Untitled
Abstract: No abstract text available
Text: Specification Date : Mar-22-2012 TO : Digi-Key Selling agency Approved by KYOCERA Corporation Electronic Components Sales Division 〒612-8501 6 Takeda Tobadono-cho, Fushimi-ku Kyoto 612-8501 TEL 075-604-3500, FAX 075-604-3501 Manufacturer KYOCERA KINSEKI Corporation
|
Original
|
Mar-22-2012
KC7050Yxxx
xxxP20EZU
500MHz
KC7050Y
K1101-12003-SF2
|
PDF
|
0/HT 1200-4 smd
Abstract: No abstract text available
Text: Specification Date : Mar-22-2012 TO : Digi-Key Selling agency Approved by KYOCERA Corporation Electronic Components Sales Division 〒612-8501 6 Takeda Tobadono-cho, Fushimi-ku Kyoto 612-8501 TEL 075-604-3500, FAX 075-604-3501 Manufacturer KYOCERA KINSEKI Corporation
|
Original
|
Mar-22-2012
KC7050Yxxx
xxxP30EZU
500MHz
KC7050Y
K1101-12004-SF2
0/HT 1200-4 smd
|
PDF
|
tocp255k
Abstract: HFBR-4521 TOCP155 FSMA to ST FST Connectors MS100HU H4521 DIN127 DIN41626 F-05
Text: Ratioplast-Optoelectronics GmbH LWL-Werkzeug und Zubehör FO Tools and Accessories Maßzeichnung / Dimension Kurzbeschreibung / Description Knickschutztülle schwarz, für Kabel bis 3,6 mm, Länge: 29 mm Bend protection boot black, for cable up to 3.6 mm, length: 29 mm
|
Original
|
MS100HU
tocp255k
HFBR-4521
TOCP155
FSMA to ST
FST Connectors
H4521
DIN127
DIN41626
F-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LSM330 iNEMO inertial module: 3D accelerometer and 3D gyroscope Datasheet - production data Description The LSM330 is a system-in-package featuring a 3D digital accelerometer with two embedded state machines that can be programmed to implement autonomous applications and a 3D digital
|
Original
|
LSM330
LSM330
LGA-24L
DocID023426
|
PDF
|
PS 229
Abstract: ET-180
Text: C9834 Low EMI Clock Generator for Intel 810 Chipset / PentiumII and PentiumIII Systems Preliminary Product Features • • • • • • • • • • • • • • • • Block Diagram XIN ® Supports Pentium II and Pentium III processors
|
Original
|
C9834
155Mhz)
175pS
C9834AYB
C9834
IMIC9834AYB
PS 229
ET-180
|
PDF
|
UM9441 UM9442
Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
|
Original
|
MPD-101A
UM9441 UM9442
UMM5050
NKT 0039
HUM4020
NTE Semiconductor Technical Guide and Cross Refer
wireless mobile charging through microwaves
MSC 9415
hf power combiner broadband transformers
mpd101
Structure rotary phase shifter
|
PDF
|
philips ferrite 4b1
Abstract: philips ferrite core 4b1 MEA200 3122 108 339 3 1 philips MATV amplifiers OM2063 SC16 gt 6312 UHF amplifier module
Text: DISCRETE SEMICONDUCTORS DATA SHEET OM2063 Wideband amplifier module Product specification Supersedes data of June 1991 File under Discrete Semiconductors, SC16 1995 Nov 28 Philips Semiconductors Product specification Wideband amplifier module OM2063 DESCRIPTION
|
Original
|
OM2063
SCD46
143061/1000/02/pp12
philips ferrite 4b1
philips ferrite core 4b1
MEA200
3122 108 339 3 1
philips MATV amplifiers
OM2063
SC16
gt 6312
UHF amplifier module
|
PDF
|
UM9442
Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
|
Original
|
MPD-101A
UM9442
UMM5050
MSC 9415
pin diodes radiation detector
MSC 501 302 diode
PIN DIODE DRIVER CIRCUITS
"Microwave Diode"
UM9441
Microwave PIN diode
hf power combiner broadband transformers
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LSM6DS1 iNEMO inertial module: 3D accelerometer and 3D gyroscope Datasheet - preliminary data Description The LSM6DS1 is a system-in-package featuring a 3D digital accelerometer and a 3D digital gyroscope. ST’s family of MEMS sensor modules leverages the robust and mature manufacturing
|
Original
|
LGA-16L
DocID025605
|
PDF
|
ablebond 88-1
Abstract: Ablebond 968 Ablebond
Text: Agilent AMMC-5026 2–35 GHz GaAs MMIC Traveling Wave Amplifier Data Sheet Features • Frequency range: 2 – 35 GHz • Gain: 10.5 dB • Gain flatness: ± 0.8 dB • Return loss: Input 17 dB, Output: 15 dB • Output power P-1dB : 24 dBm at 10 GHz 23 dBm at 20 GHz
|
Original
|
AMMC-5026
AMMC-5026-W10
AMMC-5026-W50
5989-3212EN
5989-3929EN
ablebond 88-1
Ablebond 968
Ablebond
|
PDF
|
Ablebond 968
Abstract: AMMC-5026 HMMC-5026 ABLEBONd 86
Text: Agilent AMMC-5026 2–35 GHz GaAs MMIC Traveling Wave Amplifier Data Sheet Features • Frequency range: 2 – 35 GHz • Gain: 10.5 dB • Gain flatness: ± 0.8 dB • Return loss: Input 17 dB, Output: 15 dB • Output power P-1dB : 24 dBm at 10 GHz 23 dBm at 20 GHz
|
Original
|
