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    STMicroelectronics STGWT60V60DF

    IGBT TRENCH FIELD STOP 600V 80A
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    STMicroelectronics STGWT60V60DF 1
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    TME STGWT60V60DF 1
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    Avnet Silica STGWT60V60DF 143 Weeks 30
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    STGWT60V60DF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STGWT60V60DF STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 375W TO3P Original PDF

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    Catalog Datasheet MFG & Type Document Tags PDF

    GW60V60DF

    Abstract: No abstract text available
    Text: STGW60V60DF STGWT60V60DF 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Very high speed switching series • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 2 3 3 1 2 1 TO-247 • Low saturation voltage: VCE sat = 1.85 V (typ.)


    Original     		STGW60V60DF STGWT60V60DF O-247 DocID024154 GW60V60DF PDF

    GW60V60DF

    Abstract: gwt60v60df gw60v60
    Text: STGW60V60DF, STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 60 A • Tight parameters distribution


    Original     		STGW60V60DF, STGWT60V60DF O-247 DocID024154 GW60V60DF gwt60v60df gw60v60 PDF

    GW60V60DF

    Abstract: gwt60v60df
    Text: STGW60V60DF STGWT60V60DF 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Very high speed switching series  Maximum junction temperature: TJ = 175 °C  Tail-less switching off 2 3 3 2 1 1 TO-247  Low saturation voltage: VCE sat = 1.85 V (typ.)


    Original     		STGW60V60DF STGWT60V60DF O-247 DocID024154 GW60V60DF gwt60v60df PDF