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    SURFACE MOUNT TRANSISTOR A61 Search Results

    SURFACE MOUNT TRANSISTOR A61 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SURFACE MOUNT TRANSISTOR A61 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 5 to 600 MHz A611/ SMA611 V2 Features Product Image • LOW NOISE FIGURE: 3.2 dB TYP. • HIGH EFFICIENCY: 31 mA (TYP.) at +5 Vdc • HIGH OUTPUT POWER: +12.5 dBm (TYP.) Description The A611 RF amplifier is a discrete thin film hybrid design,


    Original     		SMA611 MIL-STD-883 PDF

    SMA611

    Abstract: A611 CA611
    Text: A611 / SMA611 Cascadable Amplifier 5 to 700 MHz Rev. V2 Features Product Image • LOW NOISE FIGURE: 3.2 dB TYP. • HIGH EFFICIENCY: 31 mA (TYP.) at +5 Vdc • HIGH OUTPUT POWER: +12.5 dBm (TYP.) Description The A611 RF amplifier is a discrete thin film hybrid design,


    Original     		SMA611 MIL-STD-883 SMA611 A611 CA611 PDF

    surface mount transistor A61

    Abstract: CA61-1
    Text: Cascadable Amplifier 2 to 6 GHz A61-1/ SMA61-1 V3 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 1-6 GHz TYP. HIGH POWER: +20 dBm (TYP.) LOW NOISE: 3.4 dB (TYP.) Description The A61-1 RF amplifier is a discrete hybrid design, which uses


    Original     		A61-1/ SMA61-1 A61-1 MIL-STD-883 A61-1 surface mount transistor A61 CA61-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 2 to 6 GHz A61/ SMA61 V3 Features Product Image • WIDE BANDWIDTH: 2-6 GHz • MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. • LOW NOISE: 3.2 dB (TYP.) Description The A61 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance


    Original     		SMA61 MIL-STD-883 SMA61 PDF

    CA61

    Abstract: SMA61 surface mount transistor A61
    Text: A61 / SMA61 Cascadable Amplifier 2 to 6 GHz Rev. V3 Features Product Image • WIDE BANDWIDTH: 2-6 GHz • MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. • LOW NOISE: 3.2 dB (TYP.) Description The A61 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance


    Original     		SMA61 MIL-STD-883 CA61 SMA61 surface mount transistor A61 PDF

    transistor c 2060

    Abstract: CA61 SMA61
    Text: A61/SMA61 2 TO 6 GHz CASCADABLE AMPLIFIER • WIDE BANDWIDTH: 2-6 GHz · MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. · LOW NOISE: 3.2 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 6/01)* Characteristics Typical Frequency Small Signal Gain (min.)


    Original     		A61/SMA61 40ithout SMA61 transistor c 2060 CA61 SMA61 PDF

    Untitled

    Abstract: No abstract text available
    Text: A611/SMA611 2000 TO 6000 MHz CASCADABLE AMPLIFIER • LOW NOISE FIGURE: 3.2 dB TYP. · HIGH EFFICIENCY: 31 mA (TYP.) at +5 Vdc · HIGH OUTPUT POWER: +12.5 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 6/01)* Characteristics Typical Frequency


    Original     		A611/SMA611 SMA611 CA611 PDF

    CA61

    Abstract: SMA61
    Text: A61/SMA61 2 TO 6 GHz CASCADABLE AMPLIFIER • WIDE BANDWIDTH: 2-6 GHz · MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. · LOW NOISE: 3.2 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/02)* Characteristics Typical Frequency Small Signal Gain (min.)


    Original     		A61/SMA61 SMA61 CA61 SMA61 PDF

    ca611

    Abstract: A611 SMA611
    Text: A611/SMA611 2000 TO 6000 MHz CASCADABLE AMPLIFIER • LOW NOISE FIGURE: 3.2 dB TYP. · HIGH EFFICIENCY: 31 mA (TYP.) at +5 Vdc · HIGH OUTPUT POWER: +12.5 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 2/03)* Characteristics Typical Frequency


    Original     		A611/SMA611 SMA611 CA611 ca611 A611 SMA611 PDF

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 PDF

    Untitled

    Abstract: No abstract text available
    Text: u u U A61 / SMA61 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 2-6 GHz MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. LOW NOISE: 3.2 dB (TYP.) Outline Drawings A61 Specifications* z ' Characteristics Typical 0°C to 50°C


    OCR Scan     		SMA61 J1-4401 PDF

    WJ-CA61

    Abstract: No abstract text available
    Text: WJ-A61 / SMA61 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 2-6 GHz MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. LOW NOISE: 3.2 dB (TYP.) Outline Drawings A61 Specifications* 0.200 (5.03) Characteristics Guaranteed


    OCR Scan     		WJ-A61 SMA61 0007CH0 WJ-CA61 PDF

    Untitled

    Abstract: No abstract text available
    Text: WJ-A61-1 /SMA61-1 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 1-6 GHz TYP. HIGH POWER: +20 dBm (TYP.) LOW NOISE: 3.4 dB (TYP.) Specifications* Outline Drawings A61-1 Guaranteed Typical Characteristics 0° to 50°C


