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    STP36N06 Search Results

    STP36N06 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP36N06 STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STP36N06 STMicroelectronics N - Channel Enhancement Mode Power MOS Transistor Original PDF
    STP36N06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP36N06 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STP36N06FI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP36N06FI STMicroelectronics N - Channel Enhancement Mode Power MOS Transistor Original PDF
    STP36N06FI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP36N06FI Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STP36N06L STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STP36N06L STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP36N06L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP36N06LFI STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STP36N06LFI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP36N06LFI Toshiba Power MOSFETs Cross Reference Guide Original PDF

    STP36N06 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    stp36n06v

    Abstract: STP36N06 STP36N06FI 144AA
    Text: STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP36N06 STP36N06FI 100oC 175oC O-220 ISOWATT220 stp36n06v STP36N06 STP36N06FI 144AA PDF

    STP36N05L

    Abstract: STP36N05LFI STP36N06L STP36N06LFI UA36A airbag
    Text: STP36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.033 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP36N06L STP36N06LFI STP36N05L STP36N05LFI 100oC O-220 STP36N05L STP36N05LFI STP36N06L STP36N06LFI UA36A airbag PDF

    STP36N06

    Abstract: STP36N06FI
    Text: STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP36N06 STP36N06FI 100oC 175oC O-220 ISOWATT220 STP36N06 STP36N06FI PDF

    STP36N06

    Abstract: STP36N06FI airbag C3621
    Text: STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP36N06 STP36N06FI 100oC 175oC O-220 ISOWATT220 STP36N06 STP36N06FI airbag C3621 PDF

    C2514

    Abstract: STP36N05L STP36N05LFI STP36N06L STP36N06LFI
    Text: STP36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.033 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP36N06L STP36N06LFI STP36N05L STP36N05LFI 100oC 175oC O-220 C2514 STP36N05L STP36N05LFI STP36N06L STP36N06LFI PDF

    STP32N06L

    Abstract: STP32N06LFI
    Text: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP32N06L STP32N06LFI 100oC O-220 STP32N06L STP32N06LFI PDF

    STE30NA50-DK

    Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


    Original     		OT-82 OT-223 O-220 220TM MAX220TM 218TM O-247 MAX247TM Max247 Max220 STE30NA50-DK ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220 PDF

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original     		OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20 PDF

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR PDF

    STP32N06L

    Abstract: STP32N06LFI
    Text: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP32N06L STP32N06LFI 100oC O-220 STP32N06L STP32N06LFI PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    STP32N06L

    Abstract: STP32N06LFI
    Text: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP32N06L STP32N06LFI 100oC 175oC O-220 STP32N06L STP32N06LFI PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


    Original     		Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008 PDF

    STP3N60FI

    Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
    Text: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L ✠ STP3020L


    Original     		O-220 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP3N60FI IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E STP36N 05L S TP36N05LFI SGS-THOMSON STP36N06L STP36N06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STP36N TP36N05LFI STP36N06L STP36N06LFI STP36N06L/FI ISQWATT220 PDF

    transistor tc 144

    Abstract: No abstract text available
    Text: ¿57 TYP E STP36N06 S TP36N06FI S G S -T H O M S O N ¡U È T O « S T P 36 N06 S T P 3 6 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		STP36N06 TP36N06FI STP36N06/FI ISQWATT220 transistor tc 144 PDF

    36N06

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON iL iO M K I stp36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N 05LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A T Y P IC A L RDS(on) = 0.033 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		36N06L STP36N06LFI STP36N05L STP36N 05LFI 36N06 PDF

    OT 306

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON s t p 3 6 n o6 STP36N 06FI ilLiCTIIMDe N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0 .0 4 a < 0 .0 4 a 36 A 21 A T Y P IC A L RDS(on) = 0.03 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		STP36N STP36N06 STP36N06FI OT 306 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON 5 STP36N06 STP36N06FI M 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI ! Vdss R D S on I 60 V 60 V 0.04 Q 1 0 04 U Id 36 A 20 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		STP36N06 STP36N06FI O-220 ISOWATT220 89lraS STP36N06/FI PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: S G S - T H O M ¿ 5 STP32N06L STP32N06LFI S O N ¡mera « 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP32N 06L STP32N 06LFI V dss RDS on Id 60 V 60 V < 0 .055 Q. < 0 .055 Q. 32 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		STP32N06L STP32N06LFI TP32N STP32N 06LFI STP36N06L/FI ISQWATT220 PDF