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    STY3 Price and Stock

    Rochester Electronics LLC STY30N50E

    NFET T0264 SPCL 500V
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    DigiKey STY30N50E Bulk 58
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    STMicroelectronics STY34NB50

    MOSFET N-CH 500V 34A MAX247
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    DigiKey STY34NB50 Tube
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    ComSIT USA STY34NB50 6
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    STMicroelectronics STY30NK90Z

    MOSFET N-CH 900V 26A MAX247
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    DigiKey STY30NK90Z Tube 600
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    Omega Engineering CIR-2012/120V/STY3/K

    HIGH WATT DENSITY CARTRIDGE HEATERS WITH INCOLOY SHEATH 3/8 (9.525 MM) NOMINAL DIAMETER - Bulk (Alt: CIR-2012/120V/STY3)
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    Avnet Americas CIR-2012/120V/STY3/K Bulk 5 Weeks 1
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    Newark CIR-2012/120V/STY3/K Bulk 1
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    Aptina Imaging STY30N50E

    STY30N50E
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    Verical STY30N50E 5,550 62
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    Find more STY3 price and stock on Findchips.com

    STY3 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STY3004 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    STY3004 Semico Reliable Power Semiconductor Thyristors Scan PDF
    STY30NA50 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STY30NA50 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STY30NK90Z STMicroelectronics N-CHANNEL 900V - 0.25 ? - 26A MAX247 ZENER-PROTECTED SUPERMESH POWER MOSFET Original PDF
    STY30NK90Z STMicroelectronics N-CHANNEL 900V - 0.25 Ohm - 26A MAX247 ZENER-PROTECTED SUPERMESH POWER MOSFET Original PDF
    STY34NB50 STMicroelectronics N- CHANNEL 500 V - 0.11 ? - 34 A - MAX247 POWER Original PDF
    STY34NB50 STMicroelectronics N-CHANNEL 500V - 0.11 Ohm - 34 A - Max247 PowerMESH MOSFET Original PDF
    STY34NB50 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STY34NB50F STMicroelectronics N - CHANNEL 500V - 0.11Ohm - 34 A - Max247 PowerMESH MOSFET Original PDF
    STY34NB50F STMicroelectronics N-Channel 500 V - 0.11 ohm - 34 A - Max247 PowerMESH MOSFET Original PDF
    STY34NK80Z STMicroelectronics N-CHANNEL 800V - 0.20 ? - 28A MAX247 ZENER-PROTECTED SUPERMESHPOWER MOSFET Original PDF

    STY3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STY30NA50

    Abstract: Max247TM ST*30NA50
    Text: STY30NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY30NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.175 Ω 30 A TYPICAL RDS(on) = 0.15 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STY30NA50 Max247TM Max247 O-247, O-264. STY30NA50 Max247TM ST*30NA50

    schematic diagram UPS

    Abstract: STY30NA50 DC/AC to DC smps circuit diagram schematic diagram welding device O247
    Text: STY30NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY30NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.175 Ω 30 A TYPICAL RDS(on) = 0.15 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STY30NA50 Max247TM Max247 O-247, schematic diagram UPS STY30NA50 DC/AC to DC smps circuit diagram schematic diagram welding device O247

    STY34NB50

    Abstract: No abstract text available
    Text: STY34NB50 N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    Original     		PDF STY34NB50 Max247 STY34NB50

    Untitled

    Abstract: No abstract text available
    Text: STY34NK80Z N-CHANNEL 800V - 0.20Ω - 28A Max247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STY34NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.24 Ω 28 A 450 W TYPICAL RDS(on) = 0.20 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STY34NK80Z Max247 Max247

    2N1603A

    Abstract: GE C20C GE C220C Motorola diodes IR-106C1 2N393 2N4171 C222C AEG TO2 MCR106-5
    Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 S107C2 n07C1 C106C C106C1 C106C3 S106C1 S106C2 n06C1 MCR106-5 IR106C1 :~~g~g~ 15 20 IR106C4 IR106C41 Cl0SC Cl0BC Cl0BC STY3004 2N1603A 2Nl776 ~~~H~~ 25 30 2Nl776B SN503 SNS03 TIC10SC Cl0SCl Cl0SCl Cl0SCl


    Original     		PDF S107C2 n07C1 C106C C106C1 C106C3 S106C1 S106C2 n06C1 MCR106-5 IR106C1 2N1603A GE C20C GE C220C Motorola diodes IR-106C1 2N393 2N4171 C222C AEG TO2

    y30nk

    Abstract: Y30NK90Z
    Text: STY30NK90Z N-CHANNEL 900V - 0.25Ω - 26A Max247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STY30NK90Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 900 V < 0.3 Ω 26 A 450 W TYPICAL RDS(on) = 0.25 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STY30NK90Z Max247 Max247 y30nk Y30NK90Z

