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    LEDIL C13868_LENA-STD-BASE-VERO13-18

    LED Lighting Mounting Accessories Base part round
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    Mouser Electronics C13868_LENA-STD-BASE-VERO13-18 7
    • 1 $2.23
    • 10 $1.71
    • 100 $1.71
    • 1000 $1.4
    • 10000 $1.31
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    KOA Speer Electronics Inc RK73K2ESTD131J

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    Bristol Electronics RK73K2ESTD131J 5,000
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    STD131 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STD131 ASIC Samsung Electronics High Density Memories Original PDF
    STD131 ASIC Samsung Electronics Primitive Miscellanies Original PDF
    STD131 ASIC Samsung Electronics Primitive Overview Original PDF
    STD131 ASIC Samsung Electronics Maximum fanout Original PDF
    STD131 ASIC Samsung Electronics Equivalent standard load for layers Original PDF
    STD131 ASIC Samsung Electronics Book Contents Original PDF
    STD131 ASIC Samsung Electronics Introduction Original PDF
    STD131 ASIC Samsung Electronics Glossary of analog terms Original PDF
    STD131 ASIC Samsung Electronics Package capabilities Original PDF
    STD131 ASIC Samsung Electronics Characteristics Original PDF
    STD131 ASIC Samsung Electronics STD130 Brochure Original PDF
    STD131 ASIC Samsung Electronics Low Power Memories Original PDF
    STD131 ASIC Samsung Electronics PLL 2073X Original PDF
    STD131 ASIC Samsung Electronics Primitive Logic Cells Original PDF
    STD131 ASIC Samsung Electronics Primitive Flip-Flops Original PDF
    STD131 ASIC Samsung Electronics I-O& I-O IP Overview Original PDF
    STD131 ASIC Samsung Electronics Primitive Latches Original PDF
    STD131 ASIC Samsung Electronics I-O IP Cells Original PDF
    STD131 ASIC Samsung Electronics I-O Cells Original PDF

    STD131 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DSPG

    Abstract: Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler
    Text: V S MSUNG STD131 ELECTRONICS STD131 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device


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    PDF STD131 STD131 24nW/MHz ARM920T/ARM940T, DSPG Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler

    SL 220 YN 2

    Abstract: MX2D2
    Text: BUSHOLDER Cell List Cell Name BUSHOLDER Function Description Bus Holder Logic Symbol Cell Data Input Load SL Y 5.7 Y STD131 3-340 Gate Count 1.33 Samsung ASIC INTERNAL CLOCK DRIVERS Cell List Cell Name Function Description CK2 Internal Clock Driver CMOS 2mA


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    PDF STD131 SL 220 YN 2 MX2D2

    113 y

    Abstract: HA 1329 QN-08 1329 y-448 AO2222
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.147ns, one fanout (SL = 0.00866pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2 ad4d4 ad5


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    PDF 147ns, 00866pF) ao211 ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 ao221 113 y HA 1329 QN-08 1329 y-448 AO2222

    AO211

    Abstract: IX 3354 AO222 ND2D2
    Text: Revision History Based on Hard Copy . - First Edition(V1.0) : June 2001 • Chapter 1 : Introduction(V1.0) • Chapter 2 : DC Electrical Characteristics(V1.1) • Chapter 3 : Internal Macrocells(V2.1) • Chapter 4 : Input/Output Cells(V2.1) • Chapter 5 : Compiled Macrocells(V1.1)


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    PDF STD131 AO211 IX 3354 AO222 ND2D2

    CL 2181

    Abstract: SL 1088 PHSOSCK17 PHSOSCK27
    Text: INPUT CLOCK DRIVERS Cell List Cell Name Function Description PSCKDC 2/4/6/8 1.8V CMOS Level Input Clock Driver PSCKDCD(2/4/6/8) 1.8V CMOS Level Input Clock Driver with Pull-Down PSCKDCU(2/4/6/8) 1.8V CMOS Level Input Clock Driver with Pull-Up PSCKDS(2/4/6/8)


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    PDF STD131 CL 2181 SL 1088 PHSOSCK17 PHSOSCK27

    SAMSUNG 834

    Abstract: No abstract text available
    Text: Appendix Package Capabilities D Package Appendix D Package The most current package availability and capability can be obtained from your local Samsung Technology and Design Centers. • In-house ❏ Sub-contractor LQFP Package 0707 mm 1010 mm 1212 mm 1420 mm


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    PDF STD131 SAMSUNG 834

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


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    PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    5v library

    Abstract: STD130
    Text: Input/Output Cells 4 Contents Summary Tables .4-2


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    PDF ABB/PHOAR10 ABB/PHOAR50 STD131 5v library STD130

    samsung electrolytic capacitor

    Abstract: frequency divider block diagram SAMSUNG DATASHEET CHIP CAPACITOR PLL2073X SAMSUNG CHIP CAPACITOR
    Text: PLL 6 Contents PLL2073X . 6-1 PLL2073X General Description Features The PLL2073X is a Phase-Locked Loop PLL frequency synthesizer constructed in CMOS on a


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    PDF PLL2073X PLL2073X 20MHz 300MHz 120ps STD131 samsung electrolytic capacitor frequency divider block diagram SAMSUNG DATASHEET CHIP CAPACITOR SAMSUNG CHIP CAPACITOR

