Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    STATIC RAM WITH DATA RETENTION Search Results

    STATIC RAM WITH DATA RETENTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF20FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4KMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4MMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    STATIC RAM WITH DATA RETENTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48Z02

    Abstract: 232268 "lithium battery pack" pinout
    Text: Issued March 1997 232-2683 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data


    Original
    PDF 48Z02 48Z02 232268 "lithium battery pack" pinout

    48Z02

    Abstract: "lithium battery pack" pinout
    Text: Issued March 1987 005-471 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data


    Original
    PDF 48Z02 48Z02 "lithium battery pack" pinout

    EDI8F81025C100B6C

    Abstract: EDI8F81025C70B6C EDI8F81025C85B6C EDI8F81025LP70B6C
    Text: EDI8F81025C 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multilayered epoxy laminate FR4 substrate. A low power version with data retention (EDI8F81025LP) is


    Original
    PDF EDI8F81025C EDI8F81025C 512Kx8 EDI8F81025LP) 100ns EDI8F81025LP EDI8F81025C70B6C EDI8F81025C70B6I. 01581USA EDI8F81025C100B6C EDI8F81025C85B6C EDI8F81025LP70B6C

    PCF8570CP

    Abstract: PCF8570CT
    Text: INTEGRATED CIRCUITS DATA SHEET PCF8570C 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification Supersedes data of August 1994 File under Integrated Circuits, IC12 1997 Apr 01 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with


    Original
    PDF PCF8570C SCA53 417067/1200/02/pp20 PCF8570CP PCF8570CT

    ic software program pcf8583

    Abstract: PCF8583 PCF8583P PCF8583T Philips pcf8583p PCF8583 an MRB003
    Text: INTEGRATED CIRCUITS DATA SHEET PCF8583 Clock Calendar with 256 x 8-bit Static RAM Product specification File under Integrated Circuits, IC01 October 1991 Philips Semiconductors Product specification Clock Calendar with 256 x 8-bit Static RAM PCF8583 FEATURES


    Original
    PDF PCF8583 PCF8583 2048-bit ic software program pcf8583 PCF8583P PCF8583T Philips pcf8583p PCF8583 an MRB003

    PCF8570P

    Abstract: PCF8570 PCF8570T
    Text: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Product specification Supersedes data of 1997 Sep 02 File under Integrated Circuits, IC12 1999 Jan 06 Philips Semiconductors Product specification 256 × 8-bit static low-voltage RAM with


    Original
    PDF PCF8570 SCA61 415106/00/04/pp20 PCF8570P PCF8570 PCF8570T

    7C13

    Abstract: UT7C138 UT7C139 4Kx8 Dual-Port Static RAM 7L Marking
    Text: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Preliminary Data Sheet Dec. 1997 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM


    Original
    PDF UT7C138/139 MIL-STD-883 UT7C138 UT7C139 DUALPORT-2-12-97 7C13 4Kx8 Dual-Port Static RAM 7L Marking

    a7r smd

    Abstract: smd marking A4L smd a4l A1L smd
    Text: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Preliminary Data Sheet Dec. 1997 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM


    Original
    PDF UT7C138/139 MIL-STD-883 68-lead 68-pin DUALPORT-2-12-97 a7r smd smd marking A4L smd a4l A1L smd

    dualport

    Abstract: smd dual diode A4l smd transistor marking a5l A1L smd diode SMD A11L smd a4l smd transistor A7R marking a7r smd SMD A9L smd diode a3l
    Text: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Data Sheet January 2002 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM


    Original
    PDF UT7C138/139 MIL-STD-883 68-lead 68-pin DUALPORT-2-12-97 dualport smd dual diode A4l smd transistor marking a5l A1L smd diode SMD A11L smd a4l smd transistor A7R marking a7r smd SMD A9L smd diode a3l

    X2212

    Abstract: X22C12 SOIC-18 FOOTPRINT
    Text: X22C12 X22C12 1K Bit 256 x 4 Nonvolatile Static RAM FEATURES DESCRIPTION • The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM STORE


    Original
    PDF X22C12 X22C12 --150ns 9-A-0065 X2212 SOIC-18 FOOTPRINT

    X2212

    Abstract: X22C12
    Text: X22C12 X22C12 1K Bit 256 x 4 Nonvolatile Static RAM FEATURES DESCRIPTION • The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM STORE


    Original
    PDF X22C12 X22C12 --150ns X2212

    U621708

    Abstract: transistor A16 ZMD AG
    Text: Preliminary U621708 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 70 ns Access Time ! Common data inputs and The U621708 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby


