Untitled
Abstract: No abstract text available
Text: 2/8 TAI-SAW TECHNOLOGY CO., LTD. Crystal Unit SMD 3.2x2.5 12.00MHz MODEL NO.: TZ2237A REV. NO.: 1 Revise: Rev. Rev. Page Rev. Account Date 1 N/A Initial release 6/22/11’ N/A TAI-SAW TECHNOLOGY CO., LTD. Ref. No. Revised by Sam Sung TST DCC Release document
|
Original
|
00MHz
TZ2237A
EIAJED-4701
30min)
06kg/cm
EIAJED-4701-3
B-123A
|
PDF
|
650nm 5mw laser module
Abstract: 650NM laser diode 5mw QL65D6SA QSI 650 QL65
Text: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D6SA Signature of Approval Approvaed by Checked by Issued by Approval by Customer 315-9, Chunheung-ri, Sungger-eup, Chunan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65D6SA InGaAlP Laser Diode
|
Original
|
QL65D6SA
QL65D6SA
650nm
650nm 5mw laser module
650NM laser diode 5mw
QSI 650
QL65
|
PDF
|
VP12
Abstract: 100082 SMP-10008-2 rf attenuator soic f0035
Text: SMP-10008-2 ELECTRONICS Volt3C|G VflNSblG A tte n u a to r Sam sung M ic ro w a v e S e m ic o n d u c to r DC - 8 GHz Description Features The SMP-10008-2 is a high performance Gallium Arsenide GaAs Monolithic Microwave Integrated Circuit MMIC) housed in a low-cost Small Outline Integrated Circuit
|
OCR Scan
|
SMP-10008-2
SMP-10008-2
SMP-100ings
0017R1A
VP12
100082
rf attenuator soic
f0035
|
PDF
|
8512A
Abstract: A12C A15C KM68512A KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND
Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM 68512A fam ily is fabricated by SAM SUNG'S advanced CM O S process technology. The fam ily can support various operating tem perature ragnges
|
OCR Scan
|
KM68512A
64Kx8
32-SOP,
32-TSOP
23b27
8512A
A12C
A15C
KM68512AL
KM68512ALI
KM68512ALI-L
KM68512AL-L
A2ND
|
PDF
|
KM428C257
Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
Text: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual
|
OCR Scan
|
KM428C257
256KX
512x8
110ns
130ns
150ns
110mA
100mA
40-PIN
40/44-PIN
KM428C257
XAL W6
MAS 10 RCD
sc 4145
CNR 14 V 471 K
CA278
CI008
On Screen Display Samsung
|
PDF
|
KMM377S2857AT2-GH
Abstract: KMM377S2857AT2-GL
Text: Preliminary KMM377S2857AT2 SDRAM MODULE K M M 377S2857AT2 SDRAM DIMM Intel 1.1 ver. Base 128M x72 SDR AM DIMM w ith PLL & R egister based on Stacked 128Mx4, 4B anks 8K Ref., 3.3V S D R A M s w ith SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 377S2857AT2 is a 128M bit x 72 S yn
|
OCR Scan
|
KMM377S2857AT2
KMM377S2857AT2
128Mx4,
377S2857AT2
128Mx4
18-bits
24-pin
168-pin
0022uF
KMM377S2857AT2-GH
KMM377S2857AT2-GL
|
PDF
|
46141
Abstract: 4614
Text: OUÏHJI TRIODE TRIODE SE SORTIE ENDIRIODE Heatings indirect by A.C.; parallel supply Chauffage: indirect par C.A.; alimentation en parallèle Heizung: indirekt durch Wechselstrom: Parallelspei sung , mut46 f. Dimensions in mm Dimensions en mm sungen in mm
|
OCR Scan
|
|
PDF
|
km416c1200j
Abstract: km416c1200 MAS 10 RCD 71FC
Text: SUNG ELECTRONICS INC b?E ]> • 7Tmi4E D01b3ña 731 SMGK CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynam ic Random A ccess Memory. Its
|
OCR Scan
|
KM416C1200
KM416C1200-7
130ns
KM416C1200-8
150ns
KM416C1200-10
100ns
180ns
cycles/16ms
km416c1200j
MAS 10 RCD
71FC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM49C512/L/SL 5 1 2 K x 9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM49C512/L/SL is a CMOS high speed 524,288 b i t x 9 D ynam ic Random A ccess Memory. Its design is op tim ized fo r high pe rform ance ap p lica tio n s
|
OCR Scan
|
KM49C512/L/SL
KM49C512/L/SL
KM49C512/L/SL-7
KM49C512/L/SL-8
KM49C512/L/SL-10
130ns
150ns
100ns
180ns
KM49C512/USL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary KMM466S824CT2_ 144pin SDRAM SODIMM KMM466S824CT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION T he Sam sung K M M 466S 824C T2 is a 8M bit x 64 S ynchronous
|
OCR Scan
|
KMM466S824CT2_
144pin
KMM466S824CT2
8Mx64
4Mx16,
466S824CT2
466S824CT2-
100MHz
400mil
144-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary KMM466S823BT2_144pin SDRAM SODIMM KMM466S823BT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION Perform ance range The Sam sung KM M 466S823BT2 is a 8M bit x 64 Synchronous
|
OCR Scan
|
KMM466S823BT2_
144pin
KMM466S823BT2
8Mx64
466S823BT2
100MHz
400mil
144-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b7E » • 7^4142 0 D 1 S 47 7 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM44C256CL is a CMOS high speed 262,144 x 4 D ynam ic Random A ccess M em ory. Its
