48Z02
Abstract: 232268 "lithium battery pack" pinout
Text: Issued March 1997 232-2683 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data
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48Z02
48Z02
232268
"lithium battery pack" pinout
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48Z02
Abstract: "lithium battery pack" pinout
Text: Issued March 1987 005-471 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data
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48Z02
48Z02
"lithium battery pack" pinout
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EDI8F81025C100B6C
Abstract: EDI8F81025C70B6C EDI8F81025C85B6C EDI8F81025LP70B6C
Text: EDI8F81025C 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multilayered epoxy laminate FR4 substrate. A low power version with data retention (EDI8F81025LP) is
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EDI8F81025C
EDI8F81025C
512Kx8
EDI8F81025LP)
100ns
EDI8F81025LP
EDI8F81025C70B6C
EDI8F81025C70B6I.
01581USA
EDI8F81025C100B6C
EDI8F81025C85B6C
EDI8F81025LP70B6C
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PCF8570CP
Abstract: PCF8570CT
Text: INTEGRATED CIRCUITS DATA SHEET PCF8570C 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification Supersedes data of August 1994 File under Integrated Circuits, IC12 1997 Apr 01 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with
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PCF8570C
SCA53
417067/1200/02/pp20
PCF8570CP
PCF8570CT
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ic software program pcf8583
Abstract: PCF8583 PCF8583P PCF8583T Philips pcf8583p PCF8583 an MRB003
Text: INTEGRATED CIRCUITS DATA SHEET PCF8583 Clock Calendar with 256 x 8-bit Static RAM Product specification File under Integrated Circuits, IC01 October 1991 Philips Semiconductors Product specification Clock Calendar with 256 x 8-bit Static RAM PCF8583 FEATURES
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PCF8583
PCF8583
2048-bit
ic software program pcf8583
PCF8583P
PCF8583T
Philips pcf8583p
PCF8583 an
MRB003
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PCF8570P
Abstract: PCF8570 PCF8570T
Text: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Product specification Supersedes data of 1997 Sep 02 File under Integrated Circuits, IC12 1999 Jan 06 Philips Semiconductors Product specification 256 × 8-bit static low-voltage RAM with
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PCF8570
SCA61
415106/00/04/pp20
PCF8570P
PCF8570
PCF8570T
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7C13
Abstract: UT7C138 UT7C139 4Kx8 Dual-Port Static RAM 7L Marking
Text: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Preliminary Data Sheet Dec. 1997 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM
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UT7C138/139
MIL-STD-883
UT7C138
UT7C139
DUALPORT-2-12-97
7C13
4Kx8 Dual-Port Static RAM
7L Marking
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a7r smd
Abstract: smd marking A4L smd a4l A1L smd
Text: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Preliminary Data Sheet Dec. 1997 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM
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UT7C138/139
MIL-STD-883
68-lead
68-pin
DUALPORT-2-12-97
a7r smd
smd marking A4L
smd a4l
A1L smd
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dualport
Abstract: smd dual diode A4l smd transistor marking a5l A1L smd diode SMD A11L smd a4l smd transistor A7R marking a7r smd SMD A9L smd diode a3l
Text: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Data Sheet January 2002 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM
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UT7C138/139
MIL-STD-883
68-lead
68-pin
DUALPORT-2-12-97
dualport
smd dual diode A4l
smd transistor marking a5l
A1L smd diode
SMD A11L
smd a4l
smd transistor A7R marking
a7r smd
SMD A9L
smd diode a3l
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X2212
Abstract: X22C12 SOIC-18 FOOTPRINT
Text: X22C12 X22C12 1K Bit 256 x 4 Nonvolatile Static RAM FEATURES DESCRIPTION • The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM STORE
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X22C12
X22C12
--150ns
9-A-0065
X2212
SOIC-18 FOOTPRINT
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X2212
Abstract: X22C12
Text: X22C12 X22C12 1K Bit 256 x 4 Nonvolatile Static RAM FEATURES DESCRIPTION • The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM STORE
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X22C12
X22C12
--150ns
X2212
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U621708
Abstract: transistor A16 ZMD AG
Text: Preliminary U621708 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 70 ns Access Time ! Common data inputs and The U621708 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby
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U621708
U621708
D-01109
D-01101
transistor A16
ZMD AG
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DS1213B
