STM32F10X-128K-EVAL
Abstract: MB542 AMPIRE AM240320L8TNQW AM240320L8TNQW mb525 MB895 STM32F10x stm32f10x manual hx8312 um0426
Text: UM0426 User manual STM3210B-EVAL evaluation board Introduction The STM3210B-EVAL is an evaluation board for STMicroelectronic’s ARMTM Cortex-M3 core-based STM32F10x 128 K microcontrollers. It is designed as a complete development environment for the STM32F10x microcontrollers with full speed USB2.0, CAN2.0A/B
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UM0426
STM3210B-EVAL
STM3210B-EVAL
STM32F10x
128KB
STM32F10X-128K-EVAL
MB542
AMPIRE AM240320L8TNQW
AM240320L8TNQW
mb525
MB895
stm32f10x manual
hx8312
um0426
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STM32F10X-128K-EVAL
Abstract: AM240320L8TNQW MB525 STM32F10x AMPIRE AM240320L8TNQW AM-240320L8TNQW00H MC306-G-06Q-32 MC306-g-06q AM-240320 ILI9320
Text: UM0426 User manual STM3210B-EVAL evaluation board Introduction The STM3210B-EVAL is an evaluation board for STMicroelectronic’s ARMTM Cortex-M3 core-based STM32F10x 128K microcontrollers. It is designed as a complete development environment for the STM32F10x microcontrollers with full speed USB2.0, CAN2.0A/B
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UM0426
STM3210B-EVAL
STM3210B-EVAL
STM32F10x
128KB
STM32F10X-128K-EVAL
AM240320L8TNQW
MB525
AMPIRE AM240320L8TNQW
AM-240320L8TNQW00H
MC306-G-06Q-32
MC306-g-06q
AM-240320
ILI9320
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Untitled
Abstract: No abstract text available
Text: STD95N04 N-CHANNEL 40V - 5.1mΩ - 80A DPAK Planar STripFET MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STD95N04 • ■ ■ Figure 1: Package VDSS RDS on ID Pw 40 V < 6.5 mΩ 80 A (*) 110 W 100% AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252)
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STD95N04
O-252)
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po102
Abstract: po102bl marking a2s sot-23 P0102BL p0102b sot23 package marking AV 2t sot23 STMicroelectronic MARKING sensitive scrs STMicroelectronics 1CGK
Text: P0102BL 0.25A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT RMS 0.25 A VDRM/VRRM 200 V IGT 200 µA G K A G DESCRIPTION K Thanks to highly sensitive triggering levels, the PO102BL SCR is suitable for all applications where the available gate current is limited such as
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P0102BL
PO102BL
OT-23,
OT-23
po102
marking a2s sot-23
P0102BL
p0102b
sot23 package marking AV
2t sot23
STMicroelectronic MARKING
sensitive scrs STMicroelectronics
1CGK
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std65n55
Abstract: No abstract text available
Text: STD65N55 N-CHANNEL 55V - 8.0mΩ - 65A - DPAK MDmesh Low Voltage Power MOSFET Target Specification General features Package Type VDSS RDS on ID Pw STD65N55 55 V <10.5 mΩ 65A 110 W • SURFACE-MOUNTING DPAK (TO-252) ■ STANDARD THRESHOLD DRIVE ■ 100% AVALANCHE TESTED
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STD65N55
O-252)
std65n55
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Untitled
Abstract: No abstract text available
Text: STD95N04 N-CHANNEL 40V - 5.1mΩ - 80A - DPAK STripFET Power MOSFET Target Specification Package General features Type VDSS RDS on ID Pw STD95N04 40 V <6.5 mΩ 80 A Note 1 110 W 3 • SURFACE-MOUNTING DPAK (TO-252) ■ STANDARD THRESHOLD DRIVE ■ 100% AVALANCHE TESTED
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STD95N04
STD95N04
O-252)
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po102
Abstract: po102bl P0102BL marKing IGM sot-23 MARKING P2B p0102b SOT-23 marking 2s marking a2s sot-23 "tAB" sot-23 GK SOT-23
Text: P0102BL 0.25A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT RMS 0.25 A V DRM/VRRM 200 V IGT 200 µA G K A G DESCRIPTION K Thanks to highly sensitive triggering levels, the PO102BL SCR is suitable for all applications where the available gate current is limited such as
