Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    STATIC RAM WITH DATA RETENTION Search Results

    STATIC RAM WITH DATA RETENTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF20FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4KMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4MMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    STATIC RAM WITH DATA RETENTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48Z02

    Abstract: 232268 "lithium battery pack" pinout
    Text: Issued March 1997 232-2683 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data


    Original
    PDF 48Z02 48Z02 232268 "lithium battery pack" pinout

    48Z02

    Abstract: "lithium battery pack" pinout
    Text: Issued March 1987 005-471 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data


    Original
    PDF 48Z02 48Z02 "lithium battery pack" pinout

    EDI8F81025C100B6C

    Abstract: EDI8F81025C70B6C EDI8F81025C85B6C EDI8F81025LP70B6C
    Text: EDI8F81025C 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multilayered epoxy laminate FR4 substrate. A low power version with data retention (EDI8F81025LP) is


    Original
    PDF EDI8F81025C EDI8F81025C 512Kx8 EDI8F81025LP) 100ns EDI8F81025LP EDI8F81025C70B6C EDI8F81025C70B6I. 01581USA EDI8F81025C100B6C EDI8F81025C85B6C EDI8F81025LP70B6C

    PCF8570CP

    Abstract: PCF8570CT
    Text: INTEGRATED CIRCUITS DATA SHEET PCF8570C 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification Supersedes data of August 1994 File under Integrated Circuits, IC12 1997 Apr 01 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with


    Original
    PDF PCF8570C SCA53 417067/1200/02/pp20 PCF8570CP PCF8570CT

    ic software program pcf8583

    Abstract: PCF8583 PCF8583P PCF8583T Philips pcf8583p PCF8583 an MRB003
    Text: INTEGRATED CIRCUITS DATA SHEET PCF8583 Clock Calendar with 256 x 8-bit Static RAM Product specification File under Integrated Circuits, IC01 October 1991 Philips Semiconductors Product specification Clock Calendar with 256 x 8-bit Static RAM PCF8583 FEATURES


    Original
    PDF PCF8583 PCF8583 2048-bit ic software program pcf8583 PCF8583P PCF8583T Philips pcf8583p PCF8583 an MRB003

    PCF8570P

    Abstract: PCF8570 PCF8570T
    Text: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Product specification Supersedes data of 1997 Sep 02 File under Integrated Circuits, IC12 1999 Jan 06 Philips Semiconductors Product specification 256 × 8-bit static low-voltage RAM with


    Original
    PDF PCF8570 SCA61 415106/00/04/pp20 PCF8570P PCF8570 PCF8570T

    9398 393 40011

    Abstract: PCF8570T P80CLXXX PCF8570 PCF8570P
    Text: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification File under Integrated Circuits, IC12 Philips Semiconductors August 1994 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with


    Original
    PDF PCF8570 PCF8570 SCD34 493061/1500/01/pp20 9398 393 40011 PCF8570T P80CLXXX PCF8570P

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS DAT PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Product specification Supersedes data of 1997 Sep 02 File under Integrated Circuits, IC12 1999 Jan 06 Philips Semiconductors Product specification 256 × 8-bit static low-voltage RAM with


    Original
    PDF PCF8570 SCA61 415106/00/04/pp20

    7C13

    Abstract: UT7C138 UT7C139 4Kx8 Dual-Port Static RAM 7L Marking
    Text: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Preliminary Data Sheet Dec. 1997 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM


    Original
    PDF UT7C138/139 MIL-STD-883 UT7C138 UT7C139 DUALPORT-2-12-97 7C13 4Kx8 Dual-Port Static RAM 7L Marking

    5962F1123501QXA

    Abstract: SECDED CYPT1049DV33-12FZMB
    Text: CYRS1049DV33 4-Mbit 512 K x 8 Static RAM with RadStop Technology 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology Radiation Performance • Radiation Data Features characteristics in a 36-pin ceramic flat package ■ Total dose 300 Krad


    Original
    PDF CYRS1049DV33 36-pin 5962F1123501QXA SECDED CYPT1049DV33-12FZMB

    a7r smd

    Abstract: smd marking A4L smd a4l A1L smd
    Text: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Preliminary Data Sheet Dec. 1997 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM


    Original
    PDF UT7C138/139 MIL-STD-883 68-lead 68-pin DUALPORT-2-12-97 a7r smd smd marking A4L smd a4l A1L smd

    dualport

    Abstract: smd dual diode A4l smd transistor marking a5l A1L smd diode SMD A11L smd a4l smd transistor A7R marking a7r smd SMD A9L smd diode a3l
    Text: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Data Sheet January 2002 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM


    Original
    PDF UT7C138/139 MIL-STD-883 68-lead 68-pin DUALPORT-2-12-97 dualport smd dual diode A4l smd transistor marking a5l A1L smd diode SMD A11L smd a4l smd transistor A7R marking a7r smd SMD A9L smd diode a3l

    DS1213C

    Abstract: DS1213B
    Text: DS1213C SmartSocket 256k www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 32K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection


