Untitled
Abstract: No abstract text available
Text: BAT18. Silicon RF Switching Diode • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance • Pb-free RoHS compliant package BAT18-04 BAT18-05 ! , ! , , , Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series
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BAT18.
BAT18-04
BAT18-05
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BAT18
Abstract: ASs infineon
Text: BAT18. Silicon RF Switching Diode • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance • Pb-free RoHS compliant package BAT18-04 BAT18-05 ! , ! , , , Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series
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BAT18.
BAT18-04
BAT18-05
BAT18-04
BAT18-04,
BAT18
ASs infineon
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NTE583
Abstract: No abstract text available
Text: NTE583 Silicon Rectifier Diode Schottky, RF Switch Description: The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn–on voltage and ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse application with broad dynamic range.
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NTE583
NTE583
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bat18 diode
Abstract: BAT18 marking AUs BAT18-05 AUS SOT23 BAT18-04 BCW66 ASS infineon
Text: BAT18. Silicon RF Switching Diode • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT18-04 BAT18-05 ! , ! , , , Type BAT18-04 BAT18-05 Package
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BAT18.
BAT18-04
BAT18-05
bat18 diode
BAT18
marking AUs
BAT18-05
AUS SOT23
BAT18-04
BCW66
ASS infineon
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hp11612a
Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑
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5091-4932E
5966-0780E
order50
hp11612a
anzac power divider
HP8565A
HP83595A
HP8565
HP436A
HP8640B
Microwave PIN diode
pin diode microstrip
0805Z473
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A940
Abstract: a940 Transistor transistor a940 DIODE BAT Q62702-A940 BAT18 A938 A942 Q62702-A787 Q62702-A938
Text: BAT 18 Silicon RF Switching Diode BAT 18 … ● Low-loss VHF/UHF switch above 10 MHz ● Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 BAT 18-04 AU Q62702-A938 BAT 18-05 AS Q62702-A940
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Q62702-A787
Q62702-A938
Q62702-A940
Q62702-A942
A940
a940 Transistor
transistor a940
DIODE BAT
Q62702-A940
BAT18
A938
A942
Q62702-A787
Q62702-A938
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BAT18
Abstract: No abstract text available
Text: BAT18. Silicon RF Switching Diode • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance BAT18-04 BAT18-05 ! ! , , , , Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode Maximum Ratings at TA = 25°C, unless otherwise specified
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BAT18.
BAT18-04
BAT18-05
BAT18-04
BAT18-04,
BAT18
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HP8640B
Abstract: HP83595A HSMP-3880 HP11612A HP436A HSMP-3820 HSMP-3830 HSMP-3890 HP8565
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current controlled
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5091-4932E
5966-0780E
HP8640B
HP83595A
HSMP-3880
HP11612A
HP436A
HSMP-3820
HSMP-3830
HSMP-3890
HP8565
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hp11612a
Abstract: HP8640B HP8565A HP436A HP83595A HSMP-3820 Microwave PIN diode HSMP-3830 HSMP-3880 HSMP-3890
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current controlled
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bat18 a2
Abstract: top marking c2 sot23 BAT18 BAT18-05 A2 SOT23 AUS SOT23 c2 sot23 BAT18-04 top marking 3c sot23 BAT18-04 sot23
Text: BAT18.BAT18-05 Silicon RF Switching Diode 3 Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s
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BAT18.
BAT18-05
BAT18
BAT18-04
EHA07005
EHA07002
VPS05161
EHA07004
bat18 a2
top marking c2 sot23
BAT18
BAT18-05
A2 SOT23
AUS SOT23
c2 sot23
BAT18-04
top marking 3c sot23
BAT18-04 sot23
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BAT18
Abstract: ASS infineon
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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BAT18.
BAT18-04
BAT18-05
BAT18-04
BAT18-04,
BAT18
ASS infineon
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BAT18
Abstract: ASS infineon
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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BAT18.
BAT18-04
BAT18-05
BAT18-04
BAT18-04,
BAT18
ASS infineon
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BAT18
Abstract: BAT18-05 BAT18-04
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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BAT18.