AMMC-5026
AMMC-5026
5988-9882EN
Ablebond 968
HMMC-5026
ABLEBONd 86
|
PDF
|
MSA-0886-BLK
Abstract: No abstract text available
Text: [ X 3 | HEW LETT' ft "KM P A C K A R D Cascadable Silicon Bipolar MMIC Am plifier Technical Data MSA-0886 Features Description • U sable Gain to 5.5 GHz The MSA-0886 is a high perfor mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,
|
OCR Scan
|
MSA-0886
MSA-0886
MSA-0886-BLK
|
PDF
|
ST Z0 103 MA
Abstract: No abstract text available
Text: What HEW LETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz • High Gain: 9.0 dB TypicalGssat 12 GHz • Low C ost P lastic Package • Tape-and-Reel Packaging
|
OCR Scan
|
ATF-26884
ATF-26884
ST Z0 103 MA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ill# ICW 0RKS W149 4 4 0 BX A G Pset Spread Spectrum Frequency Synthesizer Features • Spread Spectrum feature always enabled • Maximized EMI suppression using IC WORKS’ Spread Spectrum Technology • l2C interface for programming • Power management control inputs
|
OCR Scan
|
440BX
48MHz
24MHz
8-124MHz
FDS-044
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: ill# ICW0RKS Preliminary W144 440BX AGPset Spread Spectrum Frequency Synthesizer • Supports frequencies up to 150MHz Features • Maximized EMI suppression using IC W O R K S ’ Spread Spectrum Technology • l2C interface for programming • Power management control inputs
|
OCR Scan
|
440BX
48MHz
24MHz
150MHz
250ps
|
PDF
|
5964-4069E
Abstract: sia 2297 pseudomorphic HEMT Transistor TT 2246 tt 95 n 12 ATF-36163 ATF-36163-BLK ATF-36163-TR1 M4475 ATF36163
Text: What H E W L E T T mL'timP A C K A R D 1 .5 -1 8 GHz Surface M ount Pseudom orphic HEMT Technical Data ATF-36163 F ea tu res Surface M ount Package • Low M inimum N o ise Figure: I dB Typical a t 12 GHz 0.6 dB Typical at 4 GHz • A sso cia te d Gain: 9.4 dB Typical at 12 GHz
|
OCR Scan
|
ATF-36163
OT-363
SC-70)
G01b723
5964-4069E
5965-4747E
5964-4069E
sia 2297
pseudomorphic HEMT
Transistor TT 2246
tt 95 n 12
ATF-36163
ATF-36163-BLK
ATF-36163-TR1
M4475
ATF36163
|
PDF
|
Untitled
Abstract: No abstract text available
Text: What HEWLETT* mLliM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0186 Features Description • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 0.9 GHz The MSA-0186 is a high perfor mance silicon bipolar Monolithic Microwave Integrated Circuit
|
OCR Scan
|
MSA-0186
MSA-0186
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/60 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF
|
OCR Scan
|
OM2083/60
IS21I2
SCD24
7110fl2fc,
|
PDF
|
ST T4 0570
Abstract: 4894 HM 1211 BP317 philips MATV amplifiers
Text: Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/60 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF
|
OCR Scan
|
OM2083/60
SCD24
ST T4 0570
4894
HM 1211
BP317
philips MATV amplifiers
|
PDF
|
BFQ28
Abstract: Q62702-F527 CJCO D 843 Transistor
Text: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods
|
OCR Scan
|
fl23Sfc
Q62702-F527
BFQ28
Q62702-F527
CJCO
D 843 Transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary W145 ill# ICW 0RKS 440BX AGPSet Spread Spectrum Frequency Generator Features • Maximized EMI suppression using IC W O R KS’Spread Spectrum Technology • Single chip system FTG for Intei^ 440BX AGPset • • • • • • • Three copies of CPU output
|
OCR Scan
|
440BX
48MHz
24MHz
250pb
|
PDF
|
IS-94 mux
Abstract: Str x 5459
Text: VITESSE 4 0 0 M b /s 6 4 x 6 4 C r o s s p & tiit S w itc h FEATURES • • • • • Superior Performance: 400 Mb/s • Operating Range: 0° to +70° C • Power Dissipation: 9.4 W atts Nominal , 14.7 W atts (Max) • Clocked or Flow-Through Operation
|
OCR Scan
|
VSC864A-4
VSC864A-4
VSC864
VSC864:
64x64
IS-94 mux
Str x 5459
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ill# ICW 0RKS Advance Information W150 440BX AGPset Spread Spectrum Frequency Generator Features • Maximized EMI suppression using IC W O R KS’Spread Spectrum Technology • l2C interface for programming • Power m anagem ent control inputs • Single chip system FTG for InteP 440BX AGPset
|
OCR Scan
|
440BX
48MHz
24MHz
|
PDF
|
Transistor TT 2246
Abstract: No abstract text available
Text: W hp% m LUM H E W L E TT PA CKA RD 1 .5 -1 8 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A sso ciated Gain: 9.4 dB Typical at 12 GHz
|
OCR Scan
|
ATF-36163
OT-363
5964-4069E
5965-4747E
Transistor TT 2246
|
PDF
|