Untitled
Abstract: No abstract text available
Text: SKKT 15, SKKH 15 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 0 Thyristor / Diode Modules LMNO LMMO= LDMO L XVV ¥VV TAVV TBVV L @VV UVV TCVV TRVV PISL Q TB S G*2 > TUVW I5 Q XB YEH NZZI TB[V@? NZZ$ TB[V@? NZZI TB[VU? NZZ$ TB[VU? NZZI TB[TC? NZZ$ TB[TC? NZZI TB[TR?
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SRK2000
Abstract: DIODE C502 SRK2000D AN2644 ic U501 330 smd AN3303 d502A STL85N6F3 stl140n4
Text: AN3303 Application note Secondary-side rectification for an LLC resonant converter featuring the SRK2000 Introduction The EVLSRK2000 is a family of demonstration boards designed for the evaluation of the SRK2000 in LLC resonant converters with synchronous rectification SR .
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AN3303
SRK2000
EVLSRK2000
SRK2000
DIODE C502
SRK2000D
AN2644
ic U501
330 smd
AN3303
d502A
STL85N6F3
stl140n4
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Untitled
Abstract: No abstract text available
Text: VN02N High side smart power solid state relay Features Type VDSS RDS on IOUT VCC VN02N 60 V 0.4 Ω 6A 26 V • Output current (continuous): 6A @ Tc=25°C ■ 5V logic level compatible input ■ Thermal shutdown ■ Under voltage shutdown ■ Open drain diagnostic output
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VN02N
VN02N
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HDR1X4
Abstract: AN3115 smd diode BAT43 HDR1X2 HDR1X3 BAT43 1n4148 bat43 W 1206 package MHDR1X2 HDR1X diseqc
Text: AN3115 Application note LNB power supply based on the LNBH23L supply and control IC with step-up and I²C interface Introduction This application note is intended to provide additional information and suggestions for the correct use of the LNBH23L device. All waveforms shown are based on the demonstration
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AN3115
LNBH23L
LNBH23L
STEVAL-CBL007V1
HDR1X4
AN3115
smd diode BAT43
HDR1X2
HDR1X3
BAT43 1n4148
bat43 W 1206 package
MHDR1X2
HDR1X
diseqc
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Untitled
Abstract: No abstract text available
Text: VND05BSP Iso high side smart power solid state relay Features Type VDSS RDS on IOUT VCC VND05BSP 40 V 0.2 Ω 1.6A 26 V 10 1 • Output current (continuous): 9A @ Tc=85°C ■ 5V logic level compatible input ■ Thermal shutdown ■ Under voltage shutdown
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VND05BSP
PowerSO-10
VND05BSP
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smd diode BAT43
Abstract: PSSO-24 AN2713 DiSEqC 1.0 / 1.1 ZENER A62 SMD DIODE 1N4007 DATASHEET pin configuration diode 1N4007 A35 SMD smd package 1N5819 1n5819 smd
Text: AN2713 Application note LNB power supply based on the LNBH23 supply and control IC with step-up and I²C interface Introduction This application note is intended to provide additional information and suggestions for the correct use of the LNBH23 device. All waveforms shown are based on the demonstration
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AN2713
LNBH23
STEVAL-CBL003V1)
smd diode BAT43
PSSO-24
AN2713
DiSEqC 1.0 / 1.1
ZENER A62
SMD DIODE 1N4007 DATASHEET
pin configuration diode 1N4007
A35 SMD
smd package 1N5819
1n5819 smd
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Untitled
Abstract: No abstract text available
Text: VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY Figure 1. Package Table 1. General Features Type VDSS RDS on IOUT VCC VN16BPS 40 V 0.06 Ω 5.6 A 26 V • MAXIMUM CONTINUOUS OUTPUT CURRENT: 20 A @ Tc= 85°C ■ 5V LOGIC LEVEL COMPATIBLE INPUT ■ THERMAL SHUT-DOWN
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VN16BSP
VN16BPS
PowerSO-10
VN16BPS
DocID1088
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Untitled
Abstract: No abstract text available
Text: VN05N High side smart power solid state relay Features Type VDSS RDS on IOUT VCC VN05N 60 V 0.18 13 A 26 V • Output current (continuous): 13A @ Tc=25°C ■ 5V logic level compatible input ■ Thermal shutdown ■ Under voltage shutdown ■ Open drain diagnostic output
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VN05N
VN05N
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LC75853E
Abstract: LC75853 LED display for radio AUTO SEARCH TUNING FM RADIO RECEIVER sanyo fm front end 8818 S356A
Text: Ordering number : EN*4743A CMOS LSI LC7233N-8818 Single-Chip PLL and Controller with LCD Driver Preliminary Overview Package Dimensions The LC7233N-8818 is a single-chip electronic tuning microcontroller that supports control of an electronic tone/volume control IC the LC7538JMD and handles
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LC7233N-8818
LC7233N-8818
LC7538JMD)
LC75853E/W
3159-QFP64E
LC7233N-8818]
LC7233N,
LC7538JMD
LC75853E
LC75853
LED display for radio
AUTO SEARCH TUNING FM RADIO RECEIVER
sanyo fm front end
8818
S356A
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VN920
Abstract: ISO7637 VN920B5-E VN920-E VN920SO-E F1823
Text: VN920-E Single-channel high side driver Features Type RDS on IOUT VCC VN920-E VN920-12-E 16 mΩ 30 A 36 V PENTAWATT • CMOS compatible input ■ Proportional load current sense ■ Shorted load protection ■ Under voltage and overvoltage shutdown ■ Overvoltage clamp
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VN920-E
VN920-12-E
2002/95/ec
VN920-E
VN920
ISO7637
VN920B5-E
VN920SO-E
F1823
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1SV28
Abstract: No abstract text available
Text: 1SV286 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE 1 SV2 8 6 Unit in mm High Capacitance Ratio : C2V ! C20V = 8-9 TYP. Low Series Resistance : rs = 0.730 (TYP.) Useful for Small Size Tuner. •
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1SV286
0014g
1SV28
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HN2D01F
Abstract: lu2b
Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. • +0.2 2.8 - 0.3 +0.2 1.6-0.1 H N 2D01F is composed of 3 independent diodes. • Low Forward Voltage • F a st Reverse Recovery Time : trr = 1.6ns Typ.
