Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ST MOSFET Search Results

    ST MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    ST MOSFET Price and Stock

    ICO Rally STS-#1

    P-channel -30 V, 0.01 Ohm typ., -12.5 A, STripFET H6 Power MOSFET in a SO-8 package
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com STS-#1
    • 1 -
    • 10 -
    • 100 $4.94
    • 1000 $4.94
    • 10000 $1.77
    		Buy Now

    ICO Rally STS-7

    P-channel 40 V, 0.0175 Ohm typ., 7 A STripFET F6 Power MOSFET in a SO-8 package
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com STS-7
    • 1 -
    • 10 -
    • 100 $2.743
    • 1000 $2.743
    • 10000 $0.974
    		Buy Now

    ST MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AD5327

    Abstract: ST7540 reference design HC49SR schematic design for home automation using plc UM0240 L5973d application note EVAL6207N B0603 ST7538 L5973D
    Text: UM0240 User manual ST Industrial Communication Board - EVALCOMMBOARD Introduction ST Industrial Communication Board order code: EVALCOMMBOARD is a platform for Communication, Command and Control exchange with Industrial reference design boards. Its goal is to provide ST Industrial customers a reliable and easily accessible communication


    Original     		PDF UM0240 AD5327 ST7540 reference design HC49SR schematic design for home automation using plc UM0240 L5973d application note EVAL6207N B0603 ST7538 L5973D

    siemens simatic op17 manual

    Abstract: SIMATIC Field PG IPC547D Siemens s7 1200 manual IPC427C SIWATOOL RS232 Cable IPC677C siemens a5e00 MTBF SIEMENS electric motor S7-200 cpu 215
    Text: Siemens AG 2013 Products for Totally Integrated Automation SIMATIC Catalog ST 70 Edition 2013 Answers for industry. © Siemens AG 2013 Related catalogs Industrial Communication SIMATIC NET IK PI E86060-K6710-A101-B7-7600 SIMATIC HMI / ST 80/ST PC PC-based Automation


    Original     		PDF E86060-K6710-A101-B7-7600 80/ST E86060-K4680-A101-B9-7600 E86060-K4678-A111-B8-7600 E86060-K2410-A111-A8-7600 E86060-K8310-A101-A8-7600 E86060-K6850-A101-C3 P4-7600 siemens simatic op17 manual SIMATIC Field PG IPC547D Siemens s7 1200 manual IPC427C SIWATOOL RS232 Cable IPC677C siemens a5e00 MTBF SIEMENS electric motor S7-200 cpu 215

    P16NE06

    Abstract: p16ne06f P16NE06FP P16NE0 STP16NE06FP STP16NE06 ISD16 NS205 P16NE
    Text: STP16NE06 STP16NE06FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P16NE06 ST P16NE06FP 60 V 60 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP16NE06 STP16NE06FP P16NE06 P16NE06FP 175oC P16NE06 p16ne06f P16NE06FP P16NE0 STP16NE06FP STP16NE06 ISD16 NS205 P16NE

    P7NB40

    Abstract: P7NB40FP 0118mm b 0409 h MAX728
    Text: STP7NB40 STP7NB40FP  N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE ST P7NB40 ST P7NB40FP • ■ ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.9 Ω < 0.9 Ω 7.0 A 4.4 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STP7NB40 STP7NB40FP P7NB40 P7NB40FP P7NB40FP 0118mm b 0409 h MAX728

    P6NB50

    Abstract: P6NB50FP STP6NB50 STP6NB50FP
    Text: STP6NB50 STP6NB50FP  N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE ST P6NB50 ST P6NB50FP • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 1.5 Ω < 1.5 Ω 5.8 A 3.4 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STP6NB50 STP6NB50FP P6NB50 P6NB50FP P6NB50 P6NB50FP STP6NB50 STP6NB50FP

    p19nb20

    Abstract: P19NB20FP p19nb20 morocco p19nb2 STP19NB20 p19n p19nb l289 stp19nb20fp datasheet STP19NB20FP
    Text: STP19NB20 STP19NB20FP  N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V DSS R DS on ID ST P19NB20 ST P19NB20FP 200 V 200 V < 0.180 Ω < 0.180 Ω 19 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STP19NB20 STP19NB20FP P19NB20 P19NB20FP p19nb20 P19NB20FP p19nb20 morocco p19nb2 STP19NB20 p19n p19nb l289 stp19nb20fp datasheet STP19NB20FP

    P9NB60

    Abstract: P9NB60FP STP9NB60 STP9NB60FP
    Text: STP9NB60 STP9NB60FP  N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH MOSFET TYPE ST P9NB60 ST P9NB60FP • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 0.8 Ω < 0.8 Ω 9.0 A 9.0 A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP9NB60 STP9NB60FP O-220/TO220FP P9NB60 P9NB60FP P9NB60 P9NB60FP STP9NB60 STP9NB60FP

