POWER MOSFET 4600
Abstract: 1A 700V MOSFET
Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM2N70
O-220
O-251
O-252
TSM2N70
POWER MOSFET 4600
1A 700V MOSFET
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APQ03SN80AB
Abstract: MOSFET 800V 3A 800VVGS
Text: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ03SN80AB
00V/3A
APQ03SN80AB-XXM0
APQ03SN80AB
MOSFET 800V 3A
800VVGS
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fqt1n80
Abstract: No abstract text available
Text: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQT1N80TF
fqt1n80
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FDA20
Abstract: *20N50F
Text: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDA20N50
FDA20
*20N50F
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APQ57SN10BH
Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ57SN10BH
00V/57A
APQ57SN10BH-XXM0
APQ57SN10BH
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A1270
Abstract: 55C160 APT84M50B2 APT84M50L MIC4452
Text: APT84M50B2 APT84M50L 500V, 84A, 0.065Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT84M50B2
APT84M50L
O-264
O-247
A1270
55C160
APT84M50B2
APT84M50L
MIC4452
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MIC4452
Abstract: APT8M100B APT8M100S
Text: APT8M100B APT8M100S 1000V, 8A, 1.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT8M100B
APT8M100S
MIC4452
APT8M100B
APT8M100S
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8114
Abstract: APT12M80B APT12M80S MIC4452
Text: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT12M80B
APT12M80S
8114
APT12M80B
APT12M80S
MIC4452
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APT9M100B
Abstract: APT9M100S MIC4452
Text: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT9M100B
APT9M100S
APT9M100B
APT9M100S
MIC4452
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APT7M120B
Abstract: APT7M120S MIC4452
Text: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT7M120B
APT7M120S
APT7M120B
APT7M120S
MIC4452
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Magtek 21006516
Abstract: iso 7811-2 21006516 magtek ISO 7811-6 MAGNETIC HEAD iso 7811-2 2001 2F SMD MAG-TEK MAGNETIC HEAD circuit
Text: Magnetic Stripe F/2F Read/Decode Integrated Circuit 21006516 SMD SOIC General Information The F/2F Read/Decode Integrated Circuit in intended for use in recovering F/2F encoded data received from a magnetic head. Features • 150 to more than 12,000 F/2F bits per second
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APT56M50B2
Abstract: APT56M50L MIC4452
Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT56M50B2
APT56M50L
O-264
O-247
APT56M50B2
APT56M50L
MIC4452
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APT58M80J
Abstract: MIC4452
Text: APT58M80J 800V, 60A, 0.10Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT58M80J
E145592
APT58M80J
MIC4452
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APT4M120K
Abstract: MIC4452
Text: APT4M120K 1200V, 5A, 3.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT4M120K
O-220
APT4M120K
MIC4452
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7N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N50 Preliminary Power MOSFET 7A, 500V N-CHANNEL POWER MOSFET 1 The UTC 7N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220
O-220F1
QW-R502-527
7N50
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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24N50
24N50
QW-R502-533
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mosfet 20n60
Abstract: 20n60
Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N60
20N60
QW-R502-587
mosfet 20n60
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11N4
Abstract: 11N40
Text: UNISONIC TECHNOLOGIES CO., LTD 11N40 Power MOSFET 11.4A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for
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11N40
11N40
QW-R502-219
11N4
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UC 493
Abstract: 9N80
Text: UNISONIC TECHNOLOGIES CO., LTD 9N80 Preliminary Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a
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O-220
O-220F1
QW-R502-493
UC 493
9N80
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8N40
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 8N40 Preliminary Power MOSFET 8 A, 400 V N-CHANNEL POWER MOSFET 1 The UTC 8N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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O-220
O-220F1
QW-R502-577
8N40
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480b
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N80 Preliminary Power MOSFET 2A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a
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O-220F
O-252
QW-R502-480
480b
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11n90
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 11N90 Preliminary 11 Amps, 900 Volts N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in
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11N90
O-220
11N90
O-220F1
QW-R502-497
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ISD18A
Abstract: MOSFET 500V 18A 18n50
Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 500V, 18A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N50 is an N-channel enhancement mode Power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.
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18N50
18N50
QW-R502-477
ISD18A
MOSFET 500V 18A
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Untitled
Abstract: No abstract text available
Text: SIEMENS FEATURES SFH 484501 5 X 40 STRIPE ARRAY Package Dimensions in mm • GRINSCH-Quantum-Well Structure with Dielectric Coating Asymmetrical • • • • • Monochromatic Radiation Source High Output Power Mounted on a 10 mm Row High Package Density (1 w/cm)
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