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Untitled Abstract: No abstract text available Text: SUN04A65IS New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =2.4Ω (Typ.)  Low gate charge: Qg=12nC (Typ.)  Low reverse transfer capacitance: Crss=6pF (Typ.)  Lower EMI noise  RoHS compliant device	Original	SUN04A65IS SUN04A65 04A65 11-SEP-14 KSD-T6Q025-000	PDF

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Abstract: No abstract text available
Text: SUN04A65IS New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =2.4Ω (Typ.)  Low gate charge: Qg=12nC (Typ.)  Low reverse transfer capacitance: Crss=6pF (Typ.)  Lower EMI noise  RoHS compliant device

Original

SUN04A65IS SUN04A65 04A65 11-SEP-14 KSD-T6Q025-000

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