A115-A
Abstract: C101 SN74SSTU32864D SN74SSTU32864DGKER TOP-SIDE MARKING H2 SU864D
Text: SN74SSTU32864D 25-BIT CONFIGURABLE REGISTERED BUFFER WITH SSTL_18 INPUTS AND OUTPUTS www.ti.com SCES623A – FEBRUARY 2005 – REVISED APRIL 2005 FEATURES • • • • • • Member of the Texas Instruments Widebus+ Family Pinout Optimizes DDR2 DIMM PCB Layout
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SN74SSTU32864D
25-BIT
SCES623A
14-Bit
A115-A
C101
SN74SSTU32864D
SN74SSTU32864DGKER
TOP-SIDE MARKING H2
SU864D
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D869
Abstract: marking nb IDT74SSTU32D869
Text: IDT74SSTU32D869 14-BIT 1:2 REGISTERED BUFFER WITH PARITY COMMERCIAL TEMPERATURE RANGE 14-BIT 1:2 REGISTERED BUFFER WITH PARITY IDT74SSTU32D869 FEATURES: • • • • • • • • 1.8V Operation Designed to drive low impedance nets SSTL_18 style clock and data inputs
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IDT74SSTU32D869
14-BIT
100mA
MIL-STD-883,
200pF,
150-pin
10MHz,
D869
marking nb
IDT74SSTU32D869
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Untitled
Abstract: No abstract text available
Text: CBTW28DD14 14-bit bus switch/multiplexer for DDR2/DDR3/DDR4 applications Rev. 6 — 25 July 2014 Product data sheet 1. General description This 14-bit bus switch/multiplexer MUX is designed for 1.5 V or 1.8 V supply voltage operation, POD_12, SSTL_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS
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CBTW28DD14
14-bit
CBTW28DD14
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is46dr32801a-5bbla1
Abstract: 126-ball IS46DR32801A
Text: IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)
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IS43DR32800A,
IS43/46DR32801A
8Mx32
256Mb
18-compatible)
DDR2-667D
IS43DR32801A-3DBLI
DDR2-533C
IS43DR32801A-37CBLI
DDR2-400B
is46dr32801a-5bbla1
126-ball
IS46DR32801A
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IS43DR83200A
Abstract: IS43DR16160A-3DBLI datasheet IS43DR16160A-37CBLI IS43DR83200A-37CBLI IS43DR32160A DDR2 x32
Text: IS43DR83200A IS43/46DR16160A, IS43DR32160A 32Mx8, 16Mx16, 16Mx32 stacked die DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle
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IS43DR83200A
IS43/46DR16160A,
IS43DR32160A
32Mx8,
16Mx16,
16Mx32
18-compatible)
IS43DR32160A-37CBLI
400Mhz
IS43DR32160A-5BBLI
IS43DR83200A
IS43DR16160A-3DBLI datasheet
IS43DR16160A-37CBLI
IS43DR83200A-37CBLI
IS43DR32160A
DDR2 x32
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Untitled
Abstract: No abstract text available
Text: IS43/46DR83200A IS43/46DR16160A 32Mx8, 16Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)
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IS43/46DR83200A
IS43/46DR16160A
32Mx8,
16Mx16
18-compatible)
256Mb
-40oC
105oC,
105oC
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Untitled
Abstract: No abstract text available
Text: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias
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SN74CBTU4411
SCDS192
000-V
A114-B,
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IDT74SSTU32864D
Abstract: No abstract text available
Text: IDT74SSTU32864D 1:1 AND 1:2 REGISTERED BUFFER WITH 1.8V SSTL I/O COMMERCIAL TEMPERATURE RANGE 1:1 AND 1:2 REGISTERED BUFFER WITH 1.8V SSTL I/O FEATURES: IDT74SSTU32864D DESCRIPTION: • • • • • • • 1.8V Operation SSTL_18 style clock and data inputs
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IDT74SSTU32864D
100mA
MIL-STD-883,
200pF,
96-pin
SSTU32864D
25-bit
14-bit
10MHz,
IDT74SSTU32864D
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Untitled