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P0102BL
PO102BL
OT-23,
OT-23
po102
P0102BL
marKing IGM sot-23
MARKING P2B
p0102b
SOT-23 marking 2s
marking a2s sot-23
"tAB" sot-23
GK SOT-23
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JESD97
Abstract: STD95N04 STP95N04
Text: STP95N04 STD95N04 N-CHANNEL 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID Pw STD95N04 STP95N04 40V 40V <6.5mΩ <6.5mΩ 80A 80A 110W 110W 3 • 1 STANDARD THRESHOLD DRIVE 3 1 ■ 100% AVALANCHE TESTED DPAK
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STP95N04
STD95N04
O-220
JESD97
STD95N04
STP95N04
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40V 60A MOSFET
Abstract: B180N55 JESD97 P180N55 STB180N55 STP180N55
Text: STB180N55 STP180N55 N-CHANNEL 55V - 2.9mΩ - 120A - D²PAK - TO-220 MDmesh Low Voltage Power MOSFET TARGET SPECIFICATION General features • ■ Type VDSS RDS on ID STB180N55 55V 3.5mΩ 120A (Note 1) STP180N55 55V 3.8mΩ 120A (Note 1) 3 ULTRA LOW ON-RESISTANCE
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STB180N55
STP180N55
O-220
40V 60A MOSFET
B180N55
JESD97
P180N55
STB180N55
STP180N55
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JESD97
Abstract: STS15N4LLF3
Text: STS15N4LLF3 N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LLF3 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced SO-8 Description
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STS15N4LLF3
JESD97
STS15N4LLF3
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po102
Abstract: po102bl P0102BL p0102b le sot
Text: P0102BL 0.25A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT RMS 0.25 A VDRM/VRRM 200 V IGT 200 µA G K A c u d G DESCRIPTION ) s t( o r P K Thanks to highly sensitive triggering levels, the PO102BL SCR is suitable for all applications where the available gate current is limited such as
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P0102BL
PO102BL
OT-23,
OT-23
po102
P0102BL
p0102b
le sot
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JESD97
Abstract: STS15N4LL
Text: STS15N4LL N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LL 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced SO-8 Description
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STS15N4LL
JESD97
STS15N4LL
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Untitled
Abstract: No abstract text available
Text: STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1mΩ - 160A - D²PAK / I²PAK / TO-220 STripFET Power MOSFET Target Specification General features Package Type VDSS RDS on ID Note 1 Pw STB270N04-1 STB270N04T4 STP270N04 40 V 40V 40V <2.9 mΩ <2.5 mΩ
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STB270N04
STB270N04-1
STP270N04
O-220
STB270N04-1
STB270N04T4
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Untitled
Abstract: No abstract text available
Text: STD65N55 N-channel 55V - 8.0mΩ - 65A - DPAK MDmesh low voltage Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID Pw STD65N55 55V <10.5mΩ 65A 110W • Standard threshold drive ■ 100% avalanche tested 3 1 DPAK Description This N-Channel enhancement mode Power
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STD65N55
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STP185N55
Abstract: No abstract text available
Text: STB185N55 STP185N55 N-CHANNEL 55V - 2.9mΩ - 120A - D²PAK - TO-220 MDmesh Low Voltage Power MOSFET TARGET SPECIFICATION General features • ■ Type VDSS RDS on ID STB185N55 55V 3.5mΩ 120A (Note 1) STP185N55 55V 3.8mΩ 120A (Note 1) 3 ULTRA LOW ON-RESISTANCE
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STB185N55
STP185N55
O-220
O-220
STP185N55
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D-PAK
Abstract: P270N04 STB270N04-1 STP270N04 B270N04 JESD97 STB270N04
Text: STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1mΩ - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS on ID PTOT STB270N04-1 40V <2.9mΩ 120A 330W STB270N04 40V <2.5mΩ 160A 330W STP270N04 40V <2.9mΩ 120A 330W