    Original
    PDF DS1213C 28-Pin DS1213C 28-pin, DS1213B 28-PIN

    8822 TRANSISTOR

    Abstract: U62H256A ZMD AG ZMDU62H256ASK
    Text: U62H256A Automotive Fast 32K x 8 SRAM Features Description ! 32768 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and ! ! ! ! ! ! ! ! ! ! The U62H256A is a static RAM manufactured using a CMOS process technology with the following


    Original
    PDF U62H256A U62H256A D-01109 D-01101 8822 TRANSISTOR ZMD AG ZMDU62H256ASK

    L6116PC85

    Abstract: L6116NC35 L6116PC35 cy6116 L6116PC45 IDT6116 L6116NC85 L6116PC20
    Text: L6116 2K x 8 Static RAM Features Description □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data In and Data Out signals share I/O


    OCR Scan
    PDF L6116 IDT6116, CY7C128/CY6116 24-pin L6116 I7/07 L6116PC85 L6116NC35 L6116PC35 cy6116 L6116PC45 IDT6116 L6116NC85 L6116PC20

    L7C185NC85

    Abstract: l7c185uc85 L7C185NC45 ma 8630 IDT7164 L7C185PC20 L7C185PC25 L7C185PC45 L7C185PC85 L7C185NC35
    Text: L7C185 8K x 8 Static RAM Features Description □ 8K by 8 Static RAM with chip select powerdown, output enable The L7C185 is a high-performance, low-power CMOS static RAM. The storage circuitry is organized as 8,192 words by 8 bits per word. The 8 Data In and Data Out signals share I/O


    OCR Scan
    PDF L7C185 IDT7164, CY7C185/186 28-pin L7C185 L7C185NC85 l7c185uc85 L7C185NC45 ma 8630 IDT7164 L7C185PC20 L7C185PC25 L7C185PC45 L7C185PC85 L7C185NC35

    Untitled

    Abstract: No abstract text available
    Text: L6 1 1 6 2K x 8 Static RAM Features Description_ □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data


    OCR Scan
    PDF L6116

    Untitled

    Abstract: No abstract text available
    Text: L7C162 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Impedance Write The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and


    OCR Scan
    PDF L7C162 L7C162 dMB20 L7C162CMB15 5/24/94-L 28-pin L7C162KC20 L7C162KC15 L7C162KC12

    LCC 18 Pin Package

    Abstract: LCC 16 Pin Package E12M
    Text: ma EDI8464C Electronic DeilQns Inc. High Speed 256K Monolithic SRAM 64Kx4 Static RAM CMOS, High Speed Monolithic Features The EDI8464C is a high performance CMOS Static RAM organized as 64Kx4 and it is also available in a low power version, EDI8464LP, with data retention.


    OCR Scan
    PDF EDI8464C 64Kx4 EDI8464C EDI8464LP, MIL-STD-883, A0-A15 EDI8464C25LB LCC 18 Pin Package LCC 16 Pin Package E12M

    Untitled

    Abstract: No abstract text available
    Text: 128KX8 NON-VOLATILE RAM M s iR u m m u R • • • • • • GR12882 Plug-in replacement for Static RAM 20 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles GR12882 is 128 kilobyte of non-volatile memory which is pin-compatible with normal Static RAM and offers immediate conversion to


    OCR Scan
    PDF 128KX8 GR12882 GR12882

    Untitled

    Abstract: No abstract text available
    Text: ^E D I _ EDI8464C Etoctionte P w lqn» Inc. High Speed 256K Monolithic SRAM 64Kx4 Static RAM CMOS, High Speed Monolithic Features The EDI8464C isahigh performance CMOS Static RAM organized as 64Kx4 and it is also available in a low power version, EDI8464LP, with data retention.


    OCR Scan
    PDF EDI8464C 64Kx4 EDI8464C EDI8464LP, MIL-STD-883, AocessTimes25 45and

    MS621000-10FC

    Abstract: MS621000-80FC MS621000-80PC MS621000L-80PC P322
    Text: MOSEL MS621000 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power ADVANCE INFORMATION FEATURES DESCRIPTION • Available in 80/100/120 ns (Max.) The MOSEL MS621000 is a high performance, low power CMOS static RAM organized as 131,072 words by 8 bits.


    OCR Scan
    PDF MS621000 MS621000L MS621000 PID051 MS621000-80PC P32-2 MS621000-80FC S32-1 MS621000-10FC MS621000L-80PC P322

    Untitled

    Abstract: No abstract text available
    Text: MOSEL _MS621000 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power ADVANCE INFORMATION FEATURES DESCRIPTION • Available in 80/100/120 ns (Max.) The MOSEL MS621000 is a high performance, low power CMOS static RAM organized as 131,072 words by 8 bits.


    OCR Scan
    PDF MS621000 MS621000 PID051 MS621000-80PC MS621000-B0FC MS621000L-80PC MS621OOOL-0OFC MS621000-10PC MS621000-10FC

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS621000 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power ADVANCE INFORMATION FEATURES DESCRIPTION • Available in 80/100/120 ns (Max.) The MOSEL MS621000 is a high performance, low power CMOS static RAM organized as 131,072 words by 8 bits.


    OCR Scan
    PDF MS621000 MS621000 MS62TION S621000-80PC P32-2 S621000-80FC S32-1 621000L-80P