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    ST MICROELECTRONICS MOSFET AUTOMOTIVE Search Results

    ST MICROELECTRONICS MOSFET AUTOMOTIVE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GCM31CC71C226ME36K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GCM32D5C3A472JX01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GCM32D5C3A682GX01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GCM32E5C3A103FX01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    ST MICROELECTRONICS MOSFET AUTOMOTIVE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    GRM31CR71A106KA01B

    Abstract: BAT 49 P-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V 12061C104KAT2A MAX6397 MAX6397EVKIT voltage regulator with current limiter with mosfet 100v input regulator adjustable regulator out up to 100v mosfet current limiter
    Text: 19-4003; Rev 2; 5/06 MAX6397 Evaluation Kit The MAX6397 evaluation kit EV kit demonstrates a high-voltage overvoltage protection circuit for automotive applications that must survive load dump and highvoltage transient conditions. This EV kit is a fully assembled and tested surface-mount board.


    Original     		MAX6397 100mA, MAX6397 GRM31CR71A106KA01B BAT 49 P-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V 12061C104KAT2A MAX6397EVKIT voltage regulator with current limiter with mosfet 100v input regulator adjustable regulator out up to 100v mosfet current limiter PDF

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor PDF

    P40NE

    Abstract: p40ne0 p40ne03l p40ne03l-20 P40NE03 STP40NE03L-20 st microelectronics MOSFET automotive
    Text: STP40NE03L-20 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V DSS R DS on ID ST P40NE03L-20 30 V <0.020 Ω 40 A • ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE A 100 oC APPLICATION ORIENTED


    Original     		STP40NE03L-20 P40NE03L-20 P40NE p40ne0 p40ne03l p40ne03l-20 P40NE03 STP40NE03L-20 st microelectronics MOSFET automotive PDF

    K10N06FM

    Abstract: sot82fm vnd10n06 SGS-Thomson mosfet ipak
    Text: VND10N06/VND10N06-1 VNP10N06FI/K10N06FM "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VND10N06 VND10N06-1 VNP10N06FI VNK10N06FM Vclamp 60 60 60 60 V V V V R DS on 0.3 0.3 0.3 0.3 Ω Ω Ω Ω I lim 10 10 10 10 A A A A 3 • ■ ■ ■ ■ ■ ■ ■


    Original     		VND10N06/VND10N06-1 VNP10N06FI/K10N06FM VND10N06 VND10N06-1 VNP10N06FI VNK10N06FM O-252 O-251 VND10N06, VND10N06-1, K10N06FM sot82fm SGS-Thomson mosfet ipak PDF

    D20NE03L

    Abstract: D20NE STD20NE03L SGS-Thomson mosfet ipak
    Text: STD20NE03L N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V DSS R DS on ID ST D20NE03L 30 V < 0.020 Ω 20 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE A 100 oC


    Original     		STD20NE03L D20NE03L O-251 O-252 D20NE03L D20NE STD20NE03L SGS-Thomson mosfet ipak PDF

    Untitled

    Abstract: No abstract text available
    Text: / T T S G S -T H O M S O N * 7 M , H D i[L i g ìrM D (g @ T D 230 ELECTRONIC CIRCUIT BREAKER . TWO N-CHANNEL MOSFETs CONTROL AND DUAL INDEPENDANT CURRENT SUPERVI­ SION FOR OVER CURRENT PROTECTION . DUAL SUPPLY OPERATION . FROM +3/-5 TO +18/-18V OPERATING VOLT­


    OCR Scan     		18/-18V TD230 PDF

    PCF 7953

    Abstract: J-Link-ARM-KS viper12a application note viper12 design AN3165 smd code capacitor color lcd inverter board schematic tyco igbt sine wave inverter schematic and firmware SMD CAPACITORS color code
    Text: UM0877 User manual 1.4 kW digital power factor corrector based on the STM32F103ZE Introduction This system has been designed to evaluate the capabilities of the high-density STM32F103ZE microcontroller to perform a digital power factor corrector. An application


    Original     		UM0877 STM32F103ZE STM32F103ZE STM32 PCF 7953 J-Link-ARM-KS viper12a application note viper12 design AN3165 smd code capacitor color lcd inverter board schematic tyco igbt sine wave inverter schematic and firmware SMD CAPACITORS color code PDF

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 PDF

    P80NE03L-06

    Abstract: p80ne03 p80ne0 P80NE P80NE03L STP80NE03L-06 st microelectronics MOSFET 2000 p80ne03l06
    Text: STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE V DSS R DS o n ID ST P80NE03L-06 30 V < 0.006 Ω 80 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


    Original     		STP80NE03L-06 P80NE03L-06 O-220 P80NE03L-06 p80ne03 p80ne0 P80NE P80NE03L STP80NE03L-06 st microelectronics MOSFET 2000 p80ne03l06 PDF

    W80NE06-10

    Abstract: STW80NE06-10 TH10M
    Text: STW80NE06-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V DSS R DS on ID ST W80NE06-10 60 V <0.01 Ω 80 A • ■ ■ ■ TYPICAL RDS(on) = 0.0085 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED


