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    ST DARLINGTON TRANSISTOR Search Results

    ST DARLINGTON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ULN2003ANS Texas Instruments High-Voltage, High-Current Darlington Transistor Arrays 16-SO Visit Texas Instruments Buy
    ULQ2003ADRG4 Texas Instruments Darlington Transistor Arrays 16-SOIC Visit Texas Instruments
    ULQ2003ADG4 Texas Instruments Darlington Transistor Arrays 16-SOIC Visit Texas Instruments Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    ST DARLINGTON TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BDW42

    Abstract: No abstract text available
    Text: ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose and Low Speed Switching Application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage VCEO 100 V Collector Base Voltage


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    BDW42 O-220 BDW42 PDF

    BDW47

    Abstract: No abstract text available
    Text: ST BDW47 PNP Silicon Planar Darlington Power Transistor General purpose and low speed switching application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage


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    BDW47 O-220 BDW47 PDF

    BDW47

    Abstract: No abstract text available
    Text: ST BDW47 PNP Silicon Planar Darlington Power Transistor General purpose and low speed switching application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage


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    BDW47 O-220 BDW47 PDF

    BDW42

    Abstract: No abstract text available
    Text: ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose and Low Speed Switching Application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage VCEO 100 V Collector Base Voltage


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    BDW42 O-220 BDW42 PDF

    BDW47

    Abstract: No abstract text available
    Text: ST BDW47 PNP Silicon Planar Darlington Power Transistor General Purpose Application and Low Speed Switching TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage -VCBO 100 V


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    BDW47 O-220 250ms BDW47 PDF

    BDW42

    Abstract: No abstract text available
    Text: ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose and Low Speed Switching Application TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage VCEO 100 V Collector Base Voltage VCBO 100 V


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    BDW42 O-220 250ms BDW42 PDF

    BDW42

    Abstract: No abstract text available
    Text: ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose Application and Low Speed Switching TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage VCEO 100 V Collector Base Voltage VCBO 100 V


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    BDW42 O-220 250ms BDW42 PDF

    BDW47

    Abstract: No abstract text available
    Text: ST BDW47 PNP Silicon Planar Darlington Power Transistor General Purpose Application and Low Speed Switching TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage -VCBO 100 V


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    BDW47 O-220 250ms BDW47 PDF

    BDW47

    Abstract: No abstract text available
    Text: ST BDW47 PNP Silicon Planar Darlington Power Transistor General Purpose and Low Speed Switching Application TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage -VCBO 100 V


    Original
    BDW47 O-220 250ms BDW47 PDF

    BDW42

    Abstract: No abstract text available
    Text: ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose Application and Low Speed Switching TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage VCEO 100 V Collector Base Voltage VCBO 100 V


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    BDW42 O-220 250ms BDW42 PDF

    4410b

    Abstract: 2n6043 2N6044 2N6045
    Text: 3875081 G E SOLID ST ATE 01 d F Ï 3Û7SDÔ1 DQlVEEb b T d Darlingion Power Transistors ;_ 5 _ T- J J 5 _ File Number 1151 2N6043, 2N6044, 2N6045 TERMINAL DESIGNATIONS 8-Ampere N-P-N Darlington Power Transistors


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    2N6043, 2N6044, 2N6045 100-Volts, 2N6044) 2N6045) O-220AB 4410b 2n6043 2N6044 2N6045 PDF

    diode e106

    Abstract: tipl 750 TIPL785A
    Text: TEXAS INSTR -£OPTO> bE Ï F | flìblTEh GD37113 fi |~~ T -3 3 -2 9 Ö961726 TEXAS IN ST R 62C_37113 COPTO TIPL785, TIPL785A, TIPL790;TIPL790A N-P-N MONOLITHIC DARLINGTON CONNECTED SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED OCTOBER 1984 • Rugged Epitaxial Planar Construction


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    GD37113 TIPL785, TIPL785A, TIPL790 TIPL790A TIPL790 IPL785A, TIPL790A T1PL790, diode e106 tipl 750 TIPL785A PDF

    T1P112

    Abstract: No abstract text available
    Text: b2 TE XA S IN ST R -COPTO} DE? ûlfcilTEb DG3bflfl2 t. 89 61726 TEXAS INSTR <OPTO) 62C 36882 TIPT10, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed for Complementary Use With T IP 115, T IP 116, T IP 117


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    TIPT10, TIP111, TIP112 T-33-29 T1P112 PDF

    VQC10

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 IS SU E 2 - SEPTEM BER 1995 FEA TU RES * 2A CONTINUOUS CURRENT * FA ST SW ITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COM PLEM ENTARY TYPE - FZT604 PART MARKING D ETAIL FZT704 •= ABSOLUTE MAXIMUM RATINGS.


