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    SUB70N03-09BP SPICE DEVICE MODEL Search Results

    SUB70N03-09BP SPICE DEVICE MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    SUB70N03-09BP SPICE DEVICE MODEL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUB70N03-09BP SPICE Device Model Vishay N-Channel 30-V (D-S), 175°C MOSFET PWM Optimized Original PDF

    SUB70N03-09BP SPICE DEVICE MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MOSFET SUB70N03

    Abstract: SUB70N03-09BP SUB70N03-09BP SPICE Device Model
    Text: SPICE Device Model SUP/SUB70N03-09BP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET PWM Optimized CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application


    Original
    SUP/SUB70N03-09BP 0-to10V 02-Oct-01 MOSFET SUB70N03 SUB70N03-09BP SUB70N03-09BP SPICE Device Model PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB70N03-09BP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    SUP/SUB70N03-09BP gate-to-dr10 S-60545Rev. 10-Apr-06 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB70N03-09BP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    SUP/SUB70N03-09BP 18-Jul-08 PDF