Supersot 6
Abstract: Supersot6 electrical
Text: Discrete Temperature range Software version Revision date 2N3903 TO-92-3 Electrical 25°C N/A N/A FMB100 SuperSOT-6 Electrical 25°C 5.0 Apr 11, 2002 FMB5551 SuperSOT-6 Electrical 25°C 5.0 Apr 11, 2002 FMBA06 SuperSOT-6 Electrical N/A 5 Mar 13, 2002 FMBA14
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2N3903
FMB100
FMB5551
FMBA06
FMBA14
FMBA56
MMBT100
MMBT2369
MMBT2369A
MMBT3640
Supersot 6
Supersot6
electrical
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transistor Y2
Abstract: Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors FMB3946 Supersot 6 Supersot6
Text: MICDNDUCTDRtm FMB3946 C2 C1 E 1 _ _ _ _ _ Package: SuperSOT-6 Device Marking: .002 g2 - Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package
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FMB3946
100mA
100MHz
100MHz
10OuA,
fmb3946
lwpPr23
transistor Y2
Y2 TRANSISTOR
marking 002
marking Y2 transistor
transistor marking y2
marking A1 TRANSISTOR
complementary npn-pnp power transistors
Supersot 6
Supersot6
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FMMT620
Abstract: 450-170 FMMT620TA FMMT620TC PD6255 DSA003701
Text: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users
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FMMT620
INFOR43-7100
FMMT620
450-170
FMMT620TA
FMMT620TC
PD6255
DSA003701
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transistor Y4
Abstract: marking 004 Supersot 6 complementary npn-pnp marking Y4 FMB1020 150MA80
Text: FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at
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FMB1020
300mA.
100uA
100mA
150mA
200mA,
100MHz
100uA,
fmb1020
transistor Y4
marking 004
Supersot 6
complementary npn-pnp
marking Y4
150MA80
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Supersot6
Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN
Text: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5
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FDC6401N
FDC6305N
FDC637AN
FDC6303N
FDC6301N
FDC6561AN
FDC645N
FDC638P
FDC640P
FDC642P
Supersot6
Supersot 6
NDC7002N
FDC6303N
complementary
FDC655AN
fdc640p
FDC6301N
FDC6305N
FDC637AN
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VCEO80V
Abstract: FMMT620 FMMT620TA FMMT620TC
Text: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users
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FMMT620
INFORMA26100
VCEO80V
FMMT620
FMMT620TA
FMMT620TC
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supersot 6 TE
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm FMBA0656 Package: SuperSOT-6 C2 Device Marking: .003 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT- 6 Surface Mount Packsige
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FMBA0656
300mA.
supersot 6 TE
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR t m FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at
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FMB1020
300mA.
10OuA
100mA
150mA
200mA,
100MHz
10OuA,
fmb1020
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PDF
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FMBA0656
Abstract: transistor marking E2 Supersot 6 transistor marking c1
Text: FMBA0656 Package: SuperSOT-6 Device Marking: .003 C2 E1 C1 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package This device was designed for general purpose amplifier applications at collector currents to 300mA.
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FMBA0656
300mA.
fmba0656
lwpPr33
transistor marking E2
Supersot 6
transistor marking c1
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR t m FMB3946 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful
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FMB3946
100mA
100MHz
100MHz
10OuA,
fmb3946
lwpPr23
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PDF
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transistor Y4
Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004
Text: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package
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FMB1020
300mA.
100uA
100mA
150mA
200mA,
100MHz
100uA,
fmb1020
transistor Y4
complementary npn-pnp power transistors
marking A1 TRANSISTOR
marking 004
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marking Y1 transistor
Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
Text: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring
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FMB2227A
300mA.
150mA,
300mA,
150mA
300mA
100kHz
100MHz
lwpPr19
marking Y1 transistor
transistor marking y1
y1 transistor
Supersot 6
transistor y1
Supersot6
PR63
y1 npn
FMB2227A
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D marking PNP
Abstract: MARKING IC RP 6 PR63
Text: S E M IC O N D U C T O R tm FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. V E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge
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FMB2227A
300mA.