|
OCR Scan
|
KM44C256CL
256Kx4
KM44C256CL
KM44C256C
110ns
KM44C256CL-7
130ns
KM44C256CL-8
150ns
20-LEAD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KMM372V400AK/AS DRAM MODULE KMM372V400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung K M M 372V 400A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372V400A - 6
|
OCR Scan
|
KMM372V400AK/AS
KMM372V400AK/AS
4Mx72
KMM372V400A
110ns
130ns
48pin
KM44V4000AK,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M372C225AJ KMM372C225AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KMM372C225A is a 2M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C225A - 6 KMM372C225A - 7
|
OCR Scan
|
M372C225AJ
KMM372C225AJ
2Mx72
KMM372C225A
1Mx16bit
400mil
110ns
130ns
|
PDF
|
|
|
KM418C256/L/SL-7
Abstract: No abstract text available
Text: SUNG ELECTRONICS INC bME D KM418C256/L/SL • 7 T b 4 m 2 GGlBMTb 12=5 « S U G K CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM418C256/L/SL is a C MOS high speed 262,144 b it x 18 D ynam ic Random A ccess M em ory. Its
|
OCR Scan
|
KM418C256/L/SL
KM418C256/L/SL
KM418C256/L/SL-7
KM418C256/L/SL-8
KM418C256/L/SL-10
130ns
150ns
100ns
180ns
KM418C256/L/SL-7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M 372V 125AJ 1M x72 D R A M KMM372V125AJ Fast Page M ode D IM M w ith Q C A S , 1 K R e fr e s h , GENERAL DESCRIPTION 3 .3 V FEATURES • Performance Range: The Sam sung K M M 372V 125A is a 1M bit x 72 D ynam ic RAM high density m em ory module. The
|
OCR Scan
|
125AJ
KMM372V125AJ
KMM372V125A
x16bit
110ns
130ns
300mil
48pin
168-pin
|
PDF
|
KMM536256
Abstract: No abstract text available
Text: KMM536256B DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The sung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam sung KM M 536256B consist ot eight CMOS 2 5 6 K X 4
|
OCR Scan
|
KMM536256B
536256B
20-pin
18-pin
72-pin
536256B-
130ns
KMM536256
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM418C256LL 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM418C256LL is a CMOS high speed 262,144 b it x 18 D ynam ic Random A cce ss M em ory. Its de sig n is o p tim ized fo r high perform ance ap p lica tio n s
|
OCR Scan
|
KM418C256LL
KM418C256LL
130ns
KM418C256LL-8
150ns
KM418C256LL-10
100ns
180ns
KM418C256LL-7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM64258E CMOS SRAM Document Tills 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial draft Draft Data Aug. 1 .1 9 9 8 Remark Preliminary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
|
OCR Scan
|
KM64258E
64Kx4
28-SOJ-300
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM41C258 256Kx 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM41C258 is a CMOS high speed 262,144 bit x 1 D ynam ic Random A ccess Mem ory. Its design is op tim ized fo r high perform ance ap p lica tio n s
|
OCR Scan
|
KM41C258
256Kx
KM41C258
100ns
KM41C258-7
KM41C258-8
KM41C258-10
130ns
150ns
180ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM44C4110A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung K M 44 C 4 110 A /A L/A LL /A S L is a high speed C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D ynam ic R andom
|
OCR Scan
|
KM44C4110A/AL/ALL/ASL
110ns
130ns
150ns
KM44C411OA/AL/ALL/ASL
24-LEAD
300MIL)
300MIL,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KMM372C412AK/A S DRAM MODULE KMM372C412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372C412A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C412A - 5
|
OCR Scan
|
KMM372C412AK/A
KMM372C412AK/AS
4Mx72
372C412A
KMM372C412A
300mil
110ns
130ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary PC100 SDRAM MODULE KMM374S1623BT KMM374S1623BT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 374S 1623BT is a 16M bit x 72 Synchronous • Perform ance range
|
OCR Scan
|
PC100
KMM374S1623BT
KMM374S1623BT
16Mx72
1623BT
374S1623BT-G
125MHz
374S1623BT-GH
100MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary KMM377S3227BT2 SDRAM MODULE KMM377S3227BT2 SDRAM DIMM Intel 1.1 ver. Base 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION • Perform ance range The Sam sung KM M 377S3227BT2 is a 32M bit x 72 S ynchro
|
OCR Scan
|
KMM377S3227BT2
KMM377S3227BT2
32Mx72
32Mx4,
377S3227BT2
377S3227BT2-G
18-bits
24-pin
|
PDF
|