BAT18-04
BAT18-05
BAT18-04,
Jan-07-2003
100MHz
BAT18
BAT18-05
BAT18-04
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VPS05604
Abstract: DIODE A3 C4 marking diode A4 marking diode diode marking a4 A4 SOT363 switch marking A3 A3 DIODE diode MARKING A3 marking 5a3
Text: BAT 18-04S Silicon PIN Diode Preliminary data 4 5 Low-loss VHF / UHF switch above 10 MHz 6 PIN diode with low forward resistance 2 3 1 C1/A2 C3 A4 6 5 4 D2 D1 VPS05604 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 Type Marking BAT 18-04S AVs Pin Configuration Package
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18-04S
VPS05604
EHA07464
OT-363
100MHz
EHD07019
EHD07020
Dec-16-1999
VPS05604
DIODE A3
C4 marking diode
A4 marking diode
diode marking a4
A4 SOT363
switch marking A3
A3 DIODE
diode MARKING A3
marking 5a3
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon RF Switching Diode BAT 18 . • Low-loss VHF/UHF switch above 10 MHz • Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 °- ^ ^ 1-ÍHA07002 BAT 18-04
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Q62702-A787
HA07002
Q62702-A938
EHA0700S
Q62702-A940
Q62702-A942
EKA07004
EHA070M
235b05
G12034Ã
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diode varactor mv201
Abstract: construction of varactor diode diode varactor mitsubishi MV201 3lu2 varactor diode parameter UJ103 D0154D5 "Varactor Diode" 50MHZ
Text: MITSUBISHI DISCRETE SC blE D • b E ^ H Û ^ 0015404 ITA « H I T S ANTENNA SWITCH MV 2 0 1 VARACTOR DIODE DESCRIPTION OUTLINE DRAWING The MV201 varactor diode is employing a high reliability glass, construction designed fo r AFC in VHF UHF. Dimension mm
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MV201
MV201
diode varactor mv201
construction of varactor diode
diode varactor mitsubishi
3lu2
varactor diode parameter
UJ103
D0154D5
"Varactor Diode"
50MHZ
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EHA07005
Abstract: EHA07002
Text: SIEM ENS Silicon RF Switching Diode BAT 18. • Low-loss VHF/UHF switch above 10 MHz • Pin diode with low forward resistance Type Marking Ordering Code BAT 18 A2 Q62702-A787 Pin Configuration Package1 SOT 23 0- EH1-» EHA07002 BAT 18-04 AU Q62702-A938
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Q62702-A787
EHA07002
Q62702-A938
Q62702-A940
EHA07005
Q62702-A942
CHA07004
EHA0700Í
EHA07005
EHA07002
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MI204
Abstract: No abstract text available
Text: b E M T fiS 1} GD1 7 7 2 7 222 • ANTENNA SWITCH MI204 PIN DIODE DESCRIPTION OUTLINE DRAWING The M I204 PIN diode is employing a high reliability glass construction designed for RF small signal attenuator in V H F UHF. FEATURES ] ii • Long carrier lifetime
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MI204
MI204
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1SS103
Abstract: No abstract text available
Text: NEC SILICON SWITCHING DIODE ELECTRON DEVICE I S S I 03 UHF/VHF Electronic Tuner & VHF Low, High Ch. Switch SILICON EPITAXIAL PLANAR DIODE FEATURES PACKAGE DIMENSIONS • Low series resistance rs. ¡n millimeters inches • Low leakage current. IR S 5 0 n A at V r = 3 0 V
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100MHz
1SS103
1SS103
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Untitled
Abstract: No abstract text available
Text: HSK110-Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch Features Outline • Low forward resistance, rf = 0.9Q max • LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information
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HSK110---------------------------Silicon
HSK110
HSK110
100MHz
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1SS277
Abstract: C 461
Text: 1SS277-Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch Features Outline • Low forward resistance, rf = 0.5Q max • Ultra small glass package (UMD) enables easy mounting and high reliability. = 2nd band Cathode band
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1SS277---------------------------Silicon
1SS277
1SS277
C 461
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Untitled
Abstract: No abstract text available
Text: HSC277-Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch Features Outline • Low forward resistance. rp0.7£l max • Ultra small Elat package (UFP) is suitable for surface mount design. Cathode mark c| Ordering Information
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HSC277-------------------------Silicon
HSC277
HSC277
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HSK277
Abstract: No abstract text available
Text: HSK277-Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch Features Outline • Low forward resisiance. rf = 0.5Q max Cathode band • LLD package is suitable for high density surface mounting and high speed assembly. 12nd. band
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HSK277---------------------------Silicon
HSK277
HSK277
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Untitled
Abstract: No abstract text available
Text: HSU277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch HITACHI Features • Low forward resistance. rf = 0.7i2max • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code
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HSU277
ADE-208-018G
100MHz
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