    Y30NK90Z

    Abstract: STY30NK90Z schematic diagram welding device diode equivalent
    Text: STY30NK90Z N-CHANNEL 900V - 0.21Ω - 26A Max247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STY30NK90Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 900 V < 0.26 Ω 28 A 500 W TYPICAL RDS(on) = 0.25 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STY30NK90Z Max247 Y30NK90Z STY30NK90Z schematic diagram welding device diode equivalent

    y34nb50

    Abstract: smps new STY34NB50 Y34NB
    Text: STY34NB50  N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE ST Y34NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STY34NB50 Max247 Y34NB50 y34nb50 smps new STY34NB50 Y34NB

    pw450

    Abstract: No abstract text available
    Text: STY30NK90Z N-CHANNEL 900V - 0.25Ω - 26A Max247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STY30NK90Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 900 V < 0.3 Ω 26 A 450 W TYPICAL RDS(on) = 0.25 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STY30NK90Z Max247 Max247 pw450

    STY34NB50F

    Abstract: 1590L
    Text: STY34NB50F  N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50F • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.14 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STY34NB50F Max247 STY34NB50F 1590L

    STY34NB50

    Abstract: No abstract text available
    Text: STY34NB50 N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50 • V DSS R DS on ID 500 V < 0.13 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE


    Original     		PDF STY34NB50 Max247 STY34NB50

    STY34NB50F

    Abstract: No abstract text available
    Text: STY34NB50F N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50F • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.14 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STY34NB50F Max247 STY34NB50F

    Y30NK90Z

    Abstract: JESD97 STY30NK90Z
    Text: STY30NK90Z N-channel 900V - 0.21Ω - 26A - Max247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STY30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized


    Original     		PDF STY30NK90Z Max247 Y30NK90Z JESD97 STY30NK90Z

    STY34NB50F

    Abstract: AD 277 J welding equipment smps schematic
    Text: STY34NB50F N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50F • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.14 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STY34NB50F Max247 STY34NB50F AD 277 J welding equipment smps schematic

    STY34NB50

    Abstract: No abstract text available
    Text: STY34NB50 N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    Original     		PDF STY34NB50 Max247 STY34NB50

    28A zener diode

    Abstract: STY34NK80Z schematic diagram welding device STY3
    Text: STY34NK80Z N-CHANNEL 800V - 0.20Ω - 28A Max247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STY34NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.24 Ω 28 A 450 W TYPICAL RDS(on) = 0.20 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STY34NK80Z Max247 28A zener diode STY34NK80Z schematic diagram welding device STY3

    CT-1014

    Abstract: No abstract text available
    Text: STY30NK90Z N-channel 900V - 0.21Ω - 26A - Max247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STY30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized


    Original     		PDF STY30NK90Z Max247 CT-1014

    stu9nc80zi

    Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
    Text: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L


    Original     		PDF STT2PF60L STT3PF30L STT3PF20L STT4NF30L STT1NF100 STT5PF20V STT3PF20V STT5NF20V PowerSO-10, ISOWATT218, stu9nc80zi STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		PDF AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    STY34NB50

    Abstract: No abstract text available
    Text: STY34NB50 N - CHANNEL 500V - 0.11Q - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50 . m . . . . . V dss RDS on Id 500 V < 0.1 3 Q 34 A TYPICAL R d s (o ii) = 0 .1 1 Q EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    OCR Scan     		PDF STY34NB50 Max247 STY34NB50

    ST*30NA50

    Abstract: No abstract text available
    Text: s = 7 S GS-TH O M S O N Ä 7 # K l »iLiM (s iO (gS STY30NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY30NA50 V dss R DS(on) Id 500 V < 0.175 Î2 30 A • TYPICAL Ftos(on) = 0 .1 5 ^ . EFFICIENT AND RELIABLE MOUNTING


    OCR Scan     		PDF STY30NA50 ax247TM ST*30NA50

    STY34NB50

    Abstract: No abstract text available
    Text: STY34NB50 N - CHANNEL 500V - 0.11 - 34 A - Max247 PowerMESH MOSFET TYP E V S TY34N B50 dss 500 V R d S o ii Id < 0 .1 3 Q. 34 A . . TYPICAL RDs(on) = 0.11 EXTREMELY HIGH dv/dt CAPABILITY . ± 30V GATE TO SOURCE VOLTAGE RATING . 100% AVALANCHE TESTED


    OCR Scan     		PDF STY34NB50 Max247 TY34N GC75700 GC75710 Max247 STY34NB50