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TAIYO YUDEN MSAYL168SSD223KTNA01 CAP CER 0.022UF 10V 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSAYL168SSD223KTNA01	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.06665	Buy Now
	MSAYL168SSD223KTNA01	Cut Tape	4,000		1	1 $0.33 10 $0.196 100 $0.1237 1000 $0.0855 10000 $0.0855	Buy Now
	MSAYL168SSD223KTNA01	Digi-Reel	4,000		1	1 $0.33 10 $0.196 100 $0.1237 1000 $0.0855 10000 $0.0855	Buy Now
Avnet Americas	MSAYL168SSD223KTNA01	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.05125	Buy Now
Avnet Abacus	MSAYL168SSD223KTNA01	Reel		17 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TAIYO YUDEN MSASQ219SSD221KTNA01 CAP CER 220PF 250V 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSASQ219SSD221KTNA01	Cut Tape	4,000		1	1 $0.27 10 $0.156 100 $0.097 1000 $0.06611 10000 $0.06611	Buy Now
	MSASQ219SSD221KTNA01	Digi-Reel	4,000		1	1 $0.27 10 $0.156 100 $0.097 1000 $0.06611 10000 $0.06611	Buy Now
	MSASQ219SSD221KTNA01	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.05087	Buy Now
Avnet Abacus	MSASQ219SSD221KTNA01	Reel		17 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TAIYO YUDEN MSAYU168SSD222KTNA01 CAP CER 2200PF 50V 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSAYU168SSD222KTNA01	Cut Tape	4,000		1	1 $0.34 10 $0.2 100 $0.1261 1000 $0.08726 10000 $0.08726	Buy Now
	MSAYU168SSD222KTNA01	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.06809	Buy Now
	MSAYU168SSD222KTNA01	Digi-Reel	4,000		1	1 $0.34 10 $0.202 100 $0.1274 1000 $0.08813 10000 $0.08813	Buy Now
Avnet Abacus	MSAYU168SSD222KTNA01	Reel		17 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	MSAYU168SSD222KTNA01	Cut Tape	4,000			1 - 10 - 100 $0.105 1000 $0.0814 10000 $0.0674	Buy Now
Vishay Sfernice RSSD20117A4R70KB15 ADJ PWR RES 4.7 OHM 100W CHAS MT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RSSD20117A4R70KB15	Bulk	21		1	1 $69.71 10 $69.71 100 $41.754 1000 $41.754 10000 $41.754	Buy Now
Vishay Sfernice RSSD25168A47R0JB06 ADJ PWR RES 47 OHM 200W CHAS MT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RSSD25168A47R0JB06	Bulk	8		1	1 $106.05 10 $106.05 100 $70.0075 1000 $70.0075 10000 $70.0075	Buy Now

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SSD2 Datasheets (28)

Part	Manufacturer	Description	Datasheet Type	PDF
SSD2	Cooper Bussmann	2A:240V:HRC Fuse	Original	PDF
SSD20	Cooper Bussmann	20A:240V:HRC Fuse	Original	PDF
SSD2003	Samsung Electronics	Dual N-Channel Power MOSFET	Scan	PDF
SSD2005	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SSD2007	Fairchild Semiconductor	Dual N-CHANNEL POWER MOSFET	Original	PDF
SSD2007	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SSD2007A	Fairchild Semiconductor	Dual N-Channel Power MOSFET	Original	PDF
SSD2007ASTF	Fairchild Semiconductor	50V N-Channel Dual Power MOSFET	Original	PDF
SSD2007ATF	Fairchild Semiconductor	50V N-Channel Dual Power MOSFET	Original	PDF
SSD2008A	Fairchild Semiconductor	30V N/P Dual Power MOSFET	Original	PDF
SSD2009	Fairchild Semiconductor	Dual N-CHANNEL POWER MOSFET	Original	PDF
SSD2009A	Fairchild Semiconductor	Dual N-Channel Power MOSFET	Original	PDF
SSD2009ATF	Fairchild Semiconductor	50V N-Channel Dual Power MOSFET	Original	PDF
SSD2011A	Fairchild Semiconductor	Dual P-Channel Power MOSFET	Original	PDF

