202E
Abstract: D15SB10 D15SB100
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. D15SB10 THRU D15SB100 TECHNICAL SPECIFICATION SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 15A FEATURES D15SB • Glass passivated junction chip • Ideal for printed circuit board
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D15SB10
D15SB100
D15SB
250oC/10sec/
UL-94
D15SB
202E
D15SB100
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PDF
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1N6267
Abstract: 1N6267A 202E 5KE440A 5KE440CA DO-201AE 1.5K75A
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. 1.5KE6.8 THRU 1.5KE440CA TECHNICAL SPECIFICATION TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 1500W FEATURES DO-201AE • 1500W peak pulse power capability • Excellent clamping capability
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5KE440CA
DO-201AE
265oC/10S/9
UL-94
types10
5KE110A
5KE120
5KE120A
5KE130
5KE130A
1N6267
1N6267A
202E
5KE440A
5KE440CA
DO-201AE
1.5K75A
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PDF
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RC30S01G
Abstract: RC30S10G
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC30S01G THRU RC30S10G SILICON GPP CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 30A FEATURES • Glass passivated junction chip • High surge capability • Solderable electrode surfaces • Ideal for hybrids
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RC30S01G
RC30S10G
RC30S
RC30S
RC30S10G
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RC15S01G
Abstract: RC15S10G
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC15S01G THRU RC15S10G SILICON GPP CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 15A FEATURES • Glass passivated junction chip • High surge capability • Solderable electrode surfaces • Ideal for hybrids
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RC15S01G
RC15S10G
RC15S
RC15S
RC15S10G
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IN4148
Abstract: switching diode in4148 diode IN4148 IN4148 DIODE 202E
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. IN4148 SILICON EPITAXIAL PLANAR SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA FEATURES DO - 35 • Small glass structure ensures high reliability • Fast switching • Low leakage
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IN4148
150mA
250oC/10S/9
100oC)
IN4148
switching diode in4148
diode IN4148
IN4148 DIODE
202E
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PDF
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DIODE 1.0A 1000V
Abstract: A 102G 101G 103G 105G 106G 202E FR101G FR107G
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. FR101G THRU FR107G GLASS PASSIVATED FAST RECOVERY RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURES DO - 41 • Molded case feature for auto insertion • Glass passivated chip • High current capability
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FR101G
FR107G
250oC/10sec/0
UL-94
DIODE 1.0A 1000V
A 102G
101G
103G
105G
106G
202E
FR107G
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PDF
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202E
Abstract: 2CK48 2CK48A 2CK48B
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. 2CK48, 2CK48A, 2CK48B SILICON EPITAXIAL PLANAR SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA FEATURES DO - 35 • Small glass structure ensures high reliability • Fast switching
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2CK48,
2CK48A,
2CK48B
5-60-90V
150mA
250oC/10S/9
2CK48
2CK48A
100oC)
202E
2CK48
2CK48B
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PDF
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TP01A
Abstract: 202E MM4148 Shanghai Sunrise Electronics
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. MM4148 SURFACE MOUNT SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA FEATURES • Ideal for surface mount pick and place application • Small glass structure ensures high reliability
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MM4148
150mA
C/10S/9
100oC)
100KHz
100MHz
TP01A
202E
MM4148
Shanghai Sunrise Electronics
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PDF
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202E
Abstract: 2CK120
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. 2CK120 SILICON EPITAXIAL PLANAR SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA FEATURES DO - 35 • Small glass structure ensures high reliability • Fast switching • Low leakage
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2CK120
150mA
250oC/10S/9
202E
2CK120
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PDF
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diode m7
Abstract: M6 transistor surface mount M7 DO-214AC DSMA rectifier M7 m1 rectifier m7 diode M7 RECTIFIER surface mounted m6 transistor 202E
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. M1 THRU M7 SURFACE MOUNT RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURES DSMA/DO-214AC • Ideal for surface mount pick and place application • Low profile package • Built-in strain relief
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DSMA/DO-214AC
260oC/10sec/at
UL-94
100oC)
diode m7
M6 transistor surface mount
M7 DO-214AC
DSMA
rectifier M7
m1 rectifier
m7 diode
M7 RECTIFIER
surface mounted m6 transistor
202E
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PDF
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202E
Abstract: No abstract text available
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. US2A THRU US2M SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 2.0A FEATURES SMB/DO-214AA B • Ideal for surface mount pick and place application • Low profile package
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SMB/DO-214AA
260oC/10sec/at
UL-94
202E
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PDF
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202E
Abstract: D8SB10 D8SB100
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. D8SB10 THRU D8SB100 SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 8.0A FEATURES D8-SB • Glass passivated junction chip • Ideal for printed circuit board
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D8SB10
D8SB100
250oC/10sec/
UL-94
202E
D8SB100
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PDF
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diode bridge 3506
Abstract: 35a bridge GBPC35 GBPC35005 GBPC3510 GBPC35005 Thru GBPC3510