Abstract: No abstract text available
Text: SN74SSTU32864C 25-BIT CONFIGURABLE REGISTERED BUFFER WITH SSTL_18 INPUTS AND OUTPUTS www.ti.com SCES542B – JANUARY 2004 – REVISED APRIL 2005 FEATURES • • • • • • Member of the Texas Instruments Widebus+ Family Pinout Optimizes DDR2 DIMM PCB Layout
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SN74SSTU32864C
25-BIT
SCES542B
14-Bit
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EM68A16CWQB-25H
Abstract: EM68A16CWQB 2TWR EM68A Etron em68a16
Text: EtronTech EM68A16CWQB 16M x 16 bit DDRII Synchronous DRAM SDRAM Etron Confidential Advanced (Rev 1.1 July / 2010) Features Overview • JEDEC Standard Compliant • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Power supplies: VDD & VDDQ = +1.8V ± 0.1V
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EM68A16CWQB
18-compatible)
333/400MHz
84-Ball
EM68A16CWQB-25H
EM68A16CWQB
2TWR
EM68A
Etron
em68a16
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LA2 DT2
Abstract: BGA64 TC59LM906AMG TC59LM914AMG P-BGA64-1317-1
Text: TC59LM914/06AMG-37,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 512Mbits Network FCRAM1 SSTL_18 / HSTL_Interface − 4,194,304-WORDS x 8 BANKS × 16-BITS − 8,388,608-WORDS × 8 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM914/06AMG is Fast Cycle
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TC59LM914/06AMG-37
512Mbits
304-WORDS
16-BITS
608-WORDS
TC59LM914/06AMG
TC59LM914AMG
TC59LM906AMG
LA2 DT2
BGA64
P-BGA64-1317-1
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Untitled
Abstract: No abstract text available
Text: IS43/46DR16160B 16Mx16 DDR2 DRAM PRELIMINARY INFORMATION NOVEMBER 2012 FEATURES DESCRIPTION • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle
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IS43/46DR16160B
16Mx16
18-compatible)
sS46DR16160B-37CBLA1
DDR2-533C
IS46DR16160B-37CBA1
-40oC
105oC,
105oC
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C101
Abstract: CTU4411 SN74CBTU4411 SN74CBTU4411GSTR
Text: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias
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SN74CBTU4411
11BIT
SCDS192
000-V
A114-B,
SN74plifiers
C101
CTU4411
SN74CBTU4411
SN74CBTU4411GSTR
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IS43DR82560B
Abstract: IS46DR16128B IS43DR16128B-25EBLI IS46DR16128B-3DBLA1 IS43DR16128B-25EBL
Text: IS43/46DR82560B IS43/46DR16128B 256Mx8, 128Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)
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IS43/46DR82560B
IS43/46DR16128B
256Mx8,
128Mx16
18-compatible)
-40oC
DDR2-667D
IS46DR16128B-3DBLA1
IS46DR16128B-3DBA1
IS43DR82560B
IS46DR16128B
IS43DR16128B-25EBLI
IS43DR16128B-25EBL
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AS4C128M8D2
Abstract: No abstract text available
Text: AS4C128M8D2 128M x 8 bit DDRII Synchronous DRAM SDRAM Confidential Advanced (Rev. 1.0, Jun. /2013) Features Overview • JEDEC Standard Compliant JEDEC standard 1.8V I/O (SSTL_18-compatible) Power supplies: VDD & VDDQ = +1.8V 0.1V Operating temperature range
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AS4C128M8D2
18-compatible)
AS4C128M8D2
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Untitled
Abstract: No abstract text available
Text: IDT74SSTU32865 28-BIT 1:2 REGISTERED BUFFER WITH PARITY COMMERCIAL TEMPERATURE RANGE 28-BIT 1:2 REGISTERED BUFFER WITH PARITY FEATURES: IDT74SSTU32865 DESCRIPTION: • • • • • • • 1.8V Operation SSTL_18 style clock and data inputs Differential CLK input
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IDT74SSTU32865
