STK16N10L Search Results

STK16N10L Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
STK16N10L		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
STK16N10L		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

STK16N10L Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
STK16N10L Abstract: STK16N10 Text: STK16N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STK16N10L • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.12 Ω 16 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	PDF	STK16N10L 100oC 175oC OT-82 OT-194 STK16N10L STK16N10
Untitled Abstract: No abstract text available Text: STK16N10L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)15 I(D) Max. (A)16# I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)64 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)65# Minimum Operating Temp (øC)	Original	PDF	STK16N10L
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	PDF	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
STP8N10L Abstract: STK12N STLT20 STLT20FI Text: SELECTION GUIDE - LOGIC: LEVEL V BR DSS (V ) f*D S (o n )^ 0 max Id (A) Type Package max (pF) 1500 1500 1500 400 • 400. 829 829 543 65 7.00 10.00 10.00 4.00 • 4 .0 0 » Ptot 60 110 35 45 (W) (11) Page 571 SOT-82 STK16N10L 16.0 TO-220 ISOW220 SOT-82 STP20N10L	OCR Scan	PDF	OT-82 O-220 ISOW220 1SOW220 ISOW22Û STP8N10L STK12N STLT20 STLT20FI
TDA0161 equivalent Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:	OCR Scan	PDF
16N10L Abstract: A4032 Text: f Z T SGS-THOMSON ^ 7# STK 16N10L N - CHANNEL EN H A N C EM EN T MODE _ LOW TH R ESH O LD PO W ER MOS TR AN SISTO R PRELIMINARY DATA TYPE V S TK16N 10L dss 1 00 V R dS oii Id 0 .1 2 O 16 A . AVALAN C H E RUG G EDN ESS TECHNO LO G Y . 100% AVALAN C H E TESTED	OCR Scan	PDF	16N10L TK16N OT-82 OT-194 STK16N10L A4032
Untitled Abstract: No abstract text available Text: • _ 7^237 Q G 4 b D tlb 233 ■ SGTH r i 7 S G S - T H O M S O N Ä 7# [* ^ o m i(g T O « S _ S TK 16N 10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TK16N 10L ■ ■ . ■ . ■ ■ . . V d ss R D S(on	OCR Scan	PDF	TK16N STK16N10L
TSD45N50V Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000	OCR Scan	PDF	STP30N05 BUZ11A STP25N05 BUZ10 STLT29 BUZ71 IRFZ20 BUZ71A STP17N STLT19 TSD45N50V TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V