    Original
    PDF U621708 U621708 D-01109 D-01101 transistor A16 ZMD AG

    DS1213B

    Abstract: J-STD-020A
    Text: DS1213B SmartSocket 16k/64k www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 2K x 8 or 8K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with proper RAM selection


    Original
    PDF DS1213B 16k/64k 28-Pin DS1213B 600-MIL 28-PIN J-STD-020A

    DS1213B

    Abstract: DS1213
    Text: DS1213B SmartSocket 16k/64k www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 2K x 8 or 8K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with proper RAM selection


    Original
    PDF DS1213B 16k/64k 28-Pin DS1213B 600-MIL 28-PIN DS1213

    ZMD AG

    Abstract: No abstract text available
    Text: Preliminary UL62H1616A Low Voltage Automotive Fast 64K x 16 SRAM Features Description ! 65536 x 16 bit static CMOS RAM ! 15, 20 and 35 ns Access Time ! Common data inputs and The UL62H1616A is a static RAM manufactured using a CMOS process technology with the following


    Original
    PDF UL62H1616A UL62H1616A D-01109 D-01101 ZMD AG

    ZMD AG

    Abstract: No abstract text available
    Text: UL62H256A Low Voltage Automotive Fast 32K x 8 SRAM Features Description ! 32768 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The UL62H256A is a static RAM manufactured using a CMOS process technology with the following operating modes:


    Original
    PDF UL62H256A UL62H256A D-01109 D-01101 ZMD AG

    U62H1708

    Abstract: ZMD AG
    Text: Preliminary U62H1708 Automotive Fast 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The U62H1708 is a static RAM manufactured using a CMOS process technology with the following operating modes:


    Original
    PDF U62H1708 U62H1708 D-01109 D-01101 ZMD AG

    U62H256

    Abstract: A128C JEP95 U62H256S 075E06 *62h256
    Text: U62H256S Automotive Fast 32K x 8 SRAM Features Description F 32768 x 8 bit static CMOS RAM F 35 and 55 ns Access Time F Common data inputs and The U62H256S is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read


    Original
    PDF U62H256S U62H256S JEP95 MO-059 QS-000733-HD-02 U62H256 A128C 075E06 *62h256

    Untitled

    Abstract: No abstract text available
    Text: L6 1 1 6 2K x 8 Static RAM Features Description_ □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data


    OCR Scan
    PDF L6116

    Untitled

    Abstract: No abstract text available
    Text: L7C162 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Impedance Write The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and


    OCR Scan
    PDF L7C162 L7C162 dMB20 L7C162CMB15 5/24/94-L 28-pin L7C162KC20 L7C162KC15 L7C162KC12

    Untitled

    Abstract: No abstract text available
    Text: 128KX8 NON-VOLATILE RAM M s iR u m m u R • • • • • • GR12882 Plug-in replacement for Static RAM 20 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles GR12882 is 128 kilobyte of non-volatile memory which is pin-compatible with normal Static RAM and offers immediate conversion to


    OCR Scan
    PDF 128KX8 GR12882 GR12882

    Untitled

    Abstract: No abstract text available
    Text: ^E D I _ EDI8464C Etoctionte P w lqn» Inc. High Speed 256K Monolithic SRAM 64Kx4 Static RAM CMOS, High Speed Monolithic Features The EDI8464C isahigh performance CMOS Static RAM organized as 64Kx4 and it is also available in a low power version, EDI8464LP, with data retention.


    OCR Scan
    PDF EDI8464C 64Kx4 EDI8464C EDI8464LP, MIL-STD-883, AocessTimes25 45and

    Untitled

    Abstract: No abstract text available
    Text: LOGIC DEVICES INC 2bE D • SSbSTGS OGQlQib 3 ■ 2 x 4 K x 16 Cache-Data Static RAM DESCRIPTION FEATURES □ 2 x 4K x 16 or 8K x 16 Cache-Data Static RAM with Direct Map or Two-Way Set Associative □ Auto-Powerdown Design □ Advanced CMOS Technology


    OCR Scan
    PDF CY7C183/184 48-pin 52-pin L7C183/184 L7C183 L7C184

    a6059

    Abstract: No abstract text available
    Text: M ilitary Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Preliminary Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER May 1996 FEATURES a a a □ □ INTRODUCTION 45ns and 55ns maximum address access time Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM


    OCR Scan
    PDF UT7C138/139 11L/CM MIL-STD-883 DPRAM-1-5-96 a6059