28-BIT
100mA
MIL-STD-883,
200pF,
160-pin
SSTU32865
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is43dr32800a
Abstract: IS43DR32801A DDR2 SDRAM IS46DR32801A-5BBLA2
Text: IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)
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IS43DR32800A,
IS43/46DR32801A
8Mx32
256Mb
18-compatible)
-40oC
DDR2-400B
IS46DR32801A-5BBLA1
is43dr32800a
IS43DR32801A
DDR2 SDRAM
IS46DR32801A-5BBLA2
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Untitled
Abstract: No abstract text available
Text: SN74SSTU32864D 25-BIT CONFIGURABLE REGISTERED BUFFER WITH SSTL_18 INPUTS AND OUTPUTS www.ti.com SCES623A – FEBRUARY 2005 – REVISED APRIL 2005 FEATURES • • • • • • Member of the Texas Instruments Widebus+ Family Pinout Optimizes DDR2 DIMM PCB Layout
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SN74SSTU32864D
25-BIT
SCES623A
14-Bit
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP1270AMP 2.5A SINK/SOURCE BUS TERMINATION REGULATOR FEATURES DESCRIPTIOON Ideal for DDR-I, DDR-II and DDR-III VTT Applications Sink and Source up to 2.5Amp Integrated Power MOSFETs Generates Termination Voltage for SSTL_2, SSTL_18,
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AP1270AMP
AP1270AMP
125oC
75oC/W
1270AMP
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EM44BM1684LBA
Abstract: bga 84 BGA84 BGA-84 DDR2-667 em44bm1684lba-3f
Text: eorex EM44BM1684LBA 512Mb 8Mx4Bank×16 Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ=1.8V ± 0.1V. • All inputs and outputs are compatible with SSTL_18 interface. • Fully differential clock inputs (CK,/CK) operation. • 4 Banks
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EM44BM1684LBA
512Mb
BGA-84
EM44BM1684LBA
bga 84
BGA84
DDR2-667
em44bm1684lba-3f
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Untitled
Abstract: No abstract text available
Text: IS43/46DR86400D IS43/46DR16320D 64Mx8, 32Mx16 DDR2 DRAM APRIL 2014 FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)
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IS43/46DR86400D
IS43/46DR16320D
64Mx8,
32Mx16
18-compatible)
DDR2-800D
IS46DR16320D-25DBLA2
DDR2-667D
IS46DR16320D-3DBLA2
IS43/46DR86400D,
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AS4C64M8D2
Abstract: No abstract text available
Text: AS4C64M8D2 512M – 64M x 8 bit DDRII Synchronous DRAM (SDRAM) Confidential (Rev. 1.0, Feb. /2014) Features Overview • JEDEC Standard Compliant JEDEC standard 1.8V I/O (SSTL_18-compatible) Power supplies: VDD & VDDQ = +1.8V 0.1V Operating temperature: 0 – 95 °C
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AS4C64M8D2
18-compatible)
AS4C64M8D2
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PI74
Abstract: PI74SSTU32866 Q13A SN74SSTU32866 SSTU32866
Text: PI74SSTU32866 25-bit 1:1 or 14-bit 1:2 Configurable Registered Buffer with Parity Product Features Product Description • PI74 SSTU32866 is designed for low-voltage operation, VDD = 1.8V • Supports Low Power Standby Operation • All Inputs are SSTL_18 Compatible, except RST, C0, C1,
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PI74SSTU32866
25-bit
14-bit
SSTU32866
PS8739
PI74
PI74SSTU32866
Q13A
SN74SSTU32866
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Untitled
Abstract: No abstract text available
Text: IS43/46DR32160C 16Mx32 512Mb DDR2 DRAM FEATURES ADVANCED INFORMATION OCTOBER 2010 DESCRIPTION • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)
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IS43/46DR32160C
16Mx32
512Mb
18-compatible)
-40oC
DDR2-400B
IS46DR32160C-5BBLA1
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