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    Untitled

    Abstract: No abstract text available
    Text: M470L6423DN0 200pin DDR SDRAM SODIMM 512MB DDR SDRAM MODULE 64Mx64 based on sTSOP 32Mx8 DDR SDRAM 200pin SODIMM 64bit Non-ECC/Parity Revision 0.0 May 2002 Rev. 0.0 May 2002 M470L6423DN0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (May 2002) - First release.


    Original     		PDF M470L6423DN0 200pin 512MB 64Mx64 32Mx8 64bit

    K4S280832CNL

    Abstract: No abstract text available
    Text: shrink-TSOP K4S280832C-N CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S280832C-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8


    Original     		PDF K4S280832C-N K4S280832C-N 54-sTSOP K4S280832CNL

    BS62LV256-70

    Abstract: M5M5408 BS62UV256-15 M5M5408B-55 t0808
    Text: Package Descriptions PC / PI = PDIP SRAM CROSS REFERENCE 7700 Irvine Center Dr. STE: 420 SC / SI = SOP Irvine, CA 92618 Contact: TC / TI = TSOP Lena Patel STC / STI = STSOP BC / BI = BGA 8 x 10 email: [email protected] Phone Number: 949-789-6274 Fax Number: 949-789-6277


    Original     		PDF 32Kx8 128Kx8 256Kx8 BS62XV256-25 BS62UV256-15 BS62LV256-70 BS62XV1024-25 BS62UV1024-15 BS62LV1024-70 BS62XV2000-25 BS62LV256-70 M5M5408 BS62UV256-15 M5M5408B-55 t0808

    ly62l256

    Abstract: No abstract text available
    Text:  LY62L256 32K X 8 BIT LOW POWER CMOS SRAM Rev. 1.3 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Description Initial Issue Revised STSOP Package Outline Dimension Deleted L Spec. Revised VTERM to VT1 and VT2 Revised Test Condition of ISB1/IDR


    Original     		PDF LY62L256 28-pin ly62l256

    Untitled

    Abstract: No abstract text available
    Text: HY62U8100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Revised - Insert 70ns Part Jul.25.2000 Final 11 Change the Notch Location of sTSOP


    Original     		PDF HY62U8100B 128Kx8bit HY62U8100B 100ns

    64Mb samsung SDRAM

    Abstract: DDR333 DDR266
    Text: DDR SDRAM 256Mb E-die x4, x8 DDR SDRAM 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF 256Mb 54pin 64Mb samsung SDRAM DDR333 DDR266

    Untitled

    Abstract: No abstract text available
    Text: 512MB Unbuffered SODIMM based on sTSOP Pb-Free DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 256Mb E-die (x8) with 64-bit Non ECC 54 sTSOP(II) with Pb-Free (RoHS compliant) Revision 1.1 Oct. 2004 Revision 1.1 Oct. 2004 512MB Unbuffered SODIMM(based on sTSOP) Pb-Free


    Original     		PDF 512MB 200pin 256Mb 64-bit M470L6423EV0-C

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.1 Rev. 1.1 November 2004 DDR SDRAM 512Mb B-die (x8) DDR SDRAM 512Mb B-die Revision History Revision 1.0 (October, 2003) - First release Revision 1.1 (November, 2004)


    Original     		PDF 512Mb DDR400 400mil 441mil) 200MHz 400Mbps

    Untitled

    Abstract: No abstract text available
    Text: K6F2008V2M, K6F2008S2M, K6F2008R2M Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 2, 1996 Advance 0.1 Revise - Remove sTSOP1 from product


    Original     		PDF K6F2008V2M, K6F2008S2M, K6F2008R2M 256Kx8 KM68F2000 100ns) 0820F)

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x4, x8 DDR SDRAM 512Mb B-die DDR SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.2 October, 2004 Rev. 1.2 October, 2004 DDR SDRAM 512Mb B-die (x4, x8) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003) - First version for internal review


    Original     		PDF 512Mb 400mil 441mil)

    M470L6524FL0

    Abstract: M470L2923F60
    Text: 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb F-die 66 TSOP-II & 54 sTSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		PDF 512MB, 200pin 512Mb 64Mx8 sTSOPII-300mil K4H510838F-6* M470L6524FL0 M470L2923F60

    Untitled

    Abstract: No abstract text available
    Text: 256MB, 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF 256MB, 512MB, 184pin 512Mb 64Mx8 sTSOPII-300mil K4H510838D-V*

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 256MB, 512MB, 1GB Unbuffered SODIMM Pb-Free DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die with 64 / 72-bit Non ECC / ECC 66 TSOP(II)/54 sTSOP(II) with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revision 1.2 Oct. 2004 256MB, 512MB, 1GB Unbuffered SODIMM Pb-Free


    Original     		PDF 256MB, 512MB, 200pin 512Mb 72-bit

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DDR SDRAM DDR SDRAM 512Mb D-die x8 512Mb D-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (400mil x 441mil) (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF 512Mb 400mil 441mil)

    Untitled

    Abstract: No abstract text available
    Text: LY62W256 32K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Merge 2.7~3.6V and 4.5~5.5V to 2.7~5.5V Revised STSOP Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice.


