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    STN3400 Search Results

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    SOP-23

    Abstract: 5.8A, 25V, N Channel MOSFET SOP-23-3L switching TRANSISTOR mosfet 30V 40A n channel enhancement MOSFET STN3400 42m-ohm n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR N-Channel, 30V, 4.0A, Power MOSFET
    Text: N Channel Enhancement Mode MOSFET STN3400 5.8A DESCRIPTION The STN3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These


    Original     		STN3400 STN3400 OP-23-3L 38m-ohm 42m-ohm 55m-ohm OT-23-3L SOP-23 5.8A, 25V, N Channel MOSFET SOP-23-3L switching TRANSISTOR mosfet 30V 40A n channel enhancement MOSFET 42m-ohm n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR N-Channel, 30V, 4.0A, Power MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: ST3400SRG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These


    Original     		ST3400SRG ST3400SRG OT-23 STN3400SRG OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These


    Original     		ST3400S23RG ST3400S23RG OT-23-3L STN3400S23RG OT-23-3L PDF

    5.8A, 25V, N Channel MOSFET

    Abstract: Power MOSFET N-Channel sot-23 ST3400SRG marking CODE "25M" SOT23 -3 MARKING 25M SOT23 marking CODE TF-450 TF 450 MOSFET N SOT-23 Diode SOT-23 marking 27
    Text: ST3400SRG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These


    Original     		ST3400SRG ST3400SRG OT-23 STN3400SRG OT-23 5.8A, 25V, N Channel MOSFET Power MOSFET N-Channel sot-23 marking CODE "25M" SOT23 -3 MARKING 25M SOT23 marking CODE TF-450 TF 450 MOSFET N SOT-23 Diode SOT-23 marking 27 PDF