U62H256
Abstract: A128C JEP95 U62H256S 075E06 *62h256
Text: U62H256S Automotive Fast 32K x 8 SRAM Features Description F 32768 x 8 bit static CMOS RAM F 35 and 55 ns Access Time F Common data inputs and The U62H256S is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read
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U62H256S
U62H256S
JEP95
MO-059
QS-000733-HD-02
U62H256
A128C
075E06
*62h256
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K6R4016V1D
Abstract: K6R4016V1D-U K6R4016V1D -ui10 44-TSOP2-400BF K6R4016 K6R4008V1D K6R4016V1D-T K6R4016V1D-J K6R4004 K6R4016V1D10
Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.
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K6R4016V1D
256Kx16
110mA
130mA
55/Typ.
35/Typ.
K6R4016V1D
K6R4016V1D-U
K6R4016V1D -ui10
44-TSOP2-400BF
K6R4016
K6R4008V1D
K6R4016V1D-T
K6R4016V1D-J
K6R4004
K6R4016V1D10
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K6R4016V1D-J
Abstract: K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016
Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001
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K6R4008V1D
512Kx8
110mA
130mA
115mA
100mA
44-TSOP2-400BF
002MIN
K6R4016V1D-J
K6R4008
K6R4008V1D
K6R4004C1D-JC
K6R4016
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Untitled
Abstract: No abstract text available
Text: TPS3610U18, TPS3610T50 BATTERYĆBACKUP SUPERVISORS FOR RAM RETENTION SLVS327B – DECEMBER 2000 – REVISED DECEMBER 2002 features typical applications D Supply Current of 40 µA Max D Battery Supply Current of 100 nA (Max) D Precision Supply-Voltage Monitor,
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TPS3610U18,
TPS3610T50
SLVS327B
800-ms
100-ms
14-pin
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Untitled
Abstract: No abstract text available
Text: TPS3619-33, TPS3619-50 TPS3620-33, TPS3620-50 www.ti.com SLVS387F – APRIL 2001 – REVISED DECEMBER 2004 BACKUP-BATTERY SUPERVISORS FOR RAM RETENTION FEATURES • • • • • • • • • • DESCRIPTION Supply Current of 40 µA Max Battery-Supply Current of 100 nA (Max)
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TPS3619-33,
TPS3619-50
TPS3620-33,
TPS3620-50
SLVS387F
100-ms
TPS3619)
MAX819,
MAX703,
MAX704
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2981 24 pin
Abstract: ldt6167
Text: IDT6167SA IDT6167LA CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit
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IDT6167SA
IDT6167LA
IDT6167
package00
x4033
2981 24 pin
ldt6167
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT F eatures * INT flag for port-to-port com m unication * Battery backup operation— 2V data retention * TTL-com patible, sign al 5V ±10% power supply * Available in 52-pin P L C C * Industrial temperature range (-4 0 °C to +85°C) is available for
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52-pin
25135145155ns
IDT70121/70125S
IDT70121S/L
IDT70125S/L
IDT70121/70125L
IDT70121/1DT70125
IDT70121
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 1K X 8 DUAL-PORT STATIC RAM PRELIMINARY IDT71V30S/L F e a tu re s * High-speed access - * Interrupt flags for port-to-port communication Fully asynchronous operation from either port * Battery backup operation, 2V data retention L Only * TTL-compatible, single 3.3V ±0.3V power supply
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IDT71V30S/L
25/35/55ns
IDT71V30S
375mW
IDT71V30L
IDT71V30
IDT77105
25Mb/s
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Untitled
Abstract: No abstract text available
Text: in te i* ERRATA ENCLOSED 51C86 8192 x 8 BIT CHMOS INTEGRATED RAM 51C86-12 S1C86-15 Maximum Access Time ns 120 150 200 Maximum Cycle Time (ns) 175 220 330 40 40 40 Maximum Current (mA) 51C86-20 • Low Voltage Data Retention ■ Latched Address Inputs ■ Fast Access Time
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51C86
51C86-12
S1C86-15
51C86-20
51C86
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 256K 256K x 1-BIT PRELIMINARY IS !” FEATURES: DESCRIPTION: • The ID T71257 Is a 2 6 2 ,144-bit high-speed static RAM organized as 256K x 1. It is fabricated using ID T’s high-performance, high-rellability C E M O S technology. This state-of-the-art technology,
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T71257
144-bit
200mV
IDT71257S/IDT71257L
256Kx
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: m INTEGRATE» DEVICE bûE D 4Ö55771 GQlHEbb Ell • IDT PRELIMINARY IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM Integ rated Device Technology» Inc. FEATURES: • True Dual-Ported memory cells which allow simulta neous reads of the same memory location
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IDT70V05S/L
35/55ns
IDT70V05S
350mW
IDT70V05L
IDT70V05
drw21
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • • • • • • True Dual-Ported memory cells which allow simulta neous reads of the same memory location High-speed access — Commercial: 25/35/55ns max.
