 60 Vdc Drain-Gate Voltage R g s = 1 V d GR 60 Vdc VGS Vg SM ±20 ±40 Vdc Vpk 'd	OCR Scan	N7000 2N7000 O-226AA) N7000 fet 2n7000 2N7000 02911	PDF

photocoupleur Abstract: schema d un transistor en Convertisseur Tension Frequence MODULATION DE PHASE SI9117 equivalente frequence diodes de regulation de tension transistor C8 renco Text: MISE EN ŒUVRE APPLICATIONS C onvertisseur à transistor de puissance intégré supportant 1 A. D5SCAM 1 R 3,3 nF 1,5 Q 82 pF 12. D 10 11 12 13 R 13 14 15 2,2 kil 16 SI9117 470 Q g NC •s e n s e V+ v cc V- SD V ref SYNC NI c csc FB R os c COMP ss 10 p1*	OCR Scan	SI9117 fil-13 Si9117. photocoupleur schema d un transistor en Convertisseur Tension Frequence MODULATION DE PHASE equivalente frequence diodes de regulation de tension transistor C8 renco	PDF
Untitled Abstract: No abstract text available Text: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,	OCR Scan	2SK1123	PDF
IX 1646 Abstract: 2.t transistor Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP69N03LT, PHB69N03LT, PHD69N03LT QUICK REFERENCE DATA VDSS = 25 V ’Trench’ technology Very low on-state resistance Fast switching	OCR Scan	PHP69N03LT, PHB69N03LT, PHD69N03LT PHP69N03tage. IX 1646 2.t transistor	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor PHP3N20L Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high	OCR Scan	PHP3N20L T0220AB	PDF
PWM IC 7PIN Abstract: No abstract text available Text: TECHNICAL NOTE Large Current External FET Controller Type Switching Regulators Single-output Step-up, High-efficiency Switching Regulator Controller Type BD9763FVM ●Description BD9763FVM is a 1-channel high efficiency step-up switching regulator. It is possible to choose small application space due to its high-speed operation (Max switching frequency 1.2MHz)	Original	BD9763FVM BD9763FVM 3000pcs PWM IC 7PIN	PDF
diode DS10 Abstract: No abstract text available Text: Panasonic Power Transistor Arrays F-MOS FETs PUB4701 Silicon N-Channel Power F-MOS FET • Features 0 Avalanche energy capacity guaranteed • High-speed switching • Low ON-resistance 0 No secondary breakdown 0 Low-voltage drive ■ A p p lic a tio n s	OCR Scan	PUB4701 pul10V, diode DS10	PDF
ON586 Abstract: No abstract text available Text: Phi l i ps S e m i c o n d u c t o r s P r e l i m i n a r y speci f i cat i on T r e n c h M O S transistor Logic level FET SY M B O L F E A TU R ES • • • • • • PHP87N03LT, PHB87N03LT QUICK RE FE R E N C E DATA Vdss - 25 V ’T rench’ technology	OCR Scan	PHP87N03LT, PHB87N03LT ON586	PDF
PHD55N03LT Abstract: PHB55N03LT Text: Product specification Philips Semiconductors TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP55N03LT, PHB55N03LT, PHD55N03LT QUICK REFERENCE DATA VDSS = 25 V ’T rench’ technology Very low on-state resistance Fast switching	OCR Scan	PHP55N03LT, PHB55N03LT, PHD55N03LT PHP55N03C) PHD55N03LT PHB55N03LT	PDF
MC 140 transistor Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PINNING - SQT404 PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation Junction temperature Drain-source on-state resistance	OCR Scan	BUK7614-55 SQT404 MC 140 transistor	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench’ technology. The device features very low on-state resistance	OCR Scan	BUK7520-55 220AB	PDF

SS TRANSISTOR FET Search Results

SS TRANSISTOR FET Result Highlights (5)

SS TRANSISTOR FET Datasheets Context Search

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MA4F600-298

2N7000 021

2N7002LT1

BF170LT1

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MTP8N45

IRF450 transistor

N7000

photocoupleur

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IX 1646

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PWM IC 7PIN

diode DS10

ON586

PHD55N03LT

MC 140 transistor

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