150mA
150mA,
300mA,
100kHz
100MHz
D marking PNP
MARKING IC RP 6
PR63
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marking Y1 transistor
Abstract: y1 transistor complementary npn-pnp power transistors y1 npn transistor marking y1 FMB2227A Supersot 6 transistor y1
Text: S E M IC O N D U C T O R FMB2227A ,r , C2 ei -•P C1 Package: SuperSOT-6 Device Marking: .001 i Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 w" E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge
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FMB2227A
300mA.
150mA
300mA
150mA,
300mA,
100kHz
100MHz
marking Y1 transistor
y1 transistor
complementary npn-pnp power transistors
y1 npn
transistor marking y1
FMB2227A
Supersot 6
transistor y1
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transistor Y2
Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
Text: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful
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FMB3946
100mA
100MHz
100MHz
100uA,
fmb3946
lwpPr23
transistor Y2
Y2 TRANSISTOR
Supersot6
transistor marking y2
marking 002
complementary npn-pnp
Supersot 6
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bss170
Abstract: BAT54S/SM NPN Transistor BC817-40 221 sot23 FMMD2837 FMMD2835 FMMD2836 FMMD2838 SM NPN Transistor BC817-40 F2T694B BAR99
Text: SuperSOT Series ^ A:1 HIGH CURRENT SuperSOT TRANSISTORS {PD=625mW) Pinout: 1-Collector, 2-Emitter, 3-Basa V cbo VCEO le P,o, Type V V mA mW 15 15 3000 625 VcE sat) hFE fl a tlc /V c E m A /V Max V at Iq/I b mA Typ MHz 200/- 3000 / 2 0.10 10 00 /1 0 120 1 5 0 /-
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625mW)
FMMT617
FMMT717
FMMT625
/FMMT624
FMMT619
FMMT618
FZT1053
30/FZT1051
bss170
BAT54S/SM NPN Transistor BC817-40
221 sot23
FMMD2837
FMMD2835
FMMD2836
FMMD2838
SM NPN Transistor BC817-40
F2T694B
BAR99
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Untitled
Abstract: No abstract text available
Text: The SuperSOT Series The SuperSOT series of Bipolar transistors represent the leading edge in high current capability, very low saturation voltage Bipolar technology products. This range of devices capitalises on the optimised com bination o f an enhanced M atrix geom etry, a S u p e r-p em itter process and a
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ty 617 equivalent
Abstract: B0140 MT619 FMMT619
Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSU E 3 - NOVEMBER 1995_ FEATURES * 625m W POWER DISSIPATION * * * * * lc CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed)
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
50mSl
FMMT625
ty 617 equivalent
B0140
MT619
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Untitled
Abstract: No abstract text available
Text: SuperSOT SOT23 PNP SILICON POWER SWITCHING TRANSISTORS FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 ISSUE 3 JUNE 1996_ FEATURES * 625mW POWER DISSIPATION * * lc CONT 2.SA lc Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed)
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FMMT717
FMMT718
FMMT720
FMMT722
FMMT723
625mW
FMMT717
FMMT617
FMMT618
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PDF
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FMMT617
Abstract: FMMT619 FMMT-617 FMMT618 FMMT624 FMMT625 FMMT717 V12E FMMT SYM80L
Text: SuperSOT FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 SOT23 NPN SILICON POWER TRANSISTORS SWITCHING ISSUE 3- NOVEMBER Id 1995 FEATURES ‘ 625mW POWER DISSIPATION * Ic CONT 3A * 12A Peak Pulse Current * Excellent HFE Characteristics * Extremely Low Saturation Voltage E.g. 8mV Typ.
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
625mW
FMMT617
FMMT717
vE130
100mA
FMMT-617
FMMT618
FMMT624
FMMT625
FMMT717
V12E
FMMT
SYM80L
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FMMT618
Abstract: No abstract text available
Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
625mW
FMMT617
FMMT717
FMMT718
FMMT618
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PDF
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Untitled
Abstract: No abstract text available
Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
625mW
FMMT617
FMMT717
FMMT718
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PDF
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Untitled
Abstract: No abstract text available
Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
625mW
FMMT617
FMMT717
FMMT718
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ZXT10P12DE6
Abstract: ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437
Text: ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT10P12DE6
OT23-6
OT23-6
ZXT10P12DE6
ZXT10P12DE6TA
ZXT10P12DE6TC
Marking 717
DSA0037437
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