SSD2011ATF	Fairchild Semiconductor	60V P-Channel Dual Power MOSFET	Original	PDF
SSD2019A	Fairchild Semiconductor	20V P-Channel Dual Power MOSFET	Original	PDF
SSD2019A	Fairchild Semiconductor	Dual P-CHANNEL POWER MOSFET	Original	PDF
SSD2021	Fairchild Semiconductor	30V N-Channel Dual Power MOSFET	Original	PDF
SSD2021	Fairchild Semiconductor	Dual N-CHANNEL POWER MOSFET	Original	PDF
SSD2025	Fairchild Semiconductor	Dual N-CHANNEL POWER MOSFET	Original	PDF

SSD2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SSD20P03 P-Ch Enhancement Mode Power MOSFET -20 A, -30 V, RDS ON 36 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD20P03 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate	Original	PDF	SSD20P03 SSD20P03 O-252 300us, 01-June-2002
SSD20P03-60 Abstract: MosFET dpack power mosfet Text: SSD20P03-60 P-Ch Enhancement Mode Power MOSFET 24A, -30V, RDS ON 59mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.	Original	PDF	SSD20P03-60 O-252 18-May-2010 SSD20P03-60 MosFET dpack power mosfet
SSD20N20-125D Abstract: MosFET MOSFET N-CH 200V Text: SSD20N20-125D 12A , 200V , RDS ON 260mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)	Original	PDF	SSD20N20-125D O-252 O-252 13-Sep-2013 SSD20N20-125D MosFET MOSFET N-CH 200V
SSD20P15-295D Abstract: MosFET Text: SSD20P15-295D -10.7A, -150V, RDS ON 295mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process.Low RDS(on) assures minimal power loss	Original	PDF	SSD20P15-295D -150V, O-252 10-Sep-2013 SSD20P15-295D MosFET
Untitled Abstract: No abstract text available Text: SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 20A TO-252 RDS(ON) (mΩ) Max D 30 @VGS = 10V G 55 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ TO-252 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)	Original	PDF	SSD2030N O-252 O-252
SSD2008 Abstract: SSD2008A Text: SSD2008A !"#$ !"#$%&'!! #+,(-.+/0(1 FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 • Lower RDS(ON) S2 3 6 D2 ■ Improved Inductive Ruggedness ■ Fast Swtching Times G2 4 5 D2 ■ Low Input Capacitance ■ Extended Safe Operating Area D1 D1 Top View S2 ■ Improved High Temperature Reliability	Original	PDF	SSD2008A SSD2008 SSD2008 SSD2008A
SSD20P06-135D Abstract: MosFET 135D Text: SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS ON 135mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat	Original	PDF	SSD20P06-135D O-252 25-Aug-2010 SSD20P06-135D MosFET 135D
SSD2007A Abstract: ISS106 Text: SSD2007A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOP Extremely Lower RDS ON Improved Inductive Ruggedness Fast Switching Times S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View Rugged Polysilicon Gate Cell Structure Low Input Capacitance D1,D2	Original	PDF	SSD2007A SSD2007A ISS106
MOSFET g15 Abstract: SSD2019A Text: SSD2019A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1 D2 ! Improved High Temperature Reliability	Original	PDF	SSD2019A MOSFET g15 SSD2019A
MOSFET 7121 Abstract: PN channel MOSFET 10A SSD2025 Text: SSD2025 Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS on S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1,D2 D1,D2 ! Improved High Temperature Reliability	Original	PDF	SSD2025 MOSFET 7121 PN channel MOSFET 10A SSD2025
transistor ssd2008 Abstract: SSD2008 SSD2008A Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v Text: SSD2008A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 ! Low Input Capacitance ! Extended Safe Operating Area D1 D1 Top View D2 D2 ! Improved High Temperature Reliability	Original	PDF	SSD2008A SSD2008 transistor ssd2008 SSD2008 SSD2008A Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v
Untitled Abstract: No abstract text available Text: SSD2025 Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS on S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1,D2 D1,D2 ! Improved High Temperature Reliability	Original	PDF	SSD2025 SSD2025 -SD2025TF
Untitled Abstract: No abstract text available Text: SSD2011A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1 D2 ! Improved High Temperature Reliability	Original	PDF	SSD2011A SSD2011A 12011ATF
Untitled Abstract: No abstract text available Text: SSD2009A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC n Lower RDS ON n Improved Inductive Ruggedness n Fast Swtching Times S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View n Low Input Capacitance n Extended Safe Operating Area D1 D1 n Improved High Temperature Reliability	Original	PDF	SSD2009A SSD2009