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HN2D01F
HN2D01F
961001EAA2'
lu2b
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1SV286
Abstract: C20V
Text: TOSHIBA 1SV286 1 SV2 8 6 TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2V / C20V = 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner.
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1SV286
C2y/C20V
0014g
f-470MHz
C20V
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1SV286
Abstract: C20V
Text: TOSHIBA 1SV286 1 SV2 8 6 TOSHIBA VARIABLE CAPACITANCE DIODE CATV CONVERTER 1'st OSC TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2V / C20V = 8-9 TYP. • Low Series Resistance : rs = 0.730 (TYP.) • Useful for Small Size Tuner.
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1SV286
C2y/C20V
10kil)
0014g
f-470MHz
1SV286
C20V
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PS2002B
Abstract: PS2002 transistor replacement 0z99
Text: NEC PHOTO COUPLER BfCTRON OEVICE PS2002B PHOTO CO U PLER IN D U ST R IA L U SE -N EP O C SERIES - DESCRIPTION The PS2002B is an optically coupled isolator containing a GaAsP light emitting diode and an NPN silicon darlington- connect ed phototransistor.
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PS2002B
PS2002B
-L50-
2500VDC
100ft
100il
Ul/10
PS2002
transistor replacement
0z99
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OE R611
Abstract: No abstract text available
Text: 3R3TI30E-080 4 st — K •U " 'f ' J X ^ i l — ;u : Outline Drawings DIODE and TYRISTOR MODULE • 4 # d i ■ Features • ^ ^ ^ ' < ' > ^ — '> 3 • 7 ^ Glass Passivation Chip Easy Connection • i&fi&ffi Insulated Type » <i T«.0 1 O.i 1 ».D i t
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3R3TI30E-080
I95t/R89)
OE R611
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C 5388
Abstract: A-128 ERB38 T151 T460 T760 T810 T930 pic t460
Text: ERB38 o .8A re) : Outline Drawings f4 * - Y FA ST RECOVERY DIODE 1 0.8 28MIN 28MIN- Features Super high speed sw itching : Marking \tjz A5-3-K: ö Color code : White Low VF in turn on • a t s ia t t «5£ » £ Abridged type name H igh reliability Voltage class
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ERB38
30S3-^
eaTa30
I95t/R89)
Shl50
C 5388
A-128
T151
T460
T760
T810
T930
pic t460
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2D01 FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 2 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • H N 2 D 0 1 FU is composed of 3 independent diodes. • Low Forw ard Voltage • Fa st Reverse Recovery Tim e : tr r = 1.6ns Typ.
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HN2D01
01//F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP598G T O SH IB A PHO TOCO UPLER PHOTO RELAY TLP598G Unit in mm T EL E C O M M U N IC A T IO N D A T A A C Q U ISIT IO N M E A SU R E M E N T IN ST R U M EN T AT IO N The TOSHIBA TLP598G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a
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TLP598G
TLP598G
11-9A1
UL1577,
E67349
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP598B T O S H IB A PH O T O C O U PLER PH O TO R ELA Y TLP598B TELE C O M M U N IC A T IO N U nit in mm D ATA A C Q UISITIO N M E A S U R E M E N T IN ST R U M EN T A TIO N The TO SH IBA TLP598B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS F E T in a
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TLP598B
TLP598B
200mA
2500Vrms
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50-08N
Abstract: 50-12N03 50-08N03 50-16N 50-18N03 50-18N vuo 50-08N03
Text: 4bñb22b DODICI OQl « I X Y □IXYS VUO 50 IdAV = 58 A VRRM = 800-1800 V Three Phase Rectifier Bridges V RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type fet F ti "it VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* I—► —
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50-08N03
50-12N03
50-14N03
50-16N03
50-18N03*
50-08N
50-16N
50-18N03
50-18N
vuo 50-08N03
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Untitled
Abstract: No abstract text available
Text: n ix Y S VUM 33-05 Power MOSFET Stage for Boost Converters I d 25 V Ds s R DS on Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 Type • VUM 33-05N v DSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kfì Continuous
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33-05N
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Untitled
Abstract: No abstract text available
Text: nixY S VUM 24-05 Power MOSFET Stage for Boost Converters ^D25 V Dss ^D S o n Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 T ype I v DSS V DGR V GS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 k fì Continuous A A A 170 W
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tea 2030
Abstract: K851 S72 MOS TC-6101 MP 6101 2SK704 S300
Text: M O S Field Effect P ow er Transistor 2SK704 N f t ^ ^ '7 -M O S X 4 'y * - > FET ? m l i f f l 2SK704 lì, F E T T , 5 V B ? g # J C <0 x 4 -v & > th tn z ^ h t , w mm m x t- t. x ^ i -y-f > i — VU S 4 \\ y> -f<7)M'ffî l~f t T to f t m O f & t > ffiÎJÏT '^ o
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2SK704
2SK704
tea 2030
K851
S72 MOS
TC-6101
MP 6101
S300
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