Untitled
Abstract: No abstract text available
Text: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
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Original
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SUP85N10-10,
SUB85N10-10
2002/95/EC
O-220AB
O-263
SUP85N10-10
SUP85N10-10-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
|
Original
|
SUP85N10-10,
SUB85N10-10
2002/95/EC
O-220AB
O-263
SUP85N10-10
SUP85N10-10-E3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
|
Original
|
SUP85N10-10,
SUB85N10-10
2002/95/EC
O-220AB
O-263
SUP85N10-10
O-220AB
O-263
SUP85N10-10-E3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP85N10-10, SUB85N10-10 www.vishay.com Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Original
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SUP85N10-10,
SUB85N10-10
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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