Abstract: J-STD-020A
Text: DS1213B SmartSocket 16k/64k www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 2K x 8 or 8K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with proper RAM selection
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DS1213B
16k/64k
28-Pin
DS1213B
600-MIL
28-PIN
J-STD-020A
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DS1213B
Abstract: DS1213
Text: DS1213B SmartSocket 16k/64k www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 2K x 8 or 8K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with proper RAM selection
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DS1213B
16k/64k
28-Pin
DS1213B
600-MIL
28-PIN
DS1213
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ZMD AG
Abstract: No abstract text available
Text: Preliminary UL62H1616A Low Voltage Automotive Fast 64K x 16 SRAM Features Description ! 65536 x 16 bit static CMOS RAM ! 15, 20 and 35 ns Access Time ! Common data inputs and The UL62H1616A is a static RAM manufactured using a CMOS process technology with the following
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UL62H1616A
UL62H1616A
D-01109
D-01101
ZMD AG
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ZMD AG
Abstract: No abstract text available
Text: UL62H256A Low Voltage Automotive Fast 32K x 8 SRAM Features Description ! 32768 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The UL62H256A is a static RAM manufactured using a CMOS process technology with the following operating modes:
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UL62H256A
UL62H256A
D-01109
D-01101
ZMD AG
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U62H1708
Abstract: ZMD AG
Text: Preliminary U62H1708 Automotive Fast 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The U62H1708 is a static RAM manufactured using a CMOS process technology with the following operating modes:
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U62H1708
U62H1708
D-01109
D-01101
ZMD AG
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U62H256
Abstract: A128C JEP95 U62H256S 075E06 *62h256
Text: U62H256S Automotive Fast 32K x 8 SRAM Features Description F 32768 x 8 bit static CMOS RAM F 35 and 55 ns Access Time F Common data inputs and The U62H256S is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read
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U62H256S
U62H256S
JEP95
MO-059
QS-000733-HD-02
U62H256
A128C
075E06
*62h256
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Untitled
Abstract: No abstract text available
Text: L6 1 1 6 2K x 8 Static RAM Features Description_ □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data
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L6116
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Untitled
Abstract: No abstract text available
Text: L7C162 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Impedance Write The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and
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L7C162
L7C162
dMB20
L7C162CMB15
5/24/94-L
28-pin
L7C162KC20
L7C162KC15
L7C162KC12
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Untitled
Abstract: No abstract text available
Text: 128KX8 NON-VOLATILE RAM M s iR u m m u R • • • • • • GR12882 Plug-in replacement for Static RAM 20 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles GR12882 is 128 kilobyte of non-volatile memory which is pin-compatible with normal Static RAM and offers immediate conversion to
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128KX8
GR12882
GR12882
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Untitled
Abstract: No abstract text available
Text: ^E D I _ EDI8464C Etoctionte P w lqn» Inc. High Speed 256K Monolithic SRAM 64Kx4 Static RAM CMOS, High Speed Monolithic Features The EDI8464C isahigh performance CMOS Static RAM organized as 64Kx4 and it is also available in a low power version, EDI8464LP, with data retention.
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EDI8464C
64Kx4
EDI8464C
EDI8464LP,
MIL-STD-883,
AocessTimes25
45and
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Untitled
Abstract: No abstract text available
Text: LOGIC DEVICES INC 2bE D • SSbSTGS OGQlQib 3 ■ 2 x 4 K x 16 Cache-Data Static RAM DESCRIPTION FEATURES □ 2 x 4K x 16 or 8K x 16 Cache-Data Static RAM with Direct Map or Two-Way Set Associative □ Auto-Powerdown Design □ Advanced CMOS Technology
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CY7C183/184
48-pin
52-pin
L7C183/184
L7C183
L7C184
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a6059
Abstract: No abstract text available
Text: M ilitary Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Preliminary Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER May 1996 FEATURES a a a □ □ INTRODUCTION 45ns and 55ns maximum address access time Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM
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UT7C138/139
11L/CM
MIL-STD-883
DPRAM-1-5-96
a6059
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