    P20NE06

    Abstract: P20NE06FP morocco p20ne06 STP20NE06FP transistor p20ne06 P20NE06FP application p20ne STP20NE06 ITS1200 p20ne06f
    Text: STP20NE06 STP20NE06FP  N - CHANNEL 60V - 0.07 Ω - 20A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P20NE06 ST P20NE06FP 60 V 60 V < 0.085 Ω < 0.085 Ω 20 A 13 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.07 Ω


    Original     		PDF STP20NE06 STP20NE06FP O-220/TO-220FP P20NE06 P20NE06FP 175oC P20NE06 P20NE06FP morocco p20ne06 STP20NE06FP transistor p20ne06 P20NE06FP application p20ne STP20NE06 ITS1200 p20ne06f

    P16NE06L

    Abstract: P16NE06 p16ne0 P16NE O220-F O-220F mosfet morocco 220 NK STP16NE06L P16NF06L
    Text: STP16NE06L STP16NE06L/FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TARGET DATA TYPE V DSS R DS on ID ST P16NE06L ST P16NE06LFP 60 V 60 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP16NE06L STP16NE06L/FP P16NE06L P16NE06LFP 175oC P16NE06L P16NE06 p16ne0 P16NE O220-F O-220F mosfet morocco 220 NK STP16NE06L P16NF06L

    STP45NE06ST

    Abstract: P45NE06 P45NE06FP
    Text: STP45NE06 STP45NE06FP  N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P45NE06 ST P45NE06FP 60 V 60 V < 0.028 Ω < 0.028 Ω 45 A 25 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.022 Ω


    Original     		PDF STP45NE06 STP45NE06FP O-220/TO-220FP P45NE06 P45NE06FP STP45NE06ST P45NE06 P45NE06FP

    W13NB60

    Abstract: h13nb60fi H13NB60 13nb60 STW13NB60 STH13NB60FI T218 sth13nb60fp BR 35 600-V H13NB60F
    Text: STW13NB60 STH13NB60FI  N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID ST W13NB60 ST H13NB60FI 600 V 600 V <0.54 Ω <0.54 Ω 13 A 8.6 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STW13NB60 STH13NB60FI O-247/ISOWATT218 W13NB60 H13NB60FI W13NB60 h13nb60fi H13NB60 13nb60 STW13NB60 STH13NB60FI T218 sth13nb60fp BR 35 600-V H13NB60F

    p5nb90

    Abstract: P5NB90FP STP5NB90FP STP5NB90
    Text: STP5NB90 STP5NB90FP N - CHANNEL 900V - 2.3 Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE ST P5NB90 ST P5NB90FP V DSS R DS on ID 900 V 900 V < 2.5 Ω < 2.5 Ω 5 A 5 A TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STP5NB90 STP5NB90FP O-220/TO-220FP P5NB90 P5NB90FP p5nb90 P5NB90FP STP5NB90FP STP5NB90

    P4NB50FP

    Abstract: P4NB50 SMPS SCHEMATIC DIAGRAM STP4NB50 STP4NB50FP p4nb5
    Text: STP4NB50 STP4NB50FP  N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE ST P4NB50 ST P4NB50FP • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STP4NB50 STP4NB50FP P4NB50 P4NB50FP P4NB50FP P4NB50 SMPS SCHEMATIC DIAGRAM STP4NB50 STP4NB50FP p4nb5

    p30ne06

    Abstract: STripFET P30NE0 P30NE STP30NE06 STP30NE06FP transistor K O220
    Text: STP30NE06 STP30NE06FP  N - CHANNEL 60V - 0.045 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P30NE06 ST P30NE06FP 60 V 60 V < 0.055 Ω < 0.055 Ω 30 A 17 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω


    Original     		PDF STP30NE06 STP30NE06FP O-220/TO-220FP P30NE06 P30NE06FP 175oC p30ne06 STripFET P30NE0 P30NE STP30NE06 STP30NE06FP transistor K O220

    H10NC60FI

    Abstract: W10NC60 10NC60 H10NC60F P025P h10nc60 STH10NC60FI STW10NC60
    Text: STW10NC60 STH10NC60FI  N - CHANNEL 600V - 0.65Ω - 10A - TO-247/ISOWATT218 PowerMESH ΙΙ MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST W10NC60 ST H10NC60F I 600 V 600 V < 0.75 Ω < 0.75 Ω 10 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.65 Ω


    Original     		PDF STW10NC60 STH10NC60FI O-247/ISOWATT218 W10NC60 H10NC60F H10NC60FI W10NC60 10NC60 P025P h10nc60 STH10NC60FI STW10NC60

    STP55NE06

    Abstract: P55NE06 P55NE morocco P55NE06 p55ne0 P55NE06FP STP55NE06FP
    Text: STP55NE06 STP55NE06FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V DSS R DS on ID ST P55NE06 ST P55NE06FP 60 V 60 V < 0.022 Ω < 0.022 Ω 55 A 30 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY


    Original     		PDF STP55NE06 STP55NE06FP P55NE06 P55NE06FP STP55NE06 P55NE06 P55NE morocco P55NE06 p55ne0 P55NE06FP STP55NE06FP