    Original     		PDF LY62W256 LY62W256 144-bit 28-pin

    Untitled

    Abstract: No abstract text available
    Text: LY61256 32K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.3 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Description Initial Issue Delete Icc1/ ISB Spec. Adding Skinny P-DIP Revised STSOP Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice.


    Original     		PDF LY61256 LY61256 144-bit 28-pin

    K4H511638D

    Abstract: M470L3324DU0
    Text: 256MB, 512MB, 1GB Unbuffered SODIMM Preliminary DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		PDF 256MB, 512MB, 184pin 512Mb 64Mx8 sTSOPII-300mil K4H510838D-V* K4H511638D M470L3324DU0

    K4S561632J

    Abstract: m464s64* samsung K4S560832J
    Text: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb J-die 54 TSOP-II/sTSOP II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF 256MB, 512MB 144pin 256Mb 32Mx8 K4S560832J K4S561632J m464s64* samsung K4S560832J

    DSASW0034363

    Abstract: DDR266 DDR333 DDR400 DDR500
    Text: DDR SDRAM Code Information 1/2 Last Updated : August 2009 K4HXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 11. "─" 2. DRAM : 4 12. Package T : TSOP2 U : TSOP2 (Lead Free) L : TSOP2 (Lead-Free & Halogen-Free) N : sTSOP2 V : sTSOP2 (Lead Free)


    Original     		PDF 64Mb/128Mb 4K/64ms 128Mb, 512Mb, 8K/64ms 256Mb, DSASW0034363 DDR266 DDR333 DDR400 DDR500

    k4s-x

    Abstract: No abstract text available
    Text: Sync DRAM Code Information 1/2 Last Updated : August 2009 K4SXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 10. Generation 2. DRAM : 4 11. “—” 3. Small Classification S : SDRAM 12. Package N : STSOP2 T : TSOP2 U : TSOP2 (Lead-Free)


    Original     		PDF 2K/32ms 4K/64ms 8K/64ms 256Mb J-die/128Mb PC133 k4s-x

    DDR400

    Abstract: K4H511638B M470L3324BT
    Text: 256MB, 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die 66 TSOP-II & 54 sTSOP-II INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF 256MB, 512MB, 184pin 512Mb 64Mx8 sTSOPII-300mil K4H510838B DDR400 K4H511638B M470L3324BT

    Ablestik

    Abstract: cel-9200u ablestik 84-1LMISR4 140C JESD22 Hitachi CEL
    Text: Cypress Semiconductor Qualification Report QTP# 97213, Version 1.0 February, 1998 32 Ld STSOP Package OSE, Taiwan Assembly Cypress Semiconductor Assembly: OSE, Taiwan Package: 32 Ld STSOP QTP# 97213, V. 1.0 2 of 4 February, 1998 PLASTIC PACKAGE/ASSEMBLY DESCRIPTION


    Original     		PDF 9200U 84-1LMISR4 JESD22-A112 30C/60 CY7C1512-ZAC Ablestik cel-9200u ablestik 84-1LMISR4 140C JESD22 Hitachi CEL

    K4S281632B-N

    Abstract: No abstract text available
    Text: shrink-TSOP CMOS SDRAM K4S281632B-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S281632B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by


    Original     		PDF K4S281632B-N 16Bit K4S281632B-N 54-sTSOP

    Untitled

    Abstract: No abstract text available
    Text: CMOS 1M 128K x 8 Static Ram FEATURES • Access time: 85 ns (MAX.), 100 ns (MAX.) • Current consumption: Operating: 40 mA (MAX.) 6 mA (MAX.) (tRc, twc = 1 M-s) Standby: 45 (MAX.) PIN CONNECTIONS 32-PIN TSOP 32-PIN STSOP / A „ C 1• Ag L 2 Ag C 3 *13 □ 4


    OCR Scan     		PDF 32-pin LH52D1000 LH52D1000 32-pin, TSOP32-P-0820)