transistor A7
Abstract: HM5116100 HM534251B HM538123B HM62256 HM658512A low vce transistor hitachi eprom Hitachi DSA00503 Hitachi HM62256
Text: Application 1. Static RAM 1.1 Static RAM Memory Cell A memory cell used in Hitachi static RAM consists of 4 NMOS transistors and 2 load resistors as shown in Figure 1-1. The data in the cell can be retained as long as power is supplied, and read out without being
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EDI8F32128C
Abstract: No abstract text available
Text: White Electronic Designs EDI8F32128C 128KX32 STATIC RAM CMOS, HIGH SPEED MODULE FEATURES DESCRIPTION 128Kx32 bit CMOS Static Random Access Memory The EDI8F32128C is a high speed 4Mb Static RAM module organized as 128K words by 32 bits. This module is
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EDI8F32128C
128KX32
EDI8F32128C
128Kx8
150mA
780mA
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INDEPENDENT INK 73X
Abstract: FTA073 S29JL064H spansion pdip 32 marking format 3105P
Text: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features
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S71JL128HC0/128HB0/064HB0/
064HA0/064H80
S71JLxxxH
S29JL064H
16-only
73-ball
88-ball
S71JLxxxHxx
INDEPENDENT INK 73X
FTA073
spansion pdip 32 marking format
3105P
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INDEPENDENT INK 73X
Abstract: FTA073 S29JL064H mA109p
Text: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features
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S71JL128HC0/128HB0/064HB0/
064HA0/064H80
S71JLxxxH
S29JL064H
16-only
73-ball
88-ball
S71JLxxxHxx
INDEPENDENT INK 73X
FTA073
mA109p
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INDEPENDENT INK 73X
Abstract: CEF-A21 71jl128 bonus ball sheets S71JL064HA0BAW01
Text: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features
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S71JL128HC0/128HB0/064HB0/
064HA0/064H80
73-ball
88-ball
S71JLxxxH
S29JL064H
16-only
S71JLxxxHxx
INDEPENDENT INK 73X
CEF-A21
71jl128
bonus ball sheets
S71JL064HA0BAW01
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SA1127
Abstract: SA1115 JEDEC Matrix Tray outlines SA1117
Text: S71PL127JB0/S71PL129JB0/S71PL064JB0 with pSRAM Type 2, Rev D based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64 Megabit (8/4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 32 Megabit (2M x 16-bit) Static RAM/Pseudo Static RAM
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S71PL127JB0/S71PL129JB0/S71PL064JB0
16-bit)
S71PL-JB0
SA1127
SA1115
JEDEC Matrix Tray outlines
SA1117
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Untitled
Abstract: No abstract text available
Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL-J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
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Untitled
Abstract: No abstract text available
Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL-J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
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hitachi hn27c256
Abstract: hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note
Text: HITACHI Memory Devices CONTENTS • • • • VOLATILE - Dynamic RAM •Fast Page Mode •EDO •Synchronous - Dynamic RAM Modules - Static RAM 10 NON VOLATILE - EPROM - EEPROM / Flash - MaskROM 12 14 15 2 APPLICATION SPECIFIC - Video RAM - FIFO / LINE / Frame RAM /
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HM514100
HM514400
HM514800
HM51S4800
HM514900
HN62W4116
HN62W5016N
HM62W4018N
50/40ns)
hitachi hn27c256
hm514280
256K RAM HM62256
1M x 16-Bit x 4 Banks synchronous sRAM
BLS 16K-X
hitachi HM6264
Hitachi 32k static RAM
16M x8 55ns 72 pin flash dimm
sop-40 16-bit
hm6264 application note
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sram 256mb 64X
Abstract: S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL-J S71PL256N S71PL127J
Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL-J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
sram 256mb 64X
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL256N
S71PL127J
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Mcp90
Abstract: MCP78 032J mcp68
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL254/127/064/032J
16-bit)
4M/2M/1M/512K/256K
S71PL
S29PL
Mcp90
MCP78
032J
mcp68
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INDEPENDENT INK 73X
