SURFACE MOUNT TRANSISTOR AG QR Search Results

SURFACE MOUNT TRANSISTOR AG QR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

SURFACE MOUNT TRANSISTOR AG QR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
5n06v Abstract: 5n06 TMOS E-FET AG3B CASE369A Text: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER	Original	5N06V/curves 5n06v 5n06 TMOS E-FET AG3B CASE369A	PDF
Transistor b865 Abstract: TAMP-72LN Box 34C MCL TAMP-72LN 3x62 Text: Low Noise Ampliﬁer TAMP-72LN+ 7TO- Z The Big Deal: s (IGH 0 D"MTYP s ,OW.OISE&IGURE D"TYP s )NTEGRATED"IAS-ATCHINGAND 3TABILITY#IRCUITS 0RICING$11.95 (QTY 5-49) Product Overview: 4HE4!-0 ,. 2O(3COMPLIANT UTILIZESADVANCED% 0(%-4TECHNOLOGYINASINGLESTAGELOWNOISE	Original	TAMP-72LN+ Transistor b865 TAMP-72LN Box 34C MCL TAMP-72LN 3x62	PDF
the t.amp 1400 Abstract: the t.amp 1500 iso 1460 TAMP-1521GLN PL-293 TB-468 Text: Low Noise Ampliﬁer TAMP-1521GLN+ 7TO- Z The Big Deal: s 5LTRA,OW.OISE&IGURE D"TYP s (IGH 0 D"MTYP s (IGH'AIN D"TYP s )NTEGRATED"IAS-ATCHINGAND 3TABILITY#IRCUITS 0RICING$14.95 (QTY 5-49) Product Overview:	Original	TAMP-1521GLN+ the t.amp 1400 the t.amp 1500 iso 1460 TAMP-1521GLN PL-293 TB-468	PDF
DC04 display Abstract: how to test POWER MOSFET with digital multimeter tektronix 576 curve tracer VISHAY VT 300 WEIGHT INDICATOR TSMC 0.35Um FLUKE 79 manual THERMAL ELECTRIC COOLER hp 4274A 532 nm laser diode PHOTO TRANSISTOR ppt Text: Quality And Reliability Report 2005 DC04-0001 Page 1 of 79	Original	DC04-0001 DC04 display how to test POWER MOSFET with digital multimeter tektronix 576 curve tracer VISHAY VT 300 WEIGHT INDICATOR TSMC 0.35Um FLUKE 79 manual THERMAL ELECTRIC COOLER hp 4274A 532 nm laser diode PHOTO TRANSISTOR ppt	PDF
GP 836 DIODE Abstract: No abstract text available Text: Q P PA-6232 Surface Mount Cascadable Amplifier 2000 to 6000 MHz avantek FEATURES APPLICATIONS • Frequency Range: 2000 to 6000 MHz • High Dynamic Range • Noise Figure: 4.3 dB Typ • Surface Mount Package • Wideband Receiver Gain Block • IF Gain Block	OCR Scan	PA-6232 PP-38, GP 836 DIODE	PDF
4963 MOSFET Abstract: 6N diode Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTV6N100E TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1-5 OHM N-Channel Enhancement-Mode Silicon Gate The D3PAK package has the capability of housing the largest chip	OCR Scan	0E-05 0E-04 0E-02 0E-01 4963 MOSFET 6N diode	PDF
LT 8224 diode Abstract: DIODE LT 6202 LT 8224 LT 8224 TRANSISTOR Text: AVANTEK INC MME ]> n m % t 0007=100 4 BIAVA PPA-4132 •• Surface Mount Cascadable Amplifier 1000 to 4000 MHz ^ ^ ' " F '? 4 - 3 'O l A V A N T E K FEATURES APPLICATIONS • Frequency Range: 1000 to 4000 MHz • High Dynamic Range • Noise Figure: 4.5 dB (Typ	OCR Scan	PPA-4132 PP-38, PPA-4132 Inp61 SS035 LT 8224 diode DIODE LT 6202 LT 8224 LT 8224 TRANSISTOR	PDF
25N50E Abstract: 501 mosfet transistor mount chip transistor 332 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M TV25N 50E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 25 AMPERES 500 VOLTS RDS on = °-200 OHM N-Channel Enhancement-Mode Silicon Gate The D3pAK package has the capability of housing the largest chip	OCR Scan		PDF
transistor z3m Abstract: Z3M IC z3m Transistor Z3M Y Text: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET High Density Pow er FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM	OCR Scan	MTB75N03HDL/D 2PHX43416-0 transistor z3m Z3M IC z3m Transistor Z3M Y	PDF
supper mosfets Abstract: k 351 transistor Text: MOTOROLA Order this document by MTD20N03HDUD SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD20N03HDL HDTMOS E-FET™ High Density Pow er FET DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand	OCR Scan	MTD20N03HDUD 2PHX43416 MTD20N03HDL/D supper mosfets k 351 transistor	PDF
tb7104 Abstract: No abstract text available Text: MOTOROLA Order this document by MTB71040L/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET High Energy Pow er FET D2PAK for S u rface Mount TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0-022 Q N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die	OCR Scan	MTB71040L/D tb7104	PDF
Untitled Abstract: No abstract text available Text: W J -A 9 /S M A 9 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22 dBm TYP. HIGH THIRD ORDER I.P.: +35 dBm (TYP.) WIDE POWER SUPPLY RANGE: +15 T O +24 VOLTS Outline Drawings A9 Specifications* 0450 n	OCR Scan		PDF
surface mount transistor ag qr Abstract: amps ciss hen vd Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD4N20E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 200 VOLTS n DS on = 12 OHM N-Channel Enhancement-Mode Silicon Gate	OCR Scan	MTD4N20E 0E-04 0E-03 0E-02 0E-01 surface mount transistor ag qr amps ciss hen vd	PDF
MTD1N80E Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD1N80E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount Motorola Preferrod Device TM OS POWER FET 1.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate T h is high vo lta g e M O S F E T uses an a d vanced te rm inatio n	OCR Scan	hereTD1N80E MTD1N80E	PDF

