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    STATIC RAM WITH DATA RETENTION Search Results

    STATIC RAM WITH DATA RETENTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF20FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4KMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4MMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    STATIC RAM WITH DATA RETENTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    U62H256

    Abstract: A128C JEP95 U62H256S 075E06 *62h256
    Text: U62H256S Automotive Fast 32K x 8 SRAM Features Description F 32768 x 8 bit static CMOS RAM F 35 and 55 ns Access Time F Common data inputs and The U62H256S is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read


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    PDF U62H256S U62H256S JEP95 MO-059 QS-000733-HD-02 U62H256 A128C 075E06 *62h256

    K6R4016V1D

    Abstract: K6R4016V1D-U K6R4016V1D -ui10 44-TSOP2-400BF K6R4016 K6R4008V1D K6R4016V1D-T K6R4016V1D-J K6R4004 K6R4016V1D10
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


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    PDF K6R4016V1D 256Kx16 110mA 130mA 55/Typ. 35/Typ. K6R4016V1D K6R4016V1D-U K6R4016V1D -ui10 44-TSOP2-400BF K6R4016 K6R4008V1D K6R4016V1D-T K6R4016V1D-J K6R4004 K6R4016V1D10

    K6R4016V1D-J

    Abstract: K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


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    PDF K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF 002MIN K6R4016V1D-J K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016

    Untitled

    Abstract: No abstract text available
    Text: TPS3610U18, TPS3610T50 BATTERYĆBACKUP SUPERVISORS FOR RAM RETENTION SLVS327B – DECEMBER 2000 – REVISED DECEMBER 2002 features typical applications D Supply Current of 40 µA Max D Battery Supply Current of 100 nA (Max) D Precision Supply-Voltage Monitor,


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    PDF TPS3610U18, TPS3610T50 SLVS327B 800-ms 100-ms 14-pin

    Untitled

    Abstract: No abstract text available
    Text: TPS3619-33, TPS3619-50 TPS3620-33, TPS3620-50 www.ti.com SLVS387F – APRIL 2001 – REVISED DECEMBER 2004 BACKUP-BATTERY SUPERVISORS FOR RAM RETENTION FEATURES • • • • • • • • • • DESCRIPTION Supply Current of 40 µA Max Battery-Supply Current of 100 nA (Max)


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    PDF TPS3619-33, TPS3619-50 TPS3620-33, TPS3620-50 SLVS387F 100-ms TPS3619) MAX819, MAX703, MAX704

    2981 24 pin

    Abstract: ldt6167
    Text: IDT6167SA IDT6167LA CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit


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    PDF IDT6167SA IDT6167LA IDT6167 package00 x4033 2981 24 pin ldt6167

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT F eatures * INT flag for port-to-port com m unication * Battery backup operation— 2V data retention * TTL-com patible, sign al 5V ±10% power supply * Available in 52-pin P L C C * Industrial temperature range (-4 0 °C to +85°C) is available for


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    PDF 52-pin 25135145155ns IDT70121/70125S IDT70121S/L IDT70125S/L IDT70121/70125L IDT70121/1DT70125 IDT70121

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 1K X 8 DUAL-PORT STATIC RAM PRELIMINARY IDT71V30S/L F e a tu re s * High-speed access - * Interrupt flags for port-to-port communication Fully asynchronous operation from either port * Battery backup operation, 2V data retention L Only * TTL-compatible, single 3.3V ±0.3V power supply


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    PDF IDT71V30S/L 25/35/55ns IDT71V30S 375mW IDT71V30L IDT71V30 IDT77105 25Mb/s

    Untitled

    Abstract: No abstract text available
    Text: in te i* ERRATA ENCLOSED 51C86 8192 x 8 BIT CHMOS INTEGRATED RAM 51C86-12 S1C86-15 Maximum Access Time ns 120 150 200 Maximum Cycle Time (ns) 175 220 330 40 40 40 Maximum Current (mA) 51C86-20 • Low Voltage Data Retention ■ Latched Address Inputs ■ Fast Access Time


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    PDF 51C86 51C86-12 S1C86-15 51C86-20 51C86

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 256K 256K x 1-BIT PRELIMINARY IS !” FEATURES: DESCRIPTION: • The ID T71257 Is a 2 6 2 ,144-bit high-speed static RAM organized as 256K x 1. It is fabricated using ID T’s high-performance, high-rellability C E M O S technology. This state-of-the-art technology,


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    PDF T71257 144-bit 200mV IDT71257S/IDT71257L 256Kx MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: m INTEGRATE» DEVICE bûE D 4Ö55771 GQlHEbb Ell • IDT PRELIMINARY IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM Integ rated Device Technology» Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location


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    PDF IDT70V05S/L 35/55ns IDT70V05S 350mW IDT70V05L IDT70V05 drw21

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • • • • • • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location High-speed access — Commercial: 25/35/55ns max.