Abstract: sa2111 S29JL064H S29PL127H S29PL129H 71PL193HB0BAW10
Text: S71PL191H/193Hx0 Stacked Multi-Chip Product MCP Flash Memory and SRAM/pSRAM CMOS 3.0 Volt-only, Simultaneous Operation, Page Mode Flash Memory and Static RAM/Pseudo-static RAM ADVANCE INFORMATION Distinctive Characteristics MCP Features Packages — 73-ball FBGA—9 x 13 mm
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S71PL191H/193Hx0
73-ball
S71PL19xHx0
S71PL191HC0
S29PL127H
S29PL129H
S71PL191HB0
S71PL193HC0
S29JL064H
S71PL191
INDEPENDENT INK 73X
sa2111
S29JL064H
S29PL129H
71PL193HB0BAW10
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S71PL064JA0
Abstract: S71PL064JB0 S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 PL032J Spansion s29pl127j
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL254/127/064/032J
16-bit)
4M/2M/1M/512K/256K
S71PL
S71PL064JA0
S71PL064JB0
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL064J80
PL032J
Spansion s29pl127j
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EDI8F32128C
Abstract: Static RAM 128m
Text: White Electronic Designs EDI8F32128C 128KX32 STATIC RAM CMOS, HIGH SPEED MODULE FEATURES DESCRIPTION 128Kx32 bit CMOS Static Random Access Memory Access Times: 15, 20, and 25ns Individual Byte Selects Fully Static, No Clocks TTL Compatible I/O Single +5V ±10% Supply Operation
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EDI8F32128C
128KX32
EDI8F32128C
128Kx8
150mA
780mA
Static RAM 128m
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upd23c8000
Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
Text: MENU INDEX QUESTIONNAIRE Dynamic RAM Dynamic RAM Module Static RAM Mask ROM Flash Memory COMBO Memory MCP Flash memory and SRAM Application Specific Memory Users Manual, Application Notes, Information Related References MENU Synchronous DRAM 128M synchronous DRAM -PC100 compliant64M synchronous DRAM -PC100 compliant64M synchronous DRAM (x32) -PC100 compliant16M synchronous DRAM (Revision A)
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-PC100
compliant64M
compliant16M
168-pin
16-bit,
upd23c8000
upd4502161
uPD23C8000X
uPD4504161
*D431016
uPD23C16000
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Untitled
Abstract: No abstract text available
Text: EN71NS128C0 EN71NS128C0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
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EN71NS128C0
EN71NS128C0
16-bit)
108MHz)
EN71NS
E29NS128
ENPSS64
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EN29NS128
Abstract: E29NS128 PSEUDO SRAM EN71NS PSRAM
Text: EN71NS128C0 EN71NS128C0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
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EN71NS128C0
EN71NS128C0
16-bit)
108MHz)
EN71NS
E29NS128
ENPSS64
EN29NS128
E29NS128
PSEUDO SRAM
PSRAM
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC55YD1819YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 1,048,576-WORD BY 18-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1819YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1819YB-333
576-WORD
18-BIT
TC55YD1819YB
368-bit
C-BGA209-1422-1
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TC55YD1837YB-333
Abstract: daj 8P CQ245
Text: TOSHIBA TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1837YB-333
288-WORD
36-BIT
TC55YD1837YB
368-bit
-602VOa-O
VBIHS01
daj 8P
CQ245
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1837YB-333
288-WORD
36-BIT
TC55YD1837YB
368-bit
C-BGA209-1422-1
15lsl
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1837YB-333
288-WORD
36-BIT
TC55YD1837YB
368-bit
C-BGA209-1422-1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1873YB-333
144-WORD
72-BIT
TC55YD1873YB
368-bit
C-BGA209-1422-1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1873YB-333
144-WORD
72-BIT
TC55YD1873YB
368-bit
C-BGA209-1422-1
15lsl
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qcb 4l
Abstract: No abstract text available
Text: TO SH IB A TENTATIVE TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM DESCRIPTION SILICON GATE CMOS SigmaRAM, 21x1 Dp The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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OCR Scan
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PDF
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TC55YD1837YB-333
288-WORD
36-BIT
TC55YD1837YB
368-bit
C-BGA209-1422-1
qcb 4l
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