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. GBPC35005 THRU GBPC3510 SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 35A GBPC35 FEATURES GBPC35W • Glass passivated junction chip • Surge overload rating: 400 A peak
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GBPC35005
GBPC3510
GBPC35
GBPC35W
250oC/10sec/0
diode bridge 3506
35a bridge
GBPC35
GBPC3510
GBPC35005 Thru GBPC3510
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PDF
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202E
Abstract: D10SB10 D10SB100
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. D10SB10 THRU D10SB100 SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 10A FEATURES D10SB • Glass passivated junction chip • Ideal for printed circuit board
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Original
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D10SB10
D10SB100
D10SB
250oC/10sec/
UL-94
D10SB
202E
D10SB100
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PDF
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R2M diode
Abstract: Diode R2M std 202e 202E
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. R2M OVER VOLTAGE PROTACTION DIODE TECHNICAL SPECIFICATION BREAKDOWN VOLTAGE: 135-150V REVERSE SURGE CURRENT: 1A FEATURES DO - 15 • Excellent clamping capability • Low incremental surge resistance • High temperature soldering guaranteed:
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35-150V
250oC/10S/9
UL-94
100oC
15typ
R2M diode
Diode R2M
std 202e
202E
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PDF
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RC10S01
Abstract: RC10S10
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC10S01 THRU RC10S10 SILICON SILASTIC CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 10A FEATURES • Low cost • High surge capability • Solderable electrode surfaces • Ideal for hybrids MECHANICAL DATA
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RC10S01
RC10S10
150oC
RC10S
RC10S
RC10S10
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DIODE 1.0A 1000V
Abstract: 202E DF10S
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. DF005S THRU DF10S SINGLE PHASE GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURES DF-S • For surface mount application • Reliable low cost construction utilizing
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DF005S
DF10S
250oC/10sec/
UL-94
DIODE 1.0A 1000V
202E
DF10S
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PDF
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Diode 1N40
Abstract: 1N40 diode 1N40 datasheet CHARACTERISTICS DIODE 1N4007 1N4001G 1N4007G 202E Shanghai Sunrise Electronics
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. 1N4001G THRU 1N4007G GLASS PASSIVATED JUNCTION RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURES DO - 41 • Molded case feature for auto insertion • Glass passivated chip • High current capability
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1N4001G
1N4007G
250oC/10sec/0
UL-94
Diode 1N40
1N40
diode 1N40 datasheet
CHARACTERISTICS DIODE 1N4007
1N4007G
202E
Shanghai Sunrise Electronics
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PDF
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RC30S01
Abstract: RC30S10
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC30S01 THRU RC30S10 SILICON SILASTIC CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 30A FEATURES • Low cost • High surge capability • Solderable electrode surfaces • Ideal for hybrids MECHANICAL DATA
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RC30S01
RC30S10
RC30S
RC30S
RC30S10
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PDF
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A 1504
Abstract: GBPC15 GBPC15005 GBPC1510 GBPC15W
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. GBPC15005 THRU GBPC1510 SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 15A FEATURES GBPC15 GBPC15W • Glass passivated junction chip • Surge overload rating: 300 A peak
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GBPC15005
GBPC1510
GBPC15
GBPC15W
250oC/10sec/0
A 1504
GBPC15
GBPC1510
GBPC15W
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PDF
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RC10S01G
Abstract: RC10S10G
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC10S01G THRU RC10S10G SILICON GPP CELL RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 100 TO 1000V CURRENT: 10A FEATURES • Glass passivated junction chip • High surge capability • Solderable electrode surfaces Ideal for hybrids
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RC10S01G
RC10S10G
150oC
RC10S
RC10S
RC10S10G
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PDF
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p6ke68a
Abstract: P6KE200(C)A equivalent 202E P6KE10 P6KE10A P6KE440A P6KE440CA P6KE160 P6KE200 602
Text: SHANGHAI SUNRISE ELECTRONICS CO P6KE6.8 THRU P6KE440CA TECHNICAL SPECIFICATION TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W FEATURES DO-15 • 600W peak pulse power capability • Excellent clamping capability • Low incremental surge resistance
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Original
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P6KE440CA
DO-15
265oC/10S/9
UL-94
p6ke68a
P6KE200(C)A equivalent
202E
P6KE10
P6KE10A
P6KE440A
P6KE440CA
P6KE160
P6KE200 602
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PDF
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fr 399
Abstract: 202E
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. FR1A THRU FR1M SURFACE MOUNT FAST SWITCHING RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURES DSMA/DO-214AC • Ideal for surface mount pick and place application • Low profile package • Built-in strain relief
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Original
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DSMA/DO-214AC
260oC/10sec/at
UL-94
fr 399
202E
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PDF
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sb160
Abstract: 202E
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. SB120 THRU SB160 SCHOTTKY BARRIER RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 20 TO 60V CURRENT: 1.0A DO - 41 FEATURES • Epitaxial construction for chip • High current capability • Low forward voltage drop • Low power loss, high efficiency
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Original
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SB120
SB160
250oC/10sec/0
UL-94
100oC
sb160
202E
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PDF
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