    OCR Scan     		WJ-A61-1 /SMA61-1 A61-1 00070TB PDF

    7805 sot23

    Abstract: 2N3904 A30 surface mount transistor A40 Y5 series surface mount transistor PCI5V32BIT bc 7805 2b9 transistor PCI5V32 Y4 series surface mount transistor sb6 sot23
    Text: PMC-Sierra, Inc. APPLICATION NOTE ISSUE 3 PM7975 NIC LASAR Opitcal Network Interface Card NIC PM7375 LASAR155 TM LASAR OPTICAL NETWORK INTERFACE CARD (NIC) REFERENCE DESIGN Preliminary Information Issue 3: March 1996 PMC-Sierra, Inc. 8501 Commerce Court, Burnaby, BC Canada V5A 4N3 604 668 7300


    Original     		PM7975 PM7375 LASAR155 PMC-951042 7805 sot23 2N3904 A30 surface mount transistor A40 Y5 series surface mount transistor PCI5V32BIT bc 7805 2b9 transistor PCI5V32 Y4 series surface mount transistor sb6 sot23 PDF

    B38 SMD Transistor

    Abstract: 822273-1 ZTR32 AM79C874VC AM79C874 schematic capacitor COG xr7 pe69012 smd LM393 ZTR11 Kemet C0805C104K5RAC
    Text: 5 +3VR +3VR C27 0.01UF CC0805 4 +3VR C38 0.01UF CC0805 +3VR C29 0.01UF CC0805 C21 0.01UF CC0805 +3VR +3VR C20 0.1UF CC0805 +3VR C32 0.1UF CC0805 3 2 +3VR C37 0.1UF CC0805 1 +3VR EEDI/LED0# LED2#/SRDCLK C14 0.1UF CC0805 EEDI/LED0# LED2#/SRDCLK R1 1.5K CR0805


    Original     		CC0805 CR0805 B38 SMD Transistor 822273-1 ZTR32 AM79C874VC AM79C874 schematic capacitor COG xr7 pe69012 smd LM393 ZTR11 Kemet C0805C104K5RAC PDF

    MAAM-008863

    Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
    Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America


    Original     		40W267 MAAM-008863 MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer PDF

    AH 503 hall sensor

    Abstract: schematic diagram power supply str f6654 schematic diagram power supply str f6656 of AH 503 hall sensor str f6654 STR-F6654 STR-F6656 TRANSISTOR J 5804 STR-S5707 STR-S6708 schematic diagram
    Text: A Sanken Company www.allegromicro.com Allegro MicroSystems, Inc. specializes in the design and manufacture of advanced mixed-signal analog + digital integrated circuits. Allegro, an American-managed, wholly-owned subsidiary of Sanken Electric Co., Ltd., combines 30+ years of


    Original     		AMS-127B AH 503 hall sensor schematic diagram power supply str f6654 schematic diagram power supply str f6656 of AH 503 hall sensor str f6654 STR-F6654 STR-F6656 TRANSISTOR J 5804 STR-S5707 STR-S6708 schematic diagram PDF

    PH1819-60

    Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
    Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies


    Original     		PDF

    spf 9001 sanken

    Abstract: SANKEN power supply sanken transistor Shortform Transistor Guide militar capacitors strs6709 sanken power transistor 2SA1216 semiconductors cross reference power supply SAMSUNG MONITOR str str 6707 diagram guide
    Text: A Sanken Company www.allegromicro.com Allegro MicroSystems, Inc. specializes in the design and manufacture of advanced mixed-signal analog + digital integrated circuits. Allegro, an American-managed, wholly-owned subsidiary of Sanken Electric Co., Ltd., combines 30+ years of


    Original     		AMS-127B spf 9001 sanken SANKEN power supply sanken transistor Shortform Transistor Guide militar capacitors strs6709 sanken power transistor 2SA1216 semiconductors cross reference power supply SAMSUNG MONITOR str str 6707 diagram guide PDF

    smr-3822

    Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
    Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM


    Original     		Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter PDF

    M38UC

    Abstract: Stellex M38UC SM4T mixer M38UC-150 a56 transistor 952 STELLEX SFD25 M38DC-400 transistor MY51 transistor MY52 M38UC-400
    Text: M/A-COM, Inc. 1011 Pawtucket Blvd. Lowell, MA 01853-3295 RF and Microwave Products North America MSBU Component Operations Tel: 800.366.2266 Fax: 800.618.8883 Europe/Africa/Middle East Tel: 44.1344.869.595 Fax: 44.1344.300.020 Asia/Pacific Tel: 81.44.844.8296


    Original     		MA-C-05010007 M38UC Stellex M38UC SM4T mixer M38UC-150 a56 transistor 952 STELLEX SFD25 M38DC-400 transistor MY51 transistor MY52 M38UC-400 PDF

    MP 7721

    Abstract: IEC6068-2-58 IPC 7351/7355 IPC-7351 to252 IPC 7355 JESD22-A111 JEDEC-J-STD-20 JESD22B-102 MICA WAFER J-STD-033
    Text: Additional Information, DS1, March 2008 Recommendations for Assembly of Infineon TO Packages Edition 2008-03 Published by Infineon Technologies AG 81726 München, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		IPC/EIA/JEDEC-J-STD-001 J-STD-033/-020 JESD22-B102 MP 7721 IEC6068-2-58 IPC 7351/7355 IPC-7351 to252 IPC 7355 JESD22-A111 JEDEC-J-STD-20 JESD22B-102 MICA WAFER J-STD-033 PDF

    how to test scr

    Abstract: No abstract text available
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They


    Original     		LMV712 200pF how to test scr PDF

    LMV711

    Abstract: LMV712 LMV712LD LMV712LDX LMV712MM LMV712MMX amplifier A62 marking
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They


    Original     		LMV712 LMV712 200pF LMV711 LMV712LD LMV712LDX LMV712MM LMV712MMX amplifier A62 marking PDF