    Original     		STW80NE06-10 W80NE06-10 O-247 W80NE06-10 STW80NE06-10 TH10M PDF

    P22NE

    Abstract: P22NE03L P22NE0 p22ne03 STP22NE03L
    Text: STP22NE03L N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE ST P22NE03L • ■ ■ ■ ■ V DSS R DS o n ID 30 V < 0.05 Ω 22 A TYPICAL RDS(on) = 0.034 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


    Original     		STP22NE03L P22NE03L O-220 P22NE P22NE03L P22NE0 p22ne03 STP22NE03L PDF

    P50NE08

    Abstract: p50ne P50ne0 K 3850 N Mosfet Power st microelectronics MOSFET automotive k 3850
    Text: STP50NE08 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST P50NE08 • ■ ■ ■ ■ V DSS R DS on ID 80 V <0.024 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		STP50NE08 P50NE08 O-220 P50NE08 p50ne P50ne0 K 3850 N Mosfet Power st microelectronics MOSFET automotive k 3850 PDF

    P80NE06

    Abstract: p80ne06-10 p80ne0 P80NE p80ne06.10
    Text: STP80NE06-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST P80NE06-10 • ■ ■ ■ V DSS R DS on ID 60 V <0.01 Ω 80 A TYPICAL RDS(on) = 0.0085 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED


    Original     		STP80NE06-10 P80NE06-10 O-220 P80NE06 p80ne06-10 p80ne0 P80NE p80ne06.10 PDF

    B80NE06

    Abstract: B80NE06-10 b80ne
    Text: STB80NE06-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST B80NE06-10 • ■ ■ ■ ■ V DSS R DS on ID 60 V <0.01 Ω 80 A TYPICAL RDS(on) = 0.0085 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED


    Original     		STB80NE06-10 B80NE06-10 O-263 B80NE06 B80NE06-10 b80ne PDF

    320 5400

    Abstract: STB60NE03L-10 b60ne airbag
    Text: STB60NE03L-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE V DSS R DS o n ID ST B60NE03L-10 30 V < 0.010 Ω 60 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.007 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


    Original     		STB60NE03L-10 B60NE03L-10 O-263 320 5400 STB60NE03L-10 b60ne airbag PDF

    STB40NE03L-20

    Abstract: No abstract text available
    Text: STB40NE03L-20 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE • ■ ■ ■ ■ V DSS R DS on ID TYPICAL RDS(on) = 0.014 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE A 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT


    Original     		STB40NE03L-20 O-263 STB40NE03L-20 PDF

    P60ne

    Abstract: P60NE0 P60NE03L-10 p60n P60NE03 STP60NE03L-10 P60NE03L-1
    Text: STP60NE03L-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE V DSS R DS o n ID ST P60NE03L-10 30 V < 0.010 Ω 60 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.007 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


    Original     		STP60NE03L-10 P60NE03L-10 O-220 P60ne P60NE0 P60NE03L-10 p60n P60NE03 STP60NE03L-10 P60NE03L-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB50NE08 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST B50NE08 • ■ ■ ■ ■ ■ V DSS R DS on ID 80 V <0.024 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		STB50NE08 B50NE08 O-263 PDF

    p80ne0

    Abstract: P80NE03L-06 P80NE p80ne03 st microelectronics MOSFET 2000 STP80NE03L-06 st microelectronics MOSFET automotive P80NE03L
    Text: STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS o n ID ST P80NE03L-06 30 V < 0.006 Ω 80 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STP80NE03L-06 P80NE03L-06 O-220 p80ne0 P80NE03L-06 P80NE p80ne03 st microelectronics MOSFET 2000 STP80NE03L-06 st microelectronics MOSFET automotive P80NE03L PDF

    morocco B80NE03L

    Abstract: STB80NE03L-06 st microelectronics MOSFET automotive B80NE03L
    Text: STB80NE03L-06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE V DSS R DS o n ID ST B80NE03L-06 30 V < 0.006 Ω 80 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


    Original     		STB80NE03L-06 B80NE03L-06 O-263 morocco B80NE03L STB80NE03L-06 st microelectronics MOSFET automotive B80NE03L PDF

    IRF540 p-channel MOSFET

    Abstract: of IRF9540 and IRF540 IRF540 p-channel MOSFET pin out Max6495 6-TDFN-EP M1IRF540 12061C104KAT2A MOSFET IRF540 CMPZ5248B MAX6495 SMBJ54A
    Text: 19-4002; Rev 2; 12/06 MAX6495 Evaluation Kit The MAX6495 evaluation kit EV kit demonstrates a high-voltage overvoltage protection circuit for automotive applications that must survive load dump and highvoltage transient conditions. This EV kit is a fully assembled and tested surface-mount board.


    Original     		MAX6495 MAX6495 IRF540 p-channel MOSFET of IRF9540 and IRF540 IRF540 p-channel MOSFET pin out Max6495 6-TDFN-EP M1IRF540 12061C104KAT2A MOSFET IRF540 CMPZ5248B SMBJ54A PDF

    VN770

    Abstract: No abstract text available
    Text: VN770 QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS PRELIMINARY DATA T YPE VN770 R DS on * I OUT V CC 0.240 Ω 9 A 26 V * Total resistance of one side in bridge configuration • ■ ■ ■ ■ ■ ■ IDEAL AS A LOW VOLTAGE BRIDGE


    Original     		VN770 VN770 SO-28 PDF

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice PDF