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    ST3407S23RG

    Abstract: No abstract text available
    Text: ST3407S23RG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		ST3407S23RG ST3407S23RG OT-23-3L -30V/-4 -30V/-3 PDF

    st3407s23rg

    Abstract: sot-23 MARKING CODE 21 p channel mosfet 100v
    Text: ST3407 P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		ST3407 ST3407 OT-23-3L -30V/-4 -30V/-3 st3407s23rg sot-23 MARKING CODE 21 p channel mosfet 100v PDF