12a36 Abstract: No abstract text available Text: SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS ON 255mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.	Original	PDF	SSD20N15-250D O-252 22-Jul-2010 12a36
Untitled Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS SSD2101 FEATURES • • • • • • • 8SOIC Lower R d s o n Improved inductive ruggedness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	SSD2101
Untitled Abstract: No abstract text available Text: DUAL P-CHANNEL POWER MOSFETS SSD2015 FEATURES • Lower R ds<on • Improved inductive ruggedness • Fast switching times • Rugged polysiitcon gate ceil structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	PDF	SSD2015 300/iS, D05TS13
SSD2005 Abstract: P-CHANNEL POWER MOSFET Text: SSD2005 Dual P-CHANNEL POWER MOSFET FEATURES 8SOIC • Lower Rds on ■ improved Inductive Ruggedness Si ■ Fast Switching Times gi q t ■ Lower Input Capacitance ■ Extended Safe Operating Area ■ Improved High Temperature Reliability [T o S2 ~8~l Pi	OCR Scan	PDF	SSD2005 SSD2005 P-CHANNEL POWER MOSFET
c550c Abstract: mosfet 751 Text: SSD2004 N&P-CHANNEL POWER MOSFET FEATURES 8 SOIC • Lower Rds on ■ Improved Inductive Ruggedness si [ T ~BlD i ■ Fast Switching Times Gì [ j T ~ n 01 ■ Lower Input Capacitance Si [ X ~6~l Dì Gj [ T H jD i ■ Extended Safe Operating Area ■ Improved High Temperature Reliability	OCR Scan	PDF	SSD2004 SSD2004 00A/ns c550c mosfet 751
SSD2009 Abstract: TP150 2TS01 Text: DUAL N-CHANNEL POWER MOSFETS SSD2009 FEATURES • • • • • • • 8SO IC Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability	OCR Scan	PDF	SSD2009 SSD2009 TP150 2TS01
SSD2004 Abstract: 250M Text: N&P-CHANNEL POWER MOSFETS SSD2004 FEATURES • Extremely Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	PDF	SSD2004 SSD2004 00A/iiS 300//s, 250M
SSD2003 Abstract: U2020 W749 Text: SSD2003 Dual N-CHANNEL POWER MOSFET FE A T U R E S • Lower Rds on ■ Improved Inductive Ruggedness ■ Fast Switching Times ■ Lower Input Capacitance ■ Extended Safe Operating Area ■ Improved High Temperature Reliability Product Summary Part Number	OCR Scan	PDF	SSD2003 SSD2003 00A/ns U2020 W749
Untitled Abstract: No abstract text available Text: P-CHANNEL POWER MOSFETS SSD2104 FEATURES • • • • • • • Lower Rds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	SSD2104 00A///S to150Â
Untitled Abstract: No abstract text available Text: DUAL N-CHANNEL POWER MOSFETS SSD2013 FEATURES • • • • • • • 8SOIC Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	SSD2013 Cto150â

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SSD2 Price and Stock

TAIYO YUDEN MSAYL168SSD223KTNA01

TAIYO YUDEN MSASQ219SSD221KTNA01

TAIYO YUDEN MSAYU168SSD222KTNA01

Vishay Sfernice RSSD20117A4R70KB15

Vishay Sfernice RSSD25168A47R0JB06

SSD2 Datasheets (28)

SSD2 Datasheets Context Search

Untitled

SSD20P03-60

SSD20N20-125D

SSD20P15-295D

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SSD2008

SSD20P06-135D

SSD2007A

MOSFET g15

MOSFET 7121

transistor ssd2008

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12a36

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SSD2005

c550c

SSD2009

SSD2004

SSD2003

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