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IDT70V05S/L
25/35/55ns
IDT70V05S
350mW
IDT70V05L
IDT70V05
2S771
64-pin
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Untitled
Abstract: No abstract text available
Text: IDT7025S/L HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. more than one device M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave Interrupt Flag On-chip port arbitration logic Full on-chip hardware support of semaphore signaling
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IDT7025S/L
84-pin
100pin
IDT7025
MIL-STD-883,
100-pin
PN100-1)
G84-3)
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6116 CMOS RAM
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 2Kx 8-BIT IDT6116SA IDT6116LA Integrated Devicelechnol03y Inc FEATURES: DESCRIPTION: • T h e ID T6116S A /LA is a 16,384-bit h ig h -s p e e d s ta tic RAM or g an ize d as 2K x 8. It is fa b rica te d u sin g ID T ’s h igh-perform ance,
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IDT6116SA
IDT6116LA
Devicelechnol03y
T6116S
384-bit
IDT6116SA/IDT6116LA
MIL-STD-883,
32-pin)
6116 CMOS RAM
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT7052S/L HIGH-SPEED 2K x 8 FourPort STATIC RAM In te g ra te d D evice T echnology, Inc. FEATURES: • High-speed access — Military: 25/35ns max. — Com m ercial: 20/25/35ns (max.) • Low-power operation — IDT7052S Active: 750m W (typ.)
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IDT7052S/L
25/35ns
20/25/35ns
IDT7052S
IDT7052L
MIL-STD-883,
108-Pin
G108-1
132-Pin
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IDT71258S-35
Abstract: IDT71258S35
Text: CMOS STATIC RAM 256K 64Kx 4-BIT p r e l im in a r y IDT71258S IDT71258S IDT71258L FEATURES: DESCRIPTION: • The ID T 7 1258 is a 262,144-bit hig h -sp ee d sta tic RAM organized as 64K x 4. It is fa b rica te d u sin g ID T’s h ig h -p erform a n ce, high-rella b ility C E M O S te ch n o lo g y. T h is state-of-the-art te ch n olo gy, c o m
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IDT71258S
IDT71258L
144-bit
T71258
200mV
IDT71258S/IDT71258L
MIL-STD-883,
IDT71258S-35
IDT71258S35
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Untitled
Abstract: No abstract text available
Text: bbE D INTEGRATE» DEVICE Integrated Device Technology, Inc* • 4ÖS5771 DGlSMOb fiT4 VERY LOW POWER CMOS SRAM FOR NOTEBOOK/LAPTOP CACHE 256k 32k x 8-BIT FEATURES: IDT71256SL IDT71256L Both versions (SL and L) have outstanding low power characteristics, but differ slightly in dynamic and full standby
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S5771
IDT71256SL
IDT71256L
32-bit
IDT71256SL
S028-5)
P28-2)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT7054S/L HIGH-SPEED 4K x 8 FourPort STATIC RAM * Available in 128 pin Thin Quad Flatpack and 108 pin PGA packages * Industrial temperature range -40°C to +85°C is available for selected speeds Features * High-speed access - Military:25/35ns (max.)
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IDT7054S/L
25/35ns
20/25/35ns
IDT7054
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Untitled
Abstract: No abstract text available
Text: : : I d tj LOW POWER 3V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71L016 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C ) and Industrial (-40° to 85°C)
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16-BIT)
IDT71L016
100ns
44-pin
T71L016
576-bit
200mV
DQ277Ã
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Untitled
Abstract: No abstract text available
Text: LOW POWER 2V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71T016 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T016 is a 1,048,576-bit very low-power Static RAM organized as 64K x 16. It is fabricated using ID Ts highreliabilityCMOStechnology. Thisstate-of-the-arttechnology,
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16-BIT)
IDT71T016
IDT71T016
576-bit
200mV
71T016
400-mil
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Untitled
Abstract: No abstract text available
Text: r = -s- !- Bt622/624 -r- H l-tq Application Information continued 1 • ■• 1 ■ 'w* Brocktree MODES 0,2 MODES 1.3.4
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Bt622/624
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCED INFORMATION IDT61298 Integrated Device Technology, Inc. FEATURES: _ • Fast Output Enable (O E ) pin available for added system flexibility • High speed (equal access and cycle times) — Military: 2 5 /3 5 /4 5 /5 5 (m ax.)
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IDT61298
IDT612981Active:
28-pin
il28-pin
28pin
IDT61298S/1DT61298L
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M/rtd 2968
Abstract: No abstract text available
Text: VERY LOW POWER CMOS SRAM FOR NOTEBOOK/LAPTOP CACHE 256K 32K x 8-BIT IDT71256SL IDT71256L Integrated Device Technology, Inc. FEATURES: • O ptim ized for 16/32bit no tebo ok/lap top cach e at 20 and 25M H z • V ery-low stan dby current (m axim um s): — 3.0m A standby
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IDT71256SL
IDT71256L
16/32bit
25/35ns
120uA
IDT71256SL
P28-2)
M/rtd 2968
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Untitled
Abstract: No abstract text available
Text: M È k C M O S STATIC RAM 6 4 K 6 4 K x 1 -BIT IDT7187S IDT7187L Integrateci D eviceTechnology. Inc FEATURES: DESCRIPTION: • The ID T7187 is a 65,536-bit h ig h -s p e e d sta tic RAM organized as 64K x 1. It is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlgh-reliabllity te c h n o lo g y , C E M O S . A c ce ss tim e s as fast as 15ns are available
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IDT7187S
IDT7187L
T7187
536-bit
IDT7187
MIL-STD-883,
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