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    OT223 FZT704 FZT604 FZT705 Tamb-25 VQC10 PDF

    KD524503

    Abstract: KD524S03
    Text: BTE D POtilEREX INC • TSTMbEl GD0m3b □ H P R X ' - ' 3 3 - 3 ST mNEREX KD524503 Powerex, Inc., HIIUs Street, Voungwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Dual Darlington


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    BP107, KD524503 Amperes/600 KD524S03 PDF

    PS2002B

    Abstract: PS2002 transistor replacement 0z99
    Text: NEC PHOTO COUPLER BfCTRON OEVICE PS2002B PHOTO CO U PLER IN D U ST R IA L U SE -N EP O C SERIES - DESCRIPTION The PS2002B is an optically coupled isolator containing a GaAsP light emitting diode and an NPN silicon darlington- connect­ ed phototransistor.


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    PS2002B PS2002B -L50- 2500VDC 100ft 100il Ul/10 PS2002 transistor replacement 0z99 PDF

    TA8349

    Abstract: 2N6383 RCA TA8348 2N6384 2N6385 RCA 2n6385 2N6384 RCA
    Text: 3875081 G E SOLID ST AT E 01 1 > F | 3Ô7S0Û1 0G17243 fi File Number 609 ¿ y -*? 2N6383, 2N6384, 2N6385 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS c Features: • ■ {FLANGE I Operates from 1C w ithout predriver


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    0G17243 2N6383, 2N6384, 2N6385 10-Ampere 2N6385* 0D17S47 TA8349 2N6383 RCA TA8348 2N6384 2N6385 RCA 2n6385 2N6384 RCA PDF

    D1499

    Abstract: emitter phototransistor til 31 TIL119A TIL113 TL113
    Text: TIL113, TIL119A OPTOCOUPLERS D 1 4 9 9 , AU G U ST 1 9 8 1 -R E V IS E D JUNE 1989 Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Darlington-Connected Phototransistor High Direct-Current Transfer Ratio . . . 300% Minimum at 10 mA


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    TIL113, TIL119A D1499, 1981-REVISED 1500-Volt TIL113 D1499 emitter phototransistor til 31 TL113 PDF

    2SB1093

    Abstract: 04 ow
    Text: SEC l i T / '> 1J =1 > h Si l i con Tr ansi st or i i O 2SB1093 PNPx t a > '> * .? PNP Silicon Epitaxial Darlington Transistor Low Frequency Power Amplifier, Low Speed Switching ftW m / P A C K A G E DIMENSIONS 2 S B 1 0 9 3 iin ij > h y Y ÿ y ì? x 9 -e,


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    2SB1093 2SB1093ii R2-500 35SISS 2SB1093 04 ow PDF

    TIP665

    Abstract: 2N6128 TIP663 TIP664 tip66 TIP6 P66S
    Text: TEXAS IN ST R hS -COPTO} 8961726 TEXAS I NSTR D lf| □ □ 3 b cl ci 0 COPTO 62C 3 6 9 9 0 D TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONIMECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1 9 8 4 • 15 0 W at 1 0 0 °C Case Temperature T-33-29 2 0 A Continuous Collector Current


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    TIP663, TIP664, TIP665 hFE-250 T-33-29 TIP663 TIP664 7526s TIP665 2N6128 tip66 TIP6 P66S PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MP4513 TOSHIBA PO W ER TRANSISTOR M ODULE as 1 3 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 M P •v ■ ■ ■ v ■ mm HIGH PO W ER SWITCHING APPLICATIONS. IN D U ST R IA L A PPLIC A TIO N S U nit in mm HAM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD


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    MP4513 PDF

    Untitled

    Abstract: No abstract text available
    Text: TEX A S IN S T R -COPTO} bE 8961726 TEXAS De | f l i b l T a t IN ST R OPTO □□37Dcic1 T 62C 3 7 0 9 9 TIPL775, TIPL775A N-P-f\l MONOLITHIC DARLINGTON-CONNECTED SILICON POWER TRANSISTORS OCTOBER 1982 - R EV ISED O CTOBER 1984 T ^ 3 3 — 29^ Specifically Designed For Low-Loss, High-Current, High-Speed


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    37Dcic TIPL775, TIPL775A 00371D4 PDF

    Untitled

    Abstract: No abstract text available
    Text: h ~ 7 > y Z 5 t / Tr ansi st or s 2SD1647 2SD1647 NPN y 'J b> ' JI>j£ii:fritlliffl/Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • a S4 SI V 'A 'd l-r • ^ i-J f^ ^ H /D im e n s io n s U n it: mm : — x falic 60 V co " j x 1~


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    2SD1647 PDF

    TT 2076

    Abstract: UDN2841 UDN2845 PNP DARLINGTON SINK DRIVER 7626S
    Text: TEXAS INSTR -CLIN/IN TFO il 8961724 TEXAS INSTR d ËT| LIN/INTFC 0^17214 0075130 9 1 D 75938 UD N 2 B 41, UDN2845 Q U AD R U PLE HIGH-CURRENT DARLINGTON DRIVERS D 2 5 0 7 , DECEM BER 1 9 8 0 - R E V IS E 0 A U G U ST 1986 • For Use with Negative Supplies


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    UDN2841, UDN2845 D2507, 1980-REVISE0 UDN2841 UDN2845 TT 2076 UDN2841 PNP DARLINGTON SINK DRIVER 7626S PDF