g65m
Abstract: 175C NGA-589 SCA-4 NGA589
Text: Product Description Stanford Microdevices SCA-4 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage
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NGA-589
EDS-101394
g65m
175C
SCA-4
NGA589
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NGA-689
Abstract: SCA-12
Text: Product Description Stanford Microdevices SCA-12 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage
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SCA-12
SCA-12
NGA-689
EDS-101391
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175C
Abstract: NGA-589 SCA-14 SCA-4
Text: Product Description Stanford Microdevices SCA-14 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage
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SCA-14
SCA-14
NGA-589
EDS-101395
175C
SCA-4
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NGA-689
Abstract: No abstract text available
Text: Product Description Stanford Microdevices SCA-2 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage
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NGA-689
EDS-101390
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marking A12
Abstract: No abstract text available
Text: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium
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SGA-1263
SGA-1263
DC-4000
EDS-100935
marking A12
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MMIC SWITCH 2 port 40GHz
Abstract: IS-136 SSW-408
Text: Preliminary Preliminary Preliminary Product Description Stanford Microdevices’ SSW-408 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface mountable small outline plastic package. SSW-408 DC-4 GHz High Power GaAs MMIC
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SSW-408
SSW-408
IS-95,
IS-136,
EDS-101099
MMIC SWITCH 2 port 40GHz
IS-136
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SGA-1263
Abstract: Stanford Microdevices 4 ghz
Text: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium
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SGA-1263
SGA-1263
DC-4000
EDS-100935
Stanford Microdevices 4 ghz
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22 J1J
Abstract: No abstract text available
Text: Product Description SSW-107 Stanford Microdevices’ SSW-107 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch
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SSW-107
SSW-107
500MHz
22 J1J
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Untitled
Abstract: No abstract text available
Text: Product Description SSW-407 Stanford Microdevices’ SSW-407 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz High Power GaAs MMIC SPDT Switch
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SSW-407
55dBm
SSW-407
500MHz
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Untitled
Abstract: No abstract text available
Text: Product Description SSW-207 Stanford Microdevices’ SSW-207 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz, High Isolation GaAs MMIC SPDT Switch
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SSW-207
SSW-207
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Untitled
Abstract: No abstract text available
Text: Product Description SSW-507 Stanford Microdevices’ SSW-507 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable 8-pin miniature small outline plastic package. DC-4 GHz GaAs MMIC SPST Switch This single-pole, single-throw, non-reflective switch
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SSW-507
25dBm
28dBm
SSW-507
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SSW-108
Abstract: No abstract text available
Text: Product Description SSW-108 Stanford Microdevices’ SSW-108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch This single-pole, double-throw, non-reflective switch
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SSW-108
SSW-108
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Untitled
Abstract: No abstract text available
Text: Product Description SSW-508 Stanford Microdevices’ SSW-508 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable 8-pin small outline plastic package. DC-4 GHz GaAs MMIC SPST Switch This single-pole, single-throw, non-reflective switch
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SSW-508
SSW-508
25dBm
28dBm
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Untitled
Abstract: No abstract text available
Text: Product Description SSW-108 Stanford Microdevices’ SSW-108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch This single-pole, double-throw, non-reflective switch
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SSW-108
SSW-108
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SMM-280-4 Stanford Microdevices' SMM-280-4 is a gallium arsenide monolithic-microwave-integrated circuit MMIC amplifier housed in a copper-tungsten package for efficient heat transfer. 1.5-2.7 GHz, 4 Watt GaAs MMIC Amplifier
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SMM-280-4
SMM-280-4
36dBm
46dBm
3000mA
3600mA
1000mW
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SCA-14
Abstract: sca14
Text: E j Stanford Microdevices Product Description IS C A -1 4 Stanford M icrodevices’ SCA-14 is a high perform ance Galliur Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases
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SCA-14
100mA
36dBm.
100mW
sca14
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Untitled
Abstract: No abstract text available
Text: H Stanford Microdevices Product Description SSW-508 Stanford M icrodevices’ SSW -508 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable 8-pin small outline plastic package. DC-4 GHz GaAs MMIC
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SSW-508
25dBm
28dBm
500MHz
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices SSW-108 Product Description Stanford M icrodevices’ SSW -108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-4 GHz High Isolation G a As MMIC SPDT Switch
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SSW-108
500MHz
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Untitled
Abstract: No abstract text available
Text: 0 Stanford Microdevices Product Description SSW-408 Stanford M icrodevices’ SSW -408 is a high performance M ESFET Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-4 GHz High Power GaAs MMIC SPDT Switch This single-pole, double-throw, non-reflective switch
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SSW-408
55dBm
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SSW-408 Stanford M icrodevices’ SSW -408 is a high performance M ESFET Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-4 GHz High Power GaAs MMIC SPDT Switch This single-pole, double-throw, non-reflective switch
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55dBm
SSW-408
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IC LM 8445
Abstract: LM 8445
Text: 1Stanford Microdevices Product Description SCA-4 Stanford M icrodevices’ SCA-4 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor mance up to 3 GHz. The heterojunction increases break
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100mA
38dBm.
100mW
IC LM 8445
LM 8445
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Untitled
Abstract: No abstract text available
Text: 1Stanford Microdevices Product Description SCA-4 Stanford M icrodevices’ SCA-4 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband perfor mance up to 3 GHz. The heterojunction increases break
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100mA
38dBm.
100mW
00000C
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Untitled
Abstract: No abstract text available
Text: IStanford Microdevices Product Description SSW-208 Stanford M icrodevices’ SSW -208 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-4 GHz, High Isolation
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SSW-208
500MHz
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Untitled
Abstract: No abstract text available
Text: IStanford Microdevices Product Description SSW-508 Stanford M icrodevices’ SSW -508 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable 8-pin small outline plastic package. DC-4 GHz GaAs MMIC
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25dBm
28dBm
SSW-508
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