TH 2190 Transistor Abstract: 30p06v 30P06 P06V TH 2190 mosfet transistor 4413 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet M T B 3 0 P 06 V TM O S V™ P o w er Field E ffe c t T ran sisto r D 2PAK for S u rfa c e M ount M o to ro la P r e fe r re d D e v ic e TMOS POWER FET 30 AMPERES 60 VOLTS P-Channel Enhancement-Mode Silicon Gate	OCR Scan	commuta14 0E-05 1OE-04 0E-02 TH 2190 Transistor 30p06v 30P06 P06V TH 2190 mosfet transistor 4413	PDF
bergquist ge Abstract: transistor dk qq Text: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products HDTMOS Single N -C hannel Field E ffect Transistor SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m il W aveFET™ de vice s are an ad van ced series of po w e r M O SFETs w hich utilize M o to ro la ’s	OCR Scan	MMSF3300/D MMSF3300 bergquist ge transistor dk qq	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M TD1N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N50E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 500 VOLTS N-Channel Enhancement-Mode Silicon Gate	OCR Scan	TD1N50E/D TD1N50E MTD1N50E/D	PDF
33N10E Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M TB33N10E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTB33N10E TMOS E-FET ™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate	OCR Scan	TB33N10E/D MTB33N10E/D 33N10E	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TV32N 25E TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r D3PAK for S u rfa c e M ount TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate The D3pAK package has Ihe capability of housing the largest chip	OCR Scan	0E-05	PDF
Untitled Abstract: No abstract text available Text: APR 2 2 »9 3 rz 7 S G S -T H O M S O N « œ i[L iM R l g S L3035 SUBSCRIBER LINE INTERFACE CIRCUIT ADVANCE DATA • M O NOCHIP SILICON SLIC O PTIM IZED FOR US APPLICATIO NS COX / DLC / PABX ■ IM PLEM ENTS ALL KEY FEATURES OF THE BO RSCHT FUNCTION ■ 63dB TYPICAL LONG ITUDINAL BALANCE	OCR Scan	L3035 L3035	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M TB55N10EL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB55N10EL TMOS E-FET High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 55 AMPERES 100 VOLTS RDS on = 0.026 Q N-Channel Enhancement-Mode Silicon Gate	OCR Scan	TB55N10EL/D MTB55N10EL/D	PDF
Brain Box Mini 88 plus manual Abstract: MILITARY QUALIFIED DIP SWITCHES 95B04RA pico fuses color coding 3x4 keypad grayhill 71BD36-3119 grayhll DYNAMICS RESEARCH CORP. ENCODERS KSH 200 TRANSISTOR Cross reference 78M02S Text: N um ber 1 A n ISO -9001 C om pany Product Catalog M o n tre a l • O ttaw a • Toronto • W innipeg • Calgary • Vancouver Lannie Reynolds Account Manager -W.T.I. Manufacturers Representatives li. 7370 Bramalea Road, Unit 6617, Mississauga, Ontario L5S1N6	OCR Scan	PARADYM-31 Brain Box Mini 88 plus manual MILITARY QUALIFIED DIP SWITCHES 95B04RA pico fuses color coding 3x4 keypad grayhill 71BD36-3119 grayhll DYNAMICS RESEARCH CORP. ENCODERS KSH 200 TRANSISTOR Cross reference 78M02S	PDF
d4n01 Abstract: D4N0 mdf4n MAN TGS Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F4N 01H D Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors M otorola Preferred Device M iniM O S'“ devices are an advanced series of power MOSFETs which utilize M o to ro la ’s High Cell D ensity HDTMOS process.	OCR Scan	DF4N01HD d4n01 D4N0 mdf4n MAN TGS	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M TD6N20E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD6N20E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 200 VOLTS N-Channel Enhancement-Mode Silicon Gate	OCR Scan	TD6N20E/D TD6N20E MTD6N20E/D	PDF

SURFACE MOUNT TRANSISTOR AG QR Search Results

SURFACE MOUNT TRANSISTOR AG QR Result Highlights (5)

SURFACE MOUNT TRANSISTOR AG QR Datasheets Context Search

5n06v

Transistor b865

the t.amp 1400

DC04 display

GP 836 DIODE

4963 MOSFET

LT 8224 diode

25N50E

transistor z3m

supper mosfets

tb7104

Untitled

surface mount transistor ag qr

MTD1N80E

TH 2190 Transistor

bergquist ge

Untitled

33N10E

Untitled

Untitled

Untitled

Brain Box Mini 88 plus manual

d4n01

Untitled