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    STPSC8H065DI Search Results

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    STPSC8H065DI Price and Stock

    STMicroelectronics STPSC8H065DI

    DIODE SIC 650V 8A TO220AC INS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STPSC8H065DI Tube 823 1
    • 1 $4.22
    • 10 $4.22
    • 100 $4.22
    • 1000 $1.49688
    • 10000 $1.45563
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    Avnet Americas STPSC8H065DI Tube 19 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.47405
    • 10000 $1.4065
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    Mouser Electronics STPSC8H065DI 823
    • 1 $2.19
    • 10 $1.51
    • 100 $1.46
    • 1000 $1.46
    • 10000 $1.45
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    STMicroelectronics STPSC8H065DI 823 1
    • 1 $2.15
    • 10 $1.48
    • 100 $1.43
    • 1000 $1.43
    • 10000 $1.43
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    Future Electronics STPSC8H065DI Tube 19 Weeks 1,000
    • 1 -
    • 10 -
    • 100 $1.56
    • 1000 $1.47
    • 10000 $1.43
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    STPSC8H065DI Tube 19 Weeks 1,000
    • 1 -
    • 10 -
    • 100 $1.56
    • 1000 $1.47
    • 10000 $1.43
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    TME STPSC8H065DI 1
    • 1 $3.15
    • 10 $2.83
    • 100 $2.25
    • 1000 $2.1
    • 10000 $2.1
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    Avnet Silica STPSC8H065DI 1,700 17 Weeks 50
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    EBV Elektronik STPSC8H065DI 1,250 20 Weeks 50
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    STPSC8H065DI Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STPSC8H065DI STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 8A TO-220AC Original PDF

    STPSC8H065DI Datasheets Context Search

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    Abstract: No abstract text available
    Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		PDF STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603