    AO222

    Abstract: OA211 diode oa31 diode AO211 ND3B LD5Q AO2222 OA31 AO311 datasheet for full adder and half adder
    Text: Internal Macrocells 3 Contents Overview . 3-1 Summary Tables. 3-2


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    PDF STD131 AO222 OA211 diode oa31 diode AO211 ND3B LD5Q AO2222 OA31 AO311 datasheet for full adder and half adder

    LD6QD2

    Abstract: SL 220 TR 069 LD5Q LD4D2
    Text: LATCHES Cell List Cell Name Function Description LD1 D Latch with Active High, 1X Drive LD1D2 D Latch with Active High, 2X Drive LD1Q D Latch with Active High, Q Output Only, 1X Drive LD1QD2 D Latch with Active High, Q Output Only, 2X Drive LD2 D Latch with Active High, Reset, 1X Drive


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    PDF STD131 LD6QD2 SL 220 TR 069 LD5Q LD4D2

    CL 2182

    Abstract: CL 1221 cl 5403 A 1908 SL 2042 CMOS 4039
    Text: INPUT BUFFERS Cell List Cell Name Function Description PIC/PICD/PICU 1.8V Interface CMOS Level Input Buffers PMIC/PMICD/PMICU 2.5V Interface CMOS Level Input Buffers PHIC/PHICD/PHICU 3.3V Interface LVCMOS Level Input Buffers PTIC/PTICD/PTICU 3.3V-tolerant for 1.8V Interface CMOS Level Input Buffers


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    PDF STD131 CL 2182 CL 1221 cl 5403 A 1908 SL 2042 CMOS 4039

    tda 85630

    Abstract: tda 7625 TDA 1007 tda 1282 tda 1700 bpw 104 tda 810 tda 1512 tda 266 TDA 452
    Text: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1


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    PDF STD131 tda 85630 tda 7625 TDA 1007 tda 1282 tda 1700 bpw 104 tda 810 tda 1512 tda 266 TDA 452

    38661

    Abstract: 17356
    Text: Appendix Equivalent Standard Loads for 4-layer, 5-layer and 6-layer Metal Interconnect B Equivalent Standard Loads for 4-layer and 5-layer Metal Interconnect Appendix B Equivalent Standard Loads for 4-layer and 5-layer Metal Interconnect Gate Count Fanouts


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    PDF STD131 38661 17356

    Untitled

    Abstract: No abstract text available
    Text: Appendix Glossary of Analog Terms A Digital-to-Analog Converter Digital-to-Analog Converter Appendix A 1. Resolution - An n-bit binary converter should be able to provide 2n distinct and different analog output values corresponding to the set of n-bit binary words. A


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    PDF STD131

    top 261 yn

    Abstract: ARM9TDMI samsung display port verilog code for decimation filter TAG 8952 Bi-Directional P-Channel LPG CRT Power Supply schematic diagram samsung led SK 9080 verilog code for UART with BIST capability
    Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2


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    PDF STD131 top 261 yn ARM9TDMI samsung display port verilog code for decimation filter TAG 8952 Bi-Directional P-Channel LPG CRT Power Supply schematic diagram samsung led SK 9080 verilog code for UART with BIST capability

    TDA 7588

    Abstract: tda 7387 TDA 1157 TDA 2310 TDA 1038 TDA 3612 55320 tda 1171 240/tda 12122 tda 2253
    Text: SPSRAM_LP Low-Power Single-Port Synchronous Static RAM Features Logic Symbol spsram_lp_<w>x<b>m<y> CK CSN WEN DOUT [b–1:0] OEN A [m-1:0] DI [b–1:0] NOTES: 1. Words w is the number of words. 2. Bpw(b) is the number of bits per word. 3. Ymux(y) is one of the column mux types.


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    PDF 512Kbits STD131 TDA 7588 tda 7387 TDA 1157 TDA 2310 TDA 1038 TDA 3612 55320 tda 1171 240/tda 12122 tda 2253

    B12 diode

    Abstract: 3.3v to 5v buffer latch
    Text: Electrical Characteristics 2 Contents DC Electrical Characteristics . 2-1 ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS VDD = 1.8V± 0.15V, TA = -40 to 85°C, VEXT = 3.3V ± 0.3V In case of 3.3V tolerant


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    PDF STD131 B12 diode 3.3v to 5v buffer latch

    AO222

    Abstract: SL 220 AO211 AO22
    Text: LOGIC CELLS Cell Names & Function Descriptions Cell Name Function Description AD2 2-Input AND with 1X Drive AD2D2 2-Input AND with 2X Drive AD2D4 2-Input AND with 4X Drive AD2D8 2-Input AND with 8X Drive AD2B 2-Input AND with one Inverted Input, 1X Drive AD2BD2


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    PDF STD131 AO222 SL 220 AO211 AO22

    Untitled

    Abstract: No abstract text available
    Text: MIL-M-38510/220A USAF QU A L I F I C A T I O N REQUIREMENTS REMOVED MIL-M-38510/220ÎUSAF) 26 M a r c h 1979 MILITARY SPECIFICATION M I C R O C I R C U I T S , DIGI T A L , 8 1 9 2 BIT. MOS, U L T R A V I O L E T E RASABLE P R O G R A M M A B L E R E A D - O N L Y M E M O R Y (EPROM)


    OCR Scan
    PDF MIL-M-38510/220A MIL-M-38510/220Ã MIL-M-38510 MIL-H-38510 MIL-K-38510. 5962-F647-2)