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    PDF IDT70V05S/L 25/35/55ns IDT70V05S 350mW IDT70V05L IDT70V05 2S771 64-pin

    Untitled

    Abstract: No abstract text available
    Text: IDT7025S/L HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. more than one device M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave Interrupt Flag On-chip port arbitration logic Full on-chip hardware support of semaphore signaling


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    PDF IDT7025S/L 84-pin 100pin IDT7025 MIL-STD-883, 100-pin PN100-1) G84-3)

    6116 CMOS RAM

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 16K 2Kx 8-BIT IDT6116SA IDT6116LA Integrated Devicelechnol03y Inc FEATURES: DESCRIPTION: • T h e ID T6116S A /LA is a 16,384-bit h ig h -s p e e d s ta tic RAM or­ g an ize d as 2K x 8. It is fa b rica te d u sin g ID T ’s h igh-perform ance,


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    PDF IDT6116SA IDT6116LA Devicelechnol03y T6116S 384-bit IDT6116SA/IDT6116LA MIL-STD-883, 32-pin) 6116 CMOS RAM

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY IDT7052S/L HIGH-SPEED 2K x 8 FourPort STATIC RAM In te g ra te d D evice T echnology, Inc. FEATURES: • High-speed access — Military: 25/35ns max. — Com m ercial: 20/25/35ns (max.) • Low-power operation — IDT7052S Active: 750m W (typ.)


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    PDF IDT7052S/L 25/35ns 20/25/35ns IDT7052S IDT7052L MIL-STD-883, 108-Pin G108-1 132-Pin

    IDT71258S-35

    Abstract: IDT71258S35
    Text: CMOS STATIC RAM 256K 64Kx 4-BIT p r e l im in a r y IDT71258S IDT71258S IDT71258L FEATURES: DESCRIPTION: • The ID T 7 1258 is a 262,144-bit hig h -sp ee d sta tic RAM organized as 64K x 4. It is fa b rica te d u sin g ID T’s h ig h -p erform a n ce, high-rella b ility C E M O S te ch n o lo g y. T h is state-of-the-art te ch n olo gy, c o m ­


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    PDF IDT71258S IDT71258L 144-bit T71258 200mV IDT71258S/IDT71258L MIL-STD-883, IDT71258S-35 IDT71258S35

    Untitled

    Abstract: No abstract text available
    Text: bbE D INTEGRATE» DEVICE Integrated Device Technology, Inc* • 4ÖS5771 DGlSMOb fiT4 VERY LOW POWER CMOS SRAM FOR NOTEBOOK/LAPTOP CACHE 256k 32k x 8-BIT FEATURES: IDT71256SL IDT71256L Both versions (SL and L) have outstanding low power characteristics, but differ slightly in dynamic and full standby


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    PDF S5771 IDT71256SL IDT71256L 32-bit IDT71256SL S028-5) P28-2)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY IDT7054S/L HIGH-SPEED 4K x 8 FourPort STATIC RAM * Available in 128 pin Thin Quad Flatpack and 108 pin PGA packages * Industrial temperature range -40°C to +85°C is available for selected speeds Features * High-speed access - Military:25/35ns (max.)


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    PDF IDT7054S/L 25/35ns 20/25/35ns IDT7054

    Untitled

    Abstract: No abstract text available
    Text: : : I d tj LOW POWER 3V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71L016 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C ) and Industrial (-40° to 85°C)


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    PDF 16-BIT) IDT71L016 100ns 44-pin T71L016 576-bit 200mV DQ277Ã

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 2V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71T016 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T016 is a 1,048,576-bit very low-power Static RAM organized as 64K x 16. It is fabricated using ID Ts highreliabilityCMOStechnology. Thisstate-of-the-arttechnology,


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    PDF 16-BIT) IDT71T016 IDT71T016 576-bit 200mV 71T016 400-mil

    Untitled

    Abstract: No abstract text available
    Text: r = -s- !- Bt622/624 -r- H l-tq Application Information continued 1 • ■• 1 ■ 'w* Brocktree MODES 0,2 MODES 1.3.4


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    PDF Bt622/624 MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCED INFORMATION IDT61298 Integrated Device Technology, Inc. FEATURES: _ • Fast Output Enable (O E ) pin available for added system flexibility • High speed (equal access and cycle times) — Military: 2 5 /3 5 /4 5 /5 5 (m ax.)


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    PDF IDT61298 IDT612981Active: 28-pin il28-pin 28pin IDT61298S/1DT61298L

    M/rtd 2968

    Abstract: No abstract text available
    Text: VERY LOW POWER CMOS SRAM FOR NOTEBOOK/LAPTOP CACHE 256K 32K x 8-BIT IDT71256SL IDT71256L Integrated Device Technology, Inc. FEATURES: • O ptim ized for 16/32bit no tebo ok/lap top cach e at 20 and 25M H z • V ery-low stan dby current (m axim um s): — 3.0m A standby


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    PDF IDT71256SL IDT71256L 16/32bit 25/35ns 120uA IDT71256SL P28-2) M/rtd 2968

    Untitled

    Abstract: No abstract text available
    Text: M È k C M O S STATIC RAM 6 4 K 6 4 K x 1 -BIT IDT7187S IDT7187L Integrateci D eviceTechnology. Inc FEATURES: DESCRIPTION: • The ID T7187 is a 65,536-bit h ig h -s p e e d sta tic RAM organized as 64K x 1. It is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlgh-reliabllity te c h n o lo g y , C E M O S . A c ce ss tim e s as fast as 15ns are available


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    PDF IDT7187S IDT7187L T7187 536-bit IDT7187 MIL-STD-883,