    P7NB30FP

    Abstract: P7NB30 STP7NB30 STP7NB30FP
    Text: STP7NB30 STP7NB30FP  N - CHANNEL 300V - 0.75Ω - 7A - TO-220/TO-220FP PowerMESH MOSFET TYPE ST P7NB30 ST P7NB30FP • ■ ■ ■ ■ V DSS R DS on ID 300 V 300 V < 0.90 Ω < 0.90 Ω 7 A 4 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP7NB30 STP7NB30FP O-220/TO-220FP P7NB30 P7NB30FP P7NB30FP P7NB30 STP7NB30 STP7NB30FP

    15NB50

    Abstract: H15NB50FI W15NB50 H15NB50 P025P ATT218 STW15NB50 STH15NB50FI
    Text: STW15NB50 STH15NB50FI  N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID ST W15NB50 ST H15NB50FI 500 V 500 V < 0.36 Ω < 0.36 Ω 14.6 A 10.5 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STW15NB50 STH15NB50FI T0-247/ISOWATT218 W15NB50 H15NB50FI 15NB50 H15NB50FI W15NB50 H15NB50 P025P ATT218 STW15NB50 STH15NB50FI

    p6nb80

    Abstract: P6NB80FP p*NB80 STP6NB80 STP6NB80FP A12540
    Text: STP6NB80 STP6NB80FP N - CHANNEL 800V - 1.6 Ω - 5.7A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE ST P6NB80 ST P6NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 1.9 Ω < 1.9 Ω 5.7 A 5.7 A TYPICAL RDS(on) = 1.6 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP6NB80 STP6NB80FP O-220/TO-220FP P6NB80 P6NB80FP p6nb80 P6NB80FP p*NB80 STP6NB80 STP6NB80FP A12540

    P11NB40

    Abstract: p11nb40f mosfet p11NB40Fp P11NB40FP p11nb4 p11nb STP11NB40 STP11NB40FP diode L2.8 STP11NB40F
    Text: STP11NB40 STP11NB40FP  N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP PowerMESH MOSFET TYPE V DSS R DS on ID ST P11NB40 ST P11NB40FP 400 V 400 V < 0.55 Ω < 0.55 Ω 10.7 A 6.0 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dV/dt CAPABILITY


    Original     		PDF STP11NB40 STP11NB40FP O-220/TO-220FP P11NB40 P11NB40FP P11NB40 p11nb40f mosfet p11NB40Fp P11NB40FP p11nb4 p11nb STP11NB40 STP11NB40FP diode L2.8 STP11NB40F

    P5NB60

    Abstract: P5NB60FP STP5NB60 STP5NB60FP
    Text: STP5NB60 STP5NB60FP  N - CHANNEL 600V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET TYPE ST P5NB60 ST P5NB60FP • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 2.0 Ω < 2.0 Ω 5 A 3 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP5NB60 STP5NB60FP O-220/TO-220FP P5NB60 P5NB60FP P5NB60 P5NB60FP STP5NB60 STP5NB60FP

    p6nb90fp

    Abstract: P6NB90 STP4NB90 STP6NB90FP P channel Mosfets MOSFET 900V 8A TO-220 STP6NB90 STP4NB90FP 900V2
    Text: STP6NB90 STP6NB90FP  N - CHANNEL 900V - 1.7Ω - 5.8A - TO-220/TO-220FP PowerMESH MOSFET TYPE ST P6NB90 ST P6NB90FP • ■ ■ ■ ■ V DSS R DS on ID 900 V 900 V <2 Ω <2 Ω 5.8 A 5.8 A TYPICAL RDS(on) = 1.7 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP6NB90 STP6NB90FP O-220/TO-220FP P6NB90 P6NB90FP p6nb90fp P6NB90 STP4NB90 STP6NB90FP P channel Mosfets MOSFET 900V 8A TO-220 STP6NB90 STP4NB90FP 900V2

    P7NB80

    Abstract: P7NB80FP p*NB80 STP7NB80 STP7NB80FP STP7NB80F
    Text: STP7NB80 STP7NB80FP  N - CHANNEL 800V - 1.2Ω - 6.5A - TO-220/TO-220FP PowerMESH MOSFET TYPE ST P7NB80 ST P7NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 1.5 Ω < 1.5 Ω 6.5 A 6.5 A TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP7NB80 STP7NB80FP O-220/TO-220FP P7NB80 P7NB80FP P7NB80 P7NB80FP p*NB80 STP7NB80 STP7NB80FP STP7NB80F

    O220FP

    Abstract: P16NB25 P16NB2 STP16NB25 STP16NB25FP
    Text: STP16NB25 STP16NB25FP  N - CHANNEL 250V - 0.220Ω - 16A - TO-220/TO-220FP PowerMESH MOSFET TYPE V DSS R DS on ID ST P16NB25 ST P16NB25FP 250 V 250 V < 0.28 Ω < 0.28 Ω 16 A 8 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.220 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP16NB25 STP16NB25FP O-220/TO-220FP P16NB25 P16NB25FP O220FP P16NB25 P16NB2 STP16NB25 STP16NB25FP