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STB270N04
STB270N04-1
STP270N04
O-220
STB270N04-1
O-220
D-PAK
P270N04
STP270N04
B270N04
JESD97
STB270N04
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D100N03L
Abstract: JESD97 STD100N03L STD100N03L-1 STD100N03LT4
Text: STD100N03L-1 STD100N03L N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET MOSFET General features Package Type VDSSS STD100N03L 30 V <0.0055 Ω 80 A 1 110 W STD100N03L-1 30 V <0.0055 Ω 80 A(1) 110 W RDS(on) ID Pw 3 3 • 100%AVALANCHE TESTED
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STD100N03L-1
STD100N03L
O-252)
D100N03L
JESD97
STD100N03L
STD100N03L-1
STD100N03LT4
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N-Channel 40V MOSFET 32a
Abstract: JESD97 STD60N55 STD60N55-1 fr 0204
Text: STD60N55-1 STD60N55 N-channel 55V - 8.0mΩ - 65A - DPAK - IPAK MDmesh low voltage Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID Pw STD60N55 55V <10.5mΩ 65A 110W STD60N55-1 55V <10.5mΩ 65A 110W • Standard threshold drive ■
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STD60N55-1
STD60N55
N-Channel 40V MOSFET 32a
JESD97
STD60N55
STD60N55-1
fr 0204
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B185N55
Abstract: JESD97 P185N55 STB185N55 STP185N55 JEDEC to 243 ST
Text: STB185N55 STP185N55 N-channel 55V - 2.9mΩ - 120A - D2PAK/TO-220 MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB185N55 55V 3.5mΩ 120A(1) STP185N55 55V 3.8mΩ 120A(1) 1. Value limited by wire bonding •
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STB185N55
STP185N55
D2PAK/TO-220
O-220
B185N55
JESD97
P185N55
STB185N55
STP185N55
JEDEC to 243 ST
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Untitled
Abstract: No abstract text available
Text: STB180N55 STP180N55 N-channel 55V - 2.9mΩ - 120A - D2PAK/TO-220 MDmesh low voltage Power MOSFET Target Specification General features Type VDSS RDS on ID STB180N55 55V 3.5mΩ 120A(1) STP180N55 55V 3.8mΩ 120A(1) 1. Value limited by wire bonding •
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STB180N55
STP180N55
D2PAK/TO-220
STP180N55
O-220
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Untitled
Abstract: No abstract text available
Text: STB185N55 STP185N55 N-channel 55V - 2.9mΩ - 120A - D2PAK/TO-220 MDmesh low voltage Power MOSFET Target Specification General features Type VDSS RDS on ID STB185N55 55V 3.5mΩ 120A(1) STP185N55 55V 3.8mΩ 120A(1) 1. Value limited by wire bonding •
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STB185N55
STP185N55
D2PAK/TO-220
STP185N55
O-220
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JESD97
Abstract: STD95N04 STP95N04
Text: STD95N04 STP95N04 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET Power MOSFET General features • ■ Type VDSS RDS on ID Pw STD95N04 40V <6.5mΩ 80A 110W STP95N04 40V <6.5mΩ 80A 110W Standard threshold drive 3 1 100% avalanche tested DPAK
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STD95N04
STP95N04
O-220
JESD97
STD95N04
STP95N04
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B180N55
Abstract: JESD97 P180N55 STB180N55 STP180N55
Text: STB180N55 STP180N55 N-channel 55V - 2.9mΩ - 120A - D2PAK/TO-220 MDmesh low voltage Power MOSFET Target Specification General features Type VDSS RDS on ID STB180N55 55V 3.5mΩ 120A(1) STP180N55 55V 3.8mΩ 120A(1) 1. Value limited by wire bonding •
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STB180N55
STP180N55
D2PAK/TO-220
B180N55
JESD97
P180N55
STB180N55
STP180N55
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Untitled
Abstract: No abstract text available
Text: STS15N4LLF3 N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LLF3 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced ) s ( ct u d
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STS15N4LLF3
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