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    STT2 MOSFET Search Results

    STT2 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

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    stt2 mosfet

    Abstract: STT2
    Text: STT5NF20V N-CHANNEL 20V - 0.030Ω - 5A SOT23-6L 2.5V-DRIVE STripFET II POWER MOSFET PRELIMINARY DATA TYPE STT5NF20V • ■ ■ ■ VDSS R DS on ID 20 V <0.035Ω (@4.5V) <0.045Ω (@2.5V) 5A TYPICAL RDS(on) = 0.030Ω (@4.5V) TYPICAL RDS(on) = 0.037Ω (@2.5V)


    Original     		OT23-6L STT5NF20V OT23-6L stt2 mosfet STT2 PDF

    7610

    Abstract: marking 7610 STT5NF20V stt2 mosfet
    Text: STT5NF20V N-channel 20 V, 0.030 Ω, 5 A SOT23-6L 2.5 V drive STripFET II Power MOSFET Preliminary data Features Type VDSS STT5NF20V 20 V RDS on ID < 0.035 Ω @ 4.5 V < 0.045 Ω @ 2.5 V 5A Applications • SOT23-6L Switching Description This Power MOSFET is the latest development of


    Original     		STT5NF20V OT23-6L 7610 marking 7610 